• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.126-126
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• 2003

유기트랜지스터에 관한 연구는 1980년 이후부터 시작되었으나 근래에 들어 전 세계적으로 본격적인 연구가 진행되고 있다. 제작공정이 간단하고 비용이 저렴하며 충격에 의해 깨지지 않고 구부리거나 접을 수 있는 전자 회로 기판이 미래의 산업에 필수적인 요소가 될 것으로 예상되고 있으며 이러한 요구를 충족시킬 수 있는 유기트랜지스터의 개발은 아주 중요한 연구분야로 대두되고 있다. 본 연구에서는 표면처리에 따른 contact angle, I-V 특성곡선, 표면 morphology 등의 결과로부터 dry cleaning 한 것이 wet cleaning한 것보다 왜 좋은지를 논하고자 한다. 먼저 N-type SiO$_2$ 기판을 이용하여 back면의 oxide층을 제거한 후, back gate용으로 사용하기 위하여 sputtering장치로 Au/Cr을 증차하였다. 그리고 기판에 앞면을 photolithography 공정을 이용하여 Au/Cr를 1000$\AA$ 증착 하여 source-, drain-eldctrode를 제조하였다. 그리고 SiO$_2$ 기판의 표면처리를 달리하여 그 위에 유기박막을 증착하여 특성을 비교하였다.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.36-42
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• 2003

The oxidation behaviors of Y-Cr bilayer deposited on ferritic steel by magnetron-sputtering for application of the Fe-Cr alloys as interconnectors of planar-type solid oxide fuel cells (SOFCs) were studied. After oxidation at $800^{\circ}C$ for 40 hours, the major phase of $Y_2$$O_3$and the minor phase of $YCrO_3$, $Mn_{1.5}$ $Cr_{1.5}$ $O_4$and Cr$_2$SiO$_4$were formed in the Y/Cr bilayered samples, while the major phase of Cr$_2$O$_3$and the minor phase of $Y_2$$O_3$were formed as the major phase in the Cr/Y bilayered samples. The Log(ASR/T) that expresses electric resistance of the Y/Cr coated specimen with nonconducting $_Y2$$O_3$oxide showed high value of -2.80 Ω$\textrm{cm}^2$$K^{-1}$ / and that of the Cr/Y coated specimen with conducting $Cr_2$$O_3$oxide appeared to be -4.11 Ω$\textrm{cm}^2$$^{K}$ . The electric resistance of the Y/Cr coated specimen was largely increased due to the formation of high resistance oxide scales. However, the Cr/Y coated specimen did not show any increase in the electric resistance and had the long-term stability of oxidation because there was no formation of the secondary phases with low conductivity.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.407-413
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• 2002

Eutectic high chromium cast irons containing 17%Cr and 26%Cr were produced for this research by making each of them solidify unidirectionally. Abrasion wear test against SiC or $Al_2$O$_3$bonded paper was carried out using test pieces cut cross-sectionally at several distances from the chill face of castings. The wear resistance was evaluated in connection with the parameters such as eutectic colony size($E_w$), area fraction of boundary region of the colony($S_B$) where comparatively large massive chromium carbides are crystallized and, average diameter of chromium carbides in the boundary region($D_c$). The wear rate($R_w$), which is a gradient of straight line of wear loss versus testing time, was influenced by the type and the particle size of the abrasives. The $R_w$ value against SiC was found to be larger than that against A1$_2$O$_3$under the similar abrasive particle size. In the case of SiC, the $R_w$ value increased with an increase in the particle size. The $R_w$ value also increased as the eutectic colony size decreased, and that of the 17%Cr iron was larger than that of the 26%Cr iron at the same $E_w$ value. Both of the $S_B$ and $D_c$ values were closely related to the $R_w$ value regardless of chromium content of the specimens. The $R_w$ values of the annealed specimens were greater than those of the as-cast specimens because of softened matrix structures. As for the relationship between wear rate and macro-hardness of the specimens, the hardness resulting in the minimum wear rate was found to be at 550 HV30.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.913-917
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• 2003

In the electronic components and devices fabrication, thin film resistors with low TCR(temperature coefficient of resistance) and high precision have been used over 3 GHz microwave in recent years. Ni-Cr alloys thin films resistors is one of the most commonly used resistive materials because it has low TCR and highly stable resistance. In this work, we fabricated thin film resistors using Evanohm alloys target(72Ni-20Cr-3Al-4Mn-Si) of s-type with excellent resistors properties by RF-sputtering. Also we reported best deposited conditions of thin film resistors for microwave to observe microstructure and electronic properties of thin film according to deposited conditions(between target and substrate, power supply)

