• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.382-385
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• 2003

Chemical mechanical polishing(CMP) is an essential process in the production of copper-based chips. On this work, the stability of Hydrogen Peroxide($H_2O_2$) as oxidizer of Cu CMP slurry has been investigated. $H_2O_2$ is known as the most common oxidizer in Cu CMP slurry. Copper slowly dissolves in $H_2O_2$ solutions and the interaction of $H_2O_2$ with copper surface had been studied in the literature. Because hydrogen peroxide is a weak acid in aqueous solutions, a passivation-type slurry chemistry could be achieved only with pH buffered solution.[1] Moreover, $H_2O_2$ is so unstable that its stabilization is needed using as oxidizer. As adding KOH as pH buffering agent, stability of $H_2O_2$ decreased. However, stability went up with putting in small amount of BTA as film forming agent. There was no difference of $H_2O_2$ stability between KOH and TMAH at same pH. On the other hand, $H_2O_2$ dispersion of TMAH is lower than that of KOH. Furthermore, adding $H_2O_2$ in slurry in advance of bead milling lead to better stability than adding after bead milling. Generally, various solutions of phosphoric acids result in a higher stability. Using Alumina C as abrasive was good at stabilizing for $H_2O_2$; moreover, better stability was gotten by adding $H_3PO_4$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.523-524
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• 2007

This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.136-139
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• 2003

Copper has attractive properties as a multi-level interconnection material due to lower resistivity and higher electromigration resistance as compared with Alumina and its alloy with Copper(0.5%). Among a variety of agents in Copper CMP slurry, $H_2O_2$ has commonly been used as the oxidizer However. $H_2O_2$ is so unstable that it requires stabilization to use as oxidizer Hence, stabilization of $H_2O_2$ is a vital process to get better yield in practical CMP process. In this article the stability of Hydrogen Peroxide as oxidizer of Copper CMP slurry has been investigated. When alumina abrasive was used, $\gamma$-particle Alumina C had a better stability than $\alpha$-particle abrasive. As adding KOH as pH buffering agent, $H_2O_2$ stability in slurry decreased. Urea hydrogen peroxide was used as oxidizer, an enhanced stability was gotten. When $H_3PO_4$ as $H_2O_2$ stabilizer was added, the decrease of $H_2O_2$ concentration in slurry became slower. Even though adding $H_2O_2$ in slurry after bead milling lead to better stability than in advance of bead milling, it had a lower dispersibility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.82-82
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• 2007

The chemical mechanical polishing (CMP) process has been widely used to obtain global planarization of multilevel interconnection process for ultra large scale. integrated circuit applications. Especