• Title/Summary/Keyword: Copper polishing

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Electro-Catalytic Oxidation of Amoxicillin by Carbon Ceramic Electrode Modified with Copper Iodide

  • Karim-Nezhad, Ghasem;Pashazadeh, Ali;Pashazadeh, Sara
    • Journal of the Korean Chemical Society
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    • v.57 no.3
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    • pp.322-328
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    • 2013
  • Copper iodide was employed as a modifier for preparation of a new carbon ceramic electrode. For the first time, the catalytic oxidation of amoxicillin (AMX) was demonstrated by cyclic voltammetry, chronoamperometry and amperometry methods at the surface of this modified carbon ceramic electrode. The copper iodide modified sol-gel derived carbon ceramic (CIM-SGD-CC) electrode has very high catalytic ability for electrooxidation of amoxicillin. The catalytic oxidation peak current was linearly dependent on the amoxicillin concentration and the linearity range obtained was 100 to 1000 ${\mu}mol\;L^{-1}$ with a detection limit of 0.53 ${\mu}mol\;L^{-1}$. The diffusion coefficient ($D=(1.67{\pm}0.102){\times}10^{-3}\;cm^2\;s^{-1}$), and the kinetic parameter such as the electron transfer coefficient (${\alpha}$) and exchange current density ($j_0$) for the modified electrode were calculated. The advantages of the modified CCE are its good stability and reproducibility of surface renewal by simple polishing, excellent catalytic activity and simplicity of preparation.

Particle Removal on Buffing Process After Copper CMP (구리 CMP 후 버핑 공정을 이용한 연마 입자 제거)

  • Shin, Woon-Ki;Park, Sun-Joon;Lee, Hyun-Seop;Jeong, Moon-Ki;Lee, Young-Kyun;Lee, Ho-Jun;Kim, Young-Min;Cho, Han-Chul;Joo, Suk-Bae;Jeong, Hae-Do
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.1
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    • pp.17-21
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    • 2011
  • Copper (Cu) had been attractive material due to its superior properties comparing to other metals such as aluminum or tungsten and considered as the best metal which can replace them as an interconnect metal in integrated circuits. CMP (Chemical Mechanical Polishing) technology enabled the production of excellent local and global planarization of microelectronic materials, which allow high resolution of photolithography process. Cu CMP is a complex removal process performed by chemical reaction and mechanical abrasion, which can make defects of its own such as a scratch, particle and dishing. The abrasive particles remain on the Cu surface, and become contaminations to make device yield and performance deteriorate. To remove the particle, buffing cleaning method used in post-CMP cleaning and buffing is the one of the most effective physical cleaning process. AE(Acoustic Emission) sensor was used to detect dynamic friction during the buffing process. When polishing is started, the sensor starts to be loaded and produces an electrical charge that is directly proportional to the applied force. Cleaning efficiency of Cu surface were measured by FE-SEM and AFM during the buffing process. The experimental result showed that particles removed with buffing process, it is possible to detect the particle removal efficiency through obtained signal by the AE sensor.

A Study on the Optimized Copper Electrochemical Plating in Dual Damascene Process

  • Yoo, Hae-Young;Chang, Eui-Goo;Kim, Nam-Hoon
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.5
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    • pp.225-228
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    • 2005
  • In this work, we studied the optimized copper thickness in Cu ECP (Electrochemical Plating). In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge (bump, hump or over-plating amount), Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness. In the aspect of bump and dishing, the bulge increased according as target plating thickness decreased. Dishing of edge was larger than center of wafer. Also in case of electrical property, metal line resistance distribution became broad gradually according as Cu ECP thickness decreased. In conclusion, at least $20\%$ reduced Cu ECP thickness from current baseline; $0.8\;{\mu}m$ and $1.0\;{\mu}m$ are suitable to be adopted as newly optimized Cu ECP thickness for local and intermediate layer.

Optimization of Condition of Chemical Additives in Cu CMP Slurry (Cu CMP 슬러리에서 화학첨가제 조건의 최적화)

  • Kim, In-Pyo;Kim, Nam-Hoon;Lim, Jong-Heun;Kim, Sang-Yong;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.304-307
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    • 2003
  • Replacement of aluminum by copper for interconnections in the semiconductor industry has raised a number of important issues. The integration of copper interconnection can be carried out by CMP(chemical mechanical polishing) is used to planarize the surface topography. In this experiments, we evaluated the optimization of several conditions for chemical additives during Cu CMP process. It was presented that the main cause of grown particle size is tartaric acid. The particle size was in inverse propotion to a quantity of bead and the time of milling process. The slurry stabilizer and oxidizer have been shown to have very good effect by addition in later milling process.

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Preparation of Low-cost and Flexible Metal Mesh Electrode Used in the Hybrid Solar Cell by Simple Electrochemical Depositon (전기화학적 전착에 의한 태양전지용 저가 유연 금속 메쉬 제작)

  • Lee, Ju-Yeol;Lee, Sang-Yeol;Lee, Ju-Yeong;Kim, Man
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.123.1-123.1
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    • 2017
  • Hybrid solar cells have intensively studied in recent years due to their advantages such as cost effectiveness and possibility of applications in flexible and transparent devices. It is critical to fabricate individual layer composed of organic and inorganic materials in the hybrid solar cell at low cost. Therefore, it is required to manufacture cheaply and enhance the photon-to-electricity conversion efficiency of each layer in the flexible solar cell industry. In this research, we fabricated pure Cu metal mesh electrode prepared by using electroplating and/or electroless plating on the Ni mold which was manufacture through photolithography, electroforming, and polishing process. Copper mesh was formed on the surface of nickel metal working master when pulsed electrolytic copper deposition were performed at various plating parameters such as plating time, current density, and so on. After electrodeposition at 2ASD for 5~30seconds, the line/pitch/thickness of copper mesh sheet was $1.8{\sim}2.0/298/0.5{\mu}m$.

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A Study on the Corrosion Effects by Addition of Complexing Agent in the Copper CMP Process

  • Kim, Sang-Yong;Kim, Nam-Hoon;Kim, In-Pyo;Chang, Eui-Goo;Seo, Yong-Jin;Chung, Hun-Sang
    • Transactions on Electrical and Electronic Materials
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    • v.4 no.6
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    • pp.28-31
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    • 2003
  • Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H$_2$O$_2$ 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

  • Lin, Paul-Chang;Xu, Jin-Hai;Lu, Hong-Liang;Zhang, David Wei;Li, Pei
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.3
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    • pp.319-325
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    • 2017
  • Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.

Technology of selective absorber coatings on solar collectors using black chromium+3 sulfate acid on substrates (흑색 황산3가크롬을 이용한 태양열 흡열판 선택흡수막 도금기술)

  • Ohm, Tae-In;Yeo, Woon-Tack;Kim, Dong-Chan
    • Journal of the Korean Solar Energy Society
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    • v.33 no.3
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    • pp.27-35
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    • 2013
  • One of the most important factors that have a large influence on performance of the solar water heater system is performance of the solar collector, more detailedly, coating technology on the surface of the solar collector, which can provide high solar absorptance and low emittance. The core of the coating technology is to coat solar selective surfaces. In this study, various performance experiments are carried out using $Cr_2(SO_4)_3{\cdot}15H_2O$ coating technology. Here, IGBT(Insulated Gate Bipolar Transistor) of 5000A-15V was used as the surface processing rectifier which can stably output power and also can control voltage and current. The plating solution mainly contains black chrome$^{+3}$ concentration, H-y Conductivity, N-u Complex, NF Additive and NC-2 Wetter. Before applying the black chrome coating on the copper plate, optimal conditions are provided by using various preprocessing methods such as removal of fat, activation, electrolytic polishing, nickel strike, copper sulfate plating and bright neckel plating, and then the automatic continuous coating experiment are performed according to plating time and cathode current density. In the experiment, after the removal of fat, chemical polishing, nickel strike and activation processes as the preprocessing methods, the black chrome coating was performed in a plate solution temperature of $28^{\circ}C$ and a cathode current density of $18A/cm^2$ for 90 seconds. The thickness of chrome and nickel on the coated plate is $0.389{\mu}m$, $159{\mu}m$ respectively. As a result of the coating experiment, it showed the most excellent performance having a high solar absorptance of 98% and a low emittance of $5{\pm}1%$ when the black chrome surface had a thickness of $0.398{\mu}m$.