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.5
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• pp.50-55
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• 1983

A comprehensive study of the electrical properties of low-dose Si implants in Cr-doped GaAs substrates has been made using the Hall-effect/sheet-resistivity measurement technique for various ion doses and annealing temperatures. The samples were implanted at room temperature and annealed with silicon nitride encapsulants in a hydrogen atmosphere for 15 minutes. H-type layers were produced at all dose levels investigated, and the optimum annealing temperature was 850$^{\circ}C$ for all doses. The highest electrical activation efficiency was 89% for Cr-doped GaAs substrates. Depth profiles of carrier concentrations and mo-bilities are highly dependent upon ion dose and annealing temperature. Significant im-plantation damage still remains after an 800$^{\circ}C$ anneal, and a 900$^{\circ}C$ anneal produces signi-ficant outdiffusion as well as indiffusion of the implanted Si ions.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.220-226
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• 1997

An optical intensity-type pressure sensor has been fabricated by coupling multimode optical fiber with 100 nm-Au/30 nm-NiCr/150 nm-$Si_3N_4/300 nm-SiO_2/150 nm-Si_3N_4$ optical reflection layer supported by micromachined frame-shape silicon substrate, and its characteristics was investigated. For the application of $Si_3N_4/SiO_2/Si_3N_4$ diaphragm to the optical reflection layer of the sensor, NiCr and Au films were deposited on the backside of the diaphragm by thermal evaporation , respectively, and thus optical low caused by transmission in the reflection layer could be decreased to a few percents. Dielectric diaphragms with uniform thickness were able to be also reproduced because top- and bottom-$Si_3N_4$ layer of the diaphragm could automatically stop silicon anisotropic etching. The respective pressure ranges in which the sensor showed linear optical output power-pressure characteristics were 0~126.64 kPa, 0~79. 98 kPa, and 0~46.66 kPa, and the respective pressure sensitivities of the sensor were about 20.69 nW/kPa, 26.70 nW/kPa, and 39.33 nW/kPa, for the diaphragm sizes of 3$\times$3 $\textrm{mm}^2$, 4$\times$4 $\textrm{mm}^2$, and 5$\times$5 $\textrm{mm}^2$, indicating that the sensitivity increases as diaphragm size increases.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.92-94
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• 2004

In this investigation, 3C-SiC film deposited $1000{\AA}$ on the p-type silicon wafer which is resistance $0{\sim}30[{\Omega}{\cdot}cm]$ by PECVD (Plasma-enhanced Chemical Vapor Deposition). We deposited Cr, Ta, Pt in front of wafer to utilize DC-sputter for $500{\AA}$, the SiC Schottky diode made from Al ohmic contact about $4000{\AA}$, and to each different temperature which annealing in Ar atmosphere, we had forward characteristic analysis along to annealing temperature.

• Clean Technology
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• v.19 no.1
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• pp.44-50
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• 2013

Tin-based materials for lithium ion battery have been proposed as new anode candidates owing to their higher specific capacity and relatively high lithium insertion potential. Tin-based materials have been extensively studied as possible replacements for carbon anodes in lithium ion batteries. However, the large volume expansion results in severe particle cracking with loss of electrical contact, giving irreversible capacity losses which prevent the widespread use of tin-based materials in lithium batteries. So remaining studies of tin-based materials are alleviating volume expansion and improving cycle performance. In this work, $SnO_2-SiO_2$ composites were manufactured with sol-gel method to overcome their volume expansion. Carbon was coated with 10 vol% propylene gas. The characteristics of active material and the effect of heat treatment were investigated with TG/DTA, XRD, SEM and FT-IR. Electrochemical characteristics of these composites were measured with CR2032 type coin cells. Carbon coated $SnO_2-SiO_2$at $300^{\circ}C$ heat treatment showed the best electrochemical performance.

• Journal of the Korean Ceramic Society
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• v.38 no.2
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• pp.143-151
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• 2001

Ca/LiCl-KCl/CaCrO$_4$열 전지계의 양극재료로서 BCT(Body-Centered Tetragonal) 결정구조를 갖는 CaCrO$_4$분말을 GNP로 합성하고, SEM, TEM, XRD를 이용하여 그 미세구조를 분석하였다. GNP 공정에 의한 CaCrO$_4$분말은 단일상으로 0.5$mu extrm{m}$ 이하의 입자 크기를 가지며 균일하게 분포한 반면, 기존의 분말 혼합법은 높은 하수 온도 및 장시간의 하소 조건을 필요하므로 미세한 분말 합성이 어렵고 pellet 형태로 만들었을 때 GNP 분말에 비해 비표면적이 현저하게 작기 때문에 전극 재료로써 유리하지 못하다. Ca/LiCl-KCl/CaCrO$_4$계의 전기 화학적인 특성을 평가해본 결과 전지셀을 Ca/DEB(LiCl-KCl+CaCrO$_4$+SiO$_2$)와 같은 DEB 형태로 만들었을 때 $600^{\circ}C$의 온도에서 2.0 V이상 (<100 mA/㎤)의 안정한 전압이 5분 이상 유지되었다. 그러나 3층 전극 셀(Ca/LiCl/KCl/ CaCrO$_4$)에서는 동일한 온도에서 2.0 V이상 (<100 mA/㎤)의 전압이 7분 이상 유지되었으나 불안정한 전압 변동 및 낮은 peak voltage로 인해 DEB 셀의 전지 특성이 더 우수한 것으로 생각된다. 양극 재료의 제조 방법의 관점에서 볼 때, 동일한 DEB(Depolarizer : Electrolyte : Binder=25 : 70 : 5 wt%) 조성의 셀 구성시, GNP 분말은 분말 혼합법에 의한 분말보다 반응 표면적이 훨씬 크기 때문에 GNP 양극 활 물질의 DEB 셀에서의 전지 수명이 더 길었다.

• Korean Journal of Mineralogy and Petrology
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• v.34 no.1
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• pp.1-14
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• 2021

The Unsang gold deposit has been one of the three largest deposits (Daeyudong, Kwangyang) in Korea. The geology of this deposit consists of series of host rocks including Precambrian metasedimentary rock and Jurassic Porphyritic granite. The deposit consists of Au-bearing quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock and Jurassic Porphyritic granite, which suggests that it is an orogenic-type deposit. Quartz veins are classified as 1) galena-quartz vein type, 2) pyrrhotite-quartz vein type, 3) pyrite-quartz vein type, 4) pegmatic quartz vein type, 5) muscovite-quartz vein type and 6) simple quartz vein type based on mineral assembles. The studied quartz vein is pyrite-quartz vein type which occurs as sericitization, chloritization and silicification. The white mica from stylolitic seams of laminated quartz vein occurs as fine or medium aggregate associated with white quartz, pyrite, chlorite, rutile, monazite, apatite, K-feldspar, zircon and calcite. The structural formular of white mica from laminated quartz vein is (K0.98-0.86Na0.02-0.00Ca0.01-0.00Ba0.01-0.00 Sr0.00)1.00-0.88(Al1.70-1.57Mg0.22-0.09Fe0.23-0.10Mn0.00Ti0.04-0.02Cr0.01-0.00V0.00Ni0.00)2.06-1.95 (Si3.38-3.17Al0.83-0.62)4.00O10(OH2.00-1.91F0.09-0.00)2.00. It indicated that white mica of laminated quartz vein has less K, Na and Ca, and more Si than theoretical dioctahedral micas. Compositional variations in white mica from laminated quartz vein are caused by phengitic or Tschermark substitution [(Al3+)VI+(Al3+)IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV] and direct (Fe3+)VI <-> (Al3+)VI substitution. The structural formular of chlorite from laminated quartz vein is((Mg1.11-0.80Fe3.69-3.14Mn0.01-0.00Zn0.01-0.00K0.07-0.01Na0.01-0.00Ca0.04-0.01Al1.66-1.09)5.75-5.69 (Si3.49-2.96Al1.04-0.51)4.00O10 (OH)8. It indicated that chlorite of laminated quartz vein has more Si than theoretical chlorite. Compositional variations in chlorite from laminated quartz vein are caused by phengitic or Tschermark substitution (Al3+,VI+Al3+,IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV) and octahedral Fe2+ <-> Mg2+ (Mn2+) substitution. Therefore, laminated quartz vein and alteration minerals of the Unsan Au deposit was formed during ductile shear stage of orogeny.