• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.653-654
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• 2005

Stick-slip friction is one of the material removal mechanisms in tribology. This stick-slip friction occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction force monitoring system for chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. It seems that the stick-slip friction causes scratches on the surface of moving parts. In this paper, A study on the scratches which occur during copper CMP was conducted in a view of stick-slip friction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.166-169
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• 2003

In this study, we evaluated the characteristics by the addition of 3 different kinds of nonionic surfactant to improve the dispersion stability of slurries. Slurry stability is an issue in any industry in which settling of particles can result in poor performance. So we observed the variation of particle size and settling rate when the concentration and addition time of surfactant are changed. When the surfactant is added after milling process, the particle size and pH became low. It is supposed that the particle agglomeration was disturbed by adsorption of surfactant on alumina abrasive. The settling rate was relatively stable when nonionic surfactant is added about 0.1~1.0 wt%. When molecular weight(MW) is too small like Brij 35, it was appeared low effect on dispersion stability. Because it can't prevent coagulation and subsequent settling with too small MW. The proper quality of MW for slurry stability was presented about 500,000. Consequently, the addition of nonionic surfactant to alumina slurry has been shown to have very good effect on slurry stabilization. If we apply this results to copper CMP process, it is thought that we will be able to obtain better yield.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.537-537
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• 2008

Copper (Cu) has been widely used for interconnection structure in intergrated circuits because of its properties such as a low resistance and high resistance to electromigration compared with aluminuim. Damascene processing for the interconnection structure utilizes 2-steps chemical mechanical polishing(CMP). After polishing, the removal of abrasive particles on the surfaces becomes as important as the polishing process. In the paper, buffing process for the removal of colloidal silica from polished Cu wafer was proposed and demonstrated.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.435-437
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• 2002

Polishing of copper, a process called copper chemical mechanical polishing, is a critical, intermediate step in the planarization of silicon wafers. During polishing, the electrodeposited copper films are removed by slurries: and the differential polishing rates between copper and the surrounding silicon dioxide leads to a greater removal of the copper. The differential polishing develops dimples and furrows; and the process is called dishing and erosion. In this work, we present the results of experiments on dishing and erosion of copper-CMP, using patterned silicon wafers. Results are analyzed for the pattern factors and properties of the copper layers. Three types of pads - plain, perforated, and grooved - were used for polishing. The effect of slurry chemistries and pad soaking is also reported.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1300-1303
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• 2004

Copper는 낮은 저항률과 높은 Electromigration 저항 때문에 반도체 소자에 배선 재료로 사용된다. CMP 공정을 이용 하여 Cu wafer의 여러 가지 특성을 파악하기에는 wafer의 소모량이 많고 고가가의 비용이 예상 되므로, 본 논문에서는 비용절감을 위하여 wafer를 Disc로 대체 하고자 실험을 진행 하였고 Cu wafer와 Disc의 비료 방법은 우선 PM-5 (Genitech. co) 장비를 이용하여 removal rate의 차이점을 알 아 보았으며, 서로의 etch rate을 reomval rate과 비교하였다. EG&G 273A를 통하여 Cu wafer와 disc의 corrosion potential과 $R_p$ (Polarization resistance)값을 서로 비교 하였다. 이 논문에서는 이러한 것들을 서로 비교 하여, Cu wafer와 disc에서의 상관관계를 알고자 하였으며, 만약에 Cu wafer와 disc의 특성이 비슷하다면, Cu wafer 대신에 disc를 이용 하여 실험하여도 되는지에 관하여 조사 하였다.

• 한국정밀공학회지
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• 제34권2호
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• pp.101-106
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• 2017

The chemical mechanical planarization (CMP) process combines the chemical effect of slurry with the mechanical effect of abrasive (slurry)-wafer-pads The slurry delivery system has a notable effect on polishing results, because the slurry distribution is changed by the supply method. Thus, the investigation of slurry pumps and nozzles with regard to the slurry delivery system becomes important. This paper investigated the effect of a centrifugal slurry pump on a spray nozzle system in terms of uniform slurry supply under a rotating copper (Cu) wafer, based on experimental results and computational fluid dynamics (CFD). In conventional tools, the slurry is unevenly and discontinuously supplied to the pad, due to a pulsed flow caused by the peristaltic pump and distributed in a narrow area by the tube nozzle. Adopting the proposed slurry delivery system provides a higher uniformity and lowered shear stress than usual methods. Therefore, the newly developed slurry delivery system can improve the CMP performance.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.19.2-19.2
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• 2006

• 자원리싸이클링
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• 제17권4호
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• pp.37-46
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• 2008

본 연구는 전자산업으로부터 발생하는 CMP 폐수와 유사한 $0.3{\sim}0.5mg/ml$ 구리를 함유한 조제 황산 용액으로부터 DOWEX G-26 양이온 교환 수지를 사용한 구리 회수 공정 개발에 관한 것이다. 함구리 황산 용액으로부터 구리를 회수하기 위해 용액의 pH, 수지의 사용량, 용액의 산 농도, 용액과 수지의 접촉시간 등을 변수로 다양한 조건에서의 회수 실험을 실시하였다. 평형 pH 2.5, 용액/수지의 비 100mL/g 조건에서 14분의 접촉으로 99.99%의 구리가 흡착되었다. 구리의 흡착은 Langmuir isotherm을 따랐으며, 반응치수는 2차였다. 흡착된 구리는 묽은 황산에 의해 수지로부터 효과적으로 용리되었으며, 이로부터 농축용액을 만들 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제8권2호
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• pp.67-72
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• 2007

High Pressure Micro Jet (HPMJ) pad conditioning system was investigated as an alternative to diamond disc conditioning in copper CMP. A series of comparative 50-wafer marathon runs were conducted at constant wafer pressure and sliding velocity using Rohm & Haas IC1000 and Asahi-Kasei EMD Corporation (UNIPAD) concentrically grooved pads under ex-situ diamond conditioning or HPMJ conditioning. SEM images indicated that fibrous surface was restored using UNIPAD pads under both diamond and HPMJ conditioning. With IC1000 pads, asperities on the surface were significantly collapsed. This was believed to be due to differences in pad wear rates for the two conditioning methods. COF and removal rate were stable from wafer to wafer using both diamond and HPMJ conditioning when UNIPAD pads were used. Also, HPMJ conditioning showed higher COF and removal rate when compared to diamond conditioning for UNIPAD. On the other hand, COF and removal rates for IC1000 pads decreased significantly under HPMJ conditioning. Regardless of pad conditioning method adopted and the type of pad used, linear correlation was observed between temperature and COF, and removal rate and COF.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.565-566
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• 2006

Slurry used in metal chemical mechanical polishing normally consists of an oxidizer, a complexing agent, a corrosion inhibitor and an abrasive. This paper investigates effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$ as an oxidizer. In order to study chemical effects of a citric acid, x-ray photoelectron spectroscopy were performed on Cu sample after Cu etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but Cu/$Cu_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu Surface decrease. According to decrease of wear resistance on Cu surface, removal rate increases from $285\;{\AA}/min$ to $8645\;{\AA}/min$ in Cu CMP.