• 제목/요약/키워드: Cr layer

검색결과 807건 처리시간 0.02초

하지층기판온도에 따른 CoCrTa/Si 이층박막의 특성변화 (Characteristics variation of CoCrTa/Si double layer thin film on variation of underlayer substrate temperature)

  • 박원효;김용진;금민종;가출현;손인환;최형욱;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.77-80
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    • 2001
  • Crystallographic and magnetic characteristics of CoCr-based magnetic thin film for perpendicular magnetic recording media were influenced on preparing conditions. In these, there is that substrate temperature was parameter that increases perpendicular coercivity of CoCrTa magnetic layer using recording layer. While preparation of CoCr-based doublelayer, by optimizing substrate temperature, we expect to increase perpendicular anisotropy of CoCr magnetic layer and prepare ferromagnetic recording layer with a good quality by epitaxial growth. CoCrTa/Si doublelayer showed a good dispersion angle of c-axis orientation $\Delta$$\theta$$_{50}$ caused by inserting amorphous Si underlayer which prepared at underlayer substrate temperature 250C. Perpendicular coercivity was constant, in-plane coercivity was controlled a low value about 2000e. This result implied that Si underlayer could restrain growth of initial layer of CoCrTa thin film, which showed bad magnetic properties effectively without participating magnetization patterns of magnetic layer. In case of CoCrTa/Si that prepared with ultra thin underlayer, crystalline orientation of CoCrTa was improved rather underlayer thickness 1nm, it was expected that amorphous Si layer played a important role in not only underlayer but also seed layer.t also seed layer.r.

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Permalloy 다층화와 CoZrNb 중간층이 CoCr/NiFe 매체의 기록특성에 미치는 영향 (Effects of Permalloy Multilayered Schemes and CoZrNb Intermediate Layer on Recording Characteristics of CoCr/NiFe Media)

  • 장평우;이택동;박관수
    • 한국자기학회지
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    • 제4권1호
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    • pp.20-24
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    • 1994
  • CoCr/NiFe 이중매체의 기록, 재생특성은 CoCr 기록층뿐만 아니라 NiFe연자성층의 자기적 특성에도 강하게 영향을 받는다. NiFe/Ge의 다층화로 CoCr/NiFe 매체의 기록감도와 재생전압을 증 가시킬 수 있었으며 이것은 연자성층의 높은 투자율과 CoCr기록층의 높은 수직이방성에 기인하였다. 그러나 연자성층의 투자율의 향상이 기록감도의 현저한 향상에 비해 재생전압의 현저한 증가를 가 져오지 못하는데 이것은 유한요소수치해석에서도 확인할 수 있었다. 반면에 NiFe/Ge 다층연자성박 막을 사용한 CoCr/NiFe 매체의 피크이동(peak shift)특성은 NiFe 단층연자성박막을 사용한 CoCr/NiFe 매체에 비해 악화되었다. 그러나 CoCr층과 NiFe층 사이에 10 nm의 CoZrNb 박막을 삽입시키면 높은 재생전압과 낮은 파크이동을 동시에 얻을 수 있었다. 이 연구에서 는 이러한 기록, 재생특성을 미 세구조와 연관시켜 검토하였다.

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Co-Cr(-Ta)/Si 이층막의 자기적 특성 (Magnetic Properties of Co-Cr(-Ta)/Si Bilayered Thin Film)

  • 김용진;박원효;금민종;최형욱;김경환;손인환
    • 한국전기전자재료학회논문지
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    • 제15권3호
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    • pp.281-286
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    • 2002
  • In odder to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. First, we prepared CoCr and CoCrTa single layer using the Facing Targets Sputtering system to investigate theirs properties. It was revealed that with increasing the film thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. The CoCrTa thin film showed bettor crystalline and magnetic characteristics than CoCr thin film. As a result of investigating magnetic properties of CoCr and CoCrTa magnetic layer on introducing the Si underlayer, perpendicular coercivity and saturation magnetization of CoCr/Si and CoCrTa/Si bilayered thin film were decreased due to the increased grain size and diffusion of Si atoms to magnetic layer. And they showed constant with increasing the film thickness of Si thin film. However, in case of CoCrTa/Si bilayered thin film, in-plane coercivity was controlled low at about 250Oe. The c-axis orientations of CoCr/si and CoCrTa/Si bilayered thin film showed a good crystalline characteristics as about $2^{\circ}$.

Cu/buffer layer/polyimide 시스템에서 Cr, 50%Cr-50%Ni 및 Ni 버퍼층에 따른 접착력 및 계면화학 (Adhesion Strength and Interface Chemistry with Cr, 50%Cr-50%Ni or Ni Buffer Layer in Cu/buffer Layer/polyimide System)

  • 김명한
    • 한국재료학회지
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    • 제19권3호
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    • pp.119-124
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    • 2009
  • In the microelectronics packaging industry, the adhesion strength between Cu and polyimide and the thermal stability are very important factors, as they influence the performance and reliability of the device. The three different buffer layers of Cr, 50%Cr-50%Ni, and Ni were adopted in a Cu/buffer layer/polyimide system and compared in terms of their adhesion strength and thermal stability at a temperature of $300^{\circ}C$ for 24hrs. A 90-degree peel test and XPS analysis revealed that both the peel strength and thermal stability decreased in the order of the Cr, 50%Cr-50%Ni and Ni buffer layer. The XPS analysis revealed that Cu can diffuse through the thin Ni buffer layer ($200{\AA}$), resulting in a decrease in the adhesion strength when the Cu/buffer layer/polyimide multilayer is heat-treated at a temperature of $300^{\circ}C$ for 24hrs. In contrast, Cu did not diffuse through the Cr buffer layer under the same heat-treatment conditions.

EFFECT OF PARAMAGNETIC Co$_{67}$Cr$_{33}$ UNDERLAYER ON CRYSTALLOGRAPHIC AND MAGNETIC CHARACTERISTICS OF Co-Cr-Ta LAYERS IN PERPENDICULAR MAGNETIC RECORDING MEDIA

  • Kim, Kyung-Hwan;Nakagawa, Shigeki;Takayama, Seiryu;Naoe, Masahiko
    • 한국표면공학회지
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    • 제29권6호
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    • pp.847-850
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    • 1996
  • The bi-layered films composed of Co-Cr-Ta layers and paramagnetic $Co_{67}Cr_{33}$ underlayer were deposited by suing Facing Targets Sputtering(FTS). The effects of $Co_{67}Cr_{33}$ underlayer on the crystallographic and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}Cr_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was imporved by the $Co_{67}Cr_{33}$ underlayer rather than Ti ones. However, te coercivity H$_{c\bot}$ of Co-Cr-Ta layers deposited on $Co_{67}Cr_{33}$ underlayer was as low as 250 Oe even at substrate temperature of $220^{\circ}C$. This H$_{c\bot}$ decrease seems to be attributed to the effect of the $Co_{67}Cr_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.

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CoCrMo/Cr 자성박막의 제조조건이 자기적성질에 미치는 영향 (The Effect of Sputtering Conditions on Magnetic Properties of CoCrMo/Cr Magnetic Thin Film)

  • 박정용;남인탁;홍양기
    • 한국자기학회지
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    • 제3권4호
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    • pp.320-324
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    • 1993
  • 스퍼터된 자기기록매체 Co-10at%Cr-2at%Mo/Cr 자성박막의 제조조건이 미세구조와 자기적특성에 미치는 영향을 조사하였다. 기판의 온도는 상온-$250^{\circ}C$로 하였으며 Cr하지층과 CoCrMo층의 두께는 각각 $1000-2500\AA$, $300-800\AA$이었다. CoCrMo층의 두께가 $500{\AA}-800{\AA}$ 증가함에 따라 결정립은 미세화 되었으며 균일한 조직을 나타냈다. 보자력은 기판의 온도, CoCrMo자성층, Cr하지층의 두께 를 증가시켰을때 향상되었다. 기판온도가 $250^{\circ}C$, 자성층의 두께가 $700\AA$, Cr 하지층의 두께가 $1000\AA$일때 880 Oe의 보자력을 나타냈다.

