• 한국세라믹학회지
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• 제37권3호
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• Journal of Preventive Medicine and Public Health
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• 제31권2호
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• pp.265-274
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• 1998

To investigate the change of nitric oxide(NO), copper, and zinc in serum on smoking and alcohol ingestion in young adults, this study was performed in a cross-sectional study in 127 healthy men in Korea who had HBsAg(-), HCVAb(-), and no symptomatic liver, heart, gastrointestinal, chronic diseases, and inflammatory sign(lower than 10,000 white blood cell count in CBC). At the men's entry into the study, blood samples were drawn from each subject and immediately centrifuged for analysis of NO, copper, and zinc. Each man completed a questionnaire that provided information on smoking, alcohol intake and present and past medical history NO was analyzed by HPLC(Green et al., 1982), copper and zinc by atomic absorption spectrophotometer with air-acetylene flame and total cholesterol(TC) by Spectrum EPX. Smoking(number of cigarettes per day and pack-year) and alcohol intake was grouped fertile. Copper was adjusted for age and zinc and for age and TC. NO, copper, and zinc on smoking and alcohol ingestion were analyzed in general linear models, respectively. NO, copper and zinc in serum did not show statistical differences between non-smoking and high-smoking group and no-alcohol intake and high-alcohol intake group. This study suggested that copper, zinc, and NO was not. good biological marker for early effect by smoking and alcohol intake in young adults. However, selection bias should be considered in evaluation of this result. A large prospective study will be needed in advance on usefulness of copper, zinc, and NO as a marker for risk factors and early change of atherosclerosis.

• Nuclear Engineering and Technology
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• 제55권8호
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• pp.2742-2746
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• 2023

The corrosion behavior of copper immersed in dilute oxychloride solution (100 mM) was studied through surface investigation and in-situ monitoring of open-circuit potential. The copper corrosion was initiated with copper dissolution into a form of CuCl^-₂, resulting in mass decrease within the first 40 h of immersion. This was followed by a hydrolysis reaction initiated by the CuCl^-₂ at the copper surface, after which oxide products were formed and deposited on the surface, resulting in a mass increase. The formation of nucleation sites for copper oxide and its lateral extension during the corrosion process were examined using focused ion beam (FIB)-scanning electron microscopy (SEM). The presence of metastable compounds such as atacamite (CuCl₂·3Cu(OH)₂) on the corroded copper surface was revealed by X-ray photoelectron spectra (XPS) and transmission electron microscopy (TEM)-energy dispersive spectrometry (EDS) analysis.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.222-226
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• 1998

$Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.167-168
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• 2006

A hyrdrothermal synthesis has been developd to prepare rod-like crystals of copper oxide using copper nitrate trihydrate as a function of synthesis temperature, stirring speed and solution pH value. The properties of the fabricated crystals were studied using scanning electron microscopy, X-ray diffraction and particle size analysis. The morphology of the synthesized CuO was dependent on both the pH value of the solution and the morphology of the seed materials. Synthesized particles have regular morphologies and a uniform size distribution.

• 한국표면공학회지
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• 제52권5호
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• pp.258-264
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• 2019

Assembling heterostructures by combining dissimilar oxide semiconductors is a promising approach to enhance charge separation and transfer in photoelectrochemical (PEC) water splitting. In this work, the CuO nanorods array/$Cu_2O$ thin film bilayered heterostructure was successfully fabricated by a facile method that involved a direct electrodeposition of the $Cu_2O$ thin film onto the vertically oriented CuO nanorods array to serve as the photoelectrode for the PEC water oxidation. The resulting copper-oxide-based heterostructure photoelectrode exhibited an enhanced PEC performance compared to common copper-oxide-based photoelectrodes, indicating good charge separation and transfer efficiency due to the band structure realignment at the interface. The photocurrent density and the optimal photocurrent conversion efficiency obtained on the CuO nanorods/$Cu_2O$ thin film heterostructure were $0.59mA/cm^2$ and 1.10% at 1.06 V vs. RHE, respectively. These results provide a promising route to fabricating earth-abundant copper-oxide-based photoelectrode for visible-light-driven hydrogen generation using a facile, low-cost, and scalable approach of combining electrodeposition and hydrothermal synthesis.

• 한국토양환경학회지
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• 제4권3호
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• pp.77-84
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• 1999

본 논문에서는 고농도의 중금속 (납, 구리)으로 오염된 세 가지의 토양을 대상으로 sequential extraction 방법을 사용하여 토양과 중금속의 차이에 따른 결합 특성을 밝혀내고자 하였다. 고농도의 납과 구리로 오염된 토양을 형태별로 추출하였을 때 토양의 특성과 중금속의 종류에 따라 다른 결과를 보였다. 납은 문화동 토양에서는 Carbonate 형태가 37.7%로 가장 높았고 농토는 Amorphous Fe oxide 형태가 23.9%, 공단 토양에서는 Exchangeable 형태가 22.9%로 나타났다. 이에 비하여 구리는 세 가지 토양에서 공통적으로 Organically bound 형태가 농토에서 26.1%, 문화동 토양은 20.4%. 공단 토양에서는 24.1%로 높게 나타났고 Carbonate 형태와 Amorphous Fe oxide형태의 비율도 높게 나타났다. 또한 Crystallized Fe oxide 형태와 Residuals 형태도 납보다 높은 비율을 나타냄으로서 구리가 납보다는 토양과 강한 결합을 형성하는 것으로 생각된다. 이러한 토양과 중금속의 결합 특성은 오염 토양의 복원시 유용한 자료가 될 수 있다.

• 한국재료학회지
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• 제26권2호
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• pp.84-89
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• 2016

We present the rectifying and nitrogen monoxide (NO) gas sensing properties of an oxide semiconductor heterostructure composed of n-type zinc oxide (ZnO) and p-type copper oxide thin layers. A CuO thin layer was first formed on an indium-tin-oxide-coated glass substrate by sol-gel spin coating method using copper acetate monohydrate and diethanolamine as precursors; then, to form a p-n oxide heterostructure, a ZnO thin layer was spin-coated on the CuO layer using copper zinc dihydrate and diethanolamine. The crystalline structures and microstructures of the heterojunction materials were examined using X-ray diffraction and scanning electron microscopy. The observed current-voltage characteristics of the p-n oxide heterostructure showed a non-linear diode-like rectifying behavior at various temperatures ranging from room temperature to $200^{\circ}C$. When the spin-coated ZnO/CuO heterojunction was exposed to the acceptor gas NO in dry air, a significant increase in the forward diode current of the p-n junction was observed. It was found that the NO gas response of the ZnO/CuO heterostructure exhibited a maximum value at an operating temperature as low as $100^{\circ}C$ and increased gradually with increasing of the NO gas concentration up to 30 ppm. The experimental results indicate that the spin-coated ZnO/CuO heterojunction structure has significant potential applications for gas sensors and other oxide electronics.

• Carbon letters
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• 제11권2호
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• pp.117-121
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• 2010

The composites of alginate, carbon nanotube, and iron(III) oxide were prepared for the removal of heavy metal in aqueous pollutant. Both alginate and carbon nanotube were used as an adsorbent material and iron oxide was introduced for the easy recovery after removal of heavy metal to eliminate the secondary pollution. The morphology of composites was investigated by FE-SEM showing the carbon nanotubes coated with alginate and the iron oxide dispersed in the alginate matrix. The ferromagnetic properties of composites were shown by including iron(III) oxide additive. The copper ion removal was investigated with ICP AES. The copper ion removal efficiency increased greatly over 60% by using alginate-carbon nanotube composites.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.