• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.40-42
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• 2011

An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 ${\mu}m$ 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.118-120
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• 2009

We reported that the evidence of oxygen doping to copper-phthalocyanine (CuPc) by $O_2$-plasma treatment to Au electrode of inverted top emitting organic light emitting diodes (ITOLEDs). The operation voltage of OLEDs at 150 mA/$cm^2$ decreased from 16.1 to 10.3 V as oxygen atoms indiffued to CuPc layer using $O_2$-plasma. Synchrotron radiation photoelectron spectroscopy results showed that a new bond of Cu-O appeared and the energy difference between the highest occupied molecular orbital and $E_F$ is lowered by 0.20 eV after plasma treatment. Thus the hole injection barrier was lowered, reducing the turn-on voltage and increasing the quantum efficiency of OLEDs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.758-760
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

• Journal of the Korean Graphic Arts Communication Society
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• v.9 no.1
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• pp.1-11
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• 1991

In this reseach, double-layered photoconductor consist of the carrier generation layer(CGL) of $\varepsilon$ type copper phthalocyanine thin film by an aqueous coating method and the carrier transport layer(CGL) of polyvinyl carbazol(PVK) by spin coating. We inverstigated effect of the surfactant solution and cathod electrolysis to the crystal type of $\varepsilon$-CuPc in CGL with TEM, SEM and X- ray diffraction spectroscopy and studied the mechanism of an aqueous coating for the preparation of CGL. The effect of the washing of CGL about the electrophotographic characteristics of the $\varepsilon$-CuPc/PVK doublelayered photoconductors is studied also.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.943-946
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• 2011

The electronic absorption and surface morphology evolution of two types of molecular double layer thin films, copper phthalocyanine (CuPc) layer deposited on chloro[subphthalocyaninato]boron(III) (SubPc) layer, denoted as SubPc/CuPc, and vice versa, with various thicknesses were investigated using ultraviolet (UV)-visible spectroscopy and atomic force microscopy (AFM). Both types of double layer structures showed similar broadened absorption patterns in the UV-visible region that were consistent with the fitted spectra following simple linear combination of the single layer absorption spectra of the two materials. In contrast, the surface morphology of double layer structures was dependent on the order of deposition. For the CuPc/SubPc structures, surface morphology was characterized by elongated grains, which are characteristic of SubPc thin films, indicating that the morphological influence of the underlying CuPc layer on the subsequent SubPc layer was not large. For the SubPc/CuPc structures, however, the underlying SubPc layer acted as a morphological template for the subsequently deposited CuPc layer. It was also observed that the grain size of the CuPc layer varied according to the thickness of the underlying SubPc layer.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.751-753
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm. and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.548-551
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different substrate temperature. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.214-214
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• 2009

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.25-25
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• 2001