A STUDY ON THE MICROSTRUCTURES OF THE AMALGAM ALLOYS AND AMALGAMS (치과용 아말감합금 및 아말감의 마세구조에 관한 연구)

  • Yeon, Sang-Heum;Lee, Chung-Sik;Lee, Myung-Jong;Um, Chung-Moon
    • Restorative Dentistry and Endodontics
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    • v.21 no.1
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    • pp.87-105
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    • 1996
  • The purpose of this study is to investigate the characteristics of the compositions and phases of amalgam alloys and amalgams by using EMPA and X-ray diffractometer. Each specimen was made from Caulk Fine Cut Clow copper lathe cut amalgam), Caulk Spherical (low copper spherical amalgam), Tytin (high copper unicorn position amalgam), Dispersally (high copper admixed amalgam) and Valiant (Palladium enriched amalgam). For preparing amalgam alloys, Tytin and Valiant were used as powder forms and the others were used as tablet forms after being polished with polishing machine. For preparing amalgams, each amalgam alloy and Hg were measured, and triturated by mechanical amalgamater according to user's instructions. After triturating, the triturated mass was inserted to cylindrical metal mold and simultaneously adapted by cylindrical condenser with same diameter and condensed by Instron universal testing machine with 80kg pressure & 1mm/min speed. Each specimen was removed from the metal mold and stored at room temperature for a week. The specimen was polished with the same polishing machine for amalgam alloy. For observation of microstructure and analysis of composition of amalgam alloys and amalgams, EMPA was used to get secondary electron images, backscattered images and characteristic X-ray images of Ag, Sn, Cu, Zn, Hg. To analyze compositions of amalgam alloys and amalgams, X-ray diffractometer was used. Amalgam alloys were scanned at the range of 2${\theta}$ of 30-$85^{\circ}$ and the speed of $4^{\circ}$/min with Cuka line and amalgams were scanned at the range of 2${\theta}$ of 28-$44^{\circ}$ and the speed of $4^{\circ}$/min with Cuka line. By comparing obtained d(distance between surfaces) and d of expected phases and atoms in amalgam alloys and amalgams in ASTM card, phases and atoms were identified. The results were as follows, 1. In Caulk Fine Cut amalgam alloy typical ${\gamma}$ phase was shown, and in amalgam, ${\gamma}$, ${\gamma}_1$ and ${\gamma}_2$ phases were observed. 2. In Caulk Spherical amalgam alloy ${\gamma}$, Ag, Cu and $\varepsilon$ phases were shown, and in amalgam ${\gamma}$, ${\gamma}_1$, ${\gamma}_2$ and $\eta$ phases were observed. 3. In Tytin amalgam alloy ${\gamma}$, Cu and $\varepsilon$ phases were shown, and in amalgam ${\gamma}$, ${\gamma}_1$, $\eta$ and $\varepsilon$ phases were observed. 4. In Dispersalloy ${\gamma}$, Ag, Cu and $\varepsilon$ phases were shown, and in amalgam ${\gamma}$, ${\gamma}_1$, $\eta$ and $\varepsilon$ phases were observed. 5. In Valiant alloy ${\gamma}$, Cu and e phases were shown, and in amalgam ${\gamma}$, ${\gamma}_1$, $\eta$ and $\varepsilon$ phases were observed.

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Planarization technology of thick copper film structure for power supply (전력 소자용 후막 구리 구조물의 평탄화)

  • Joo, Suk-Bae;Jeong, Suk-Hoon;Lee, Hyun-Seop;Kim, Hyoung-Jae;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.523-524
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    • 2007
  • This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

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