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CoCrTa/Ti 이층막의 하지층기판온도의존성 및 특성개선 (Improvement of characteristics and dependence on underlayer substrate temperature of CoCrTa/Ti double layer)

  • 김용진;성하윤;금민종;손인환;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.492-495
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    • 2000
  • In order to develop an ultra-thin CoCr perpendicular magnetic recording layer, we prepared CoCrTa/Ti double layer for perpendicular magnetic recording media by new facing targets sputtering system, Crystallgraphics and magnetic characteristics of CoCrTa on underlayer substrate temperature have been investigated. Crystallgraphic and magnetic characteristic of thin films were evaluated by X-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and atomic force microscopy(AFM). The coercivity and anisotropy field was increased by increasing under layer substrate temperature, c-axis orientation of CoCrTa magnetic recording layer was improved 8$^{\circ}$ to 5.6$^{\circ}$when under layer substrate temperature was 250[$^{\circ}C$]. Also, through annealing effect for CoCrTa/Ti double layer, it was certain that crystallgraphics and magnetic characteristics was improved.

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이온 질화에 의해 크롬 도금 층 위에 형성된 크롬 질화물의 성장에 관한 전산 모사 (Computer Simulation for the Growth of Cr-nitride Formed on Electroplated Cr during ion-Nitriding)

  • 엄지용;이병주;남기석;권식철;권혁상
    • 한국표면공학회지
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    • 제34권3호
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    • pp.231-239
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    • 2001
  • The structure and composition of Cr-nitrides formed on an electroplated hard Cr layer during an ionnitriding process was analyzed, and the growth kinetics of the Cr-nitrides was examined as a function of the ion-nitriding temperature and time in order to establish a computer simulation model prediction the growth behavior of the Cr-nitride layer. The Cr-nitrides formed during the ion-nitriding at $550~770^{\circ}C$ were composed of outer CrN and inner $Cr_2$N layers. A nitrogen diffusion model in the multi-layer based on fixed grid FDM (Finite Difference Method) was applied to simulate the growth kinetics of Cr-nitride layers. By measuring the thickness of each Cr-nitride layer as a function of the ion-nitriding temperature and time, the activation energy for growth of each Cr-nitride was determined; 82.26 KJ/mol for CrN and 83.36 Kj/mol for $Cr_2$N. Further, the nitrogen diffusion constant was determined in each layer; $9.70$\times$10^{-12}$ /$m^2$/s in CrN and $2.46$\times$10^{-12}$ $m^2$/s in $Cr_2$N. The simulation on the growth kinetics of Cr-nitride layers was in good agreements with the experimental results at 550~72$0^{\circ}C$.

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CrN 코팅구조에 따른 Polymer Electrode Membrane Fuel Cell 금속분리판의 부식특성 비교 (Comparison of Corrosion Behavior of CrN Coated SUS316L with Different Layer Structure for Polymer Electrode Membrane Fuel Cell Bipolar Plate)

  • 백정호;한원규;강성군
    • 한국재료학회지
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    • 제20권4호
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    • pp.187-193
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    • 2010
  • Chromium nitride (CrN) samples with two different layer structures (multilayer and single layer) were coated on bipolar plates of polymer electrolyte membrane fuel cells (PEMFC) using the reactive sputtering method. The effects with respect to layer structure on corrosion resistance and overall cell performance were investigated. A continuous and thin chromium nitride layer ($Cr_{0.48}\;N_{0.52}$) was formed on the surface of the SUS 316L when the nitrogen flow rate was 10 sccm. The electrochemical stability of the coated layers was examined using the potentiodynamic and potentiostatic methods in the simulated corrosive circumstances of the PEMFC under $80^{\circ}C$. Interfacial contact resistance (ICR) between the CrN coated sample and the gas diffusion layer was measured by using Wang's method. A single cell performance test was also conducted. The test results showed that CrN coated SUS316L with multilayer structure had excellent corrosion resistance compared to single layer structures and single cell performance results with $25\;cm^2$ in effective area also showed the same tendency. The difference of the electrochemical properties between the single and multilayer samples was attributed to the Cr interlayer layer, which improved the corrosion resistance. Because the coating layer was damaged by pinholes, the Cr layer prevented the penetration of corrosive media into the substrate. Therefore, the CrN with a multilayer structure is an effective coating method to increase the corrosion resistance and to decrease the ICR for metallic bipolar plates in PEMFC.

ALD-Al2O3 보호층이 적용된 CrAlSiN 코팅막의 내부식성 특성에 관한 연구 (Effect of ALD-Al2O3 Passivation Layer on the Corrosion Properties of CrAlSiN Coatings)

  • 만지흠;이우재;장경수;최현진;권세훈
    • 한국표면공학회지
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    • 제50권5호
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    • pp.339-344
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    • 2017
  • Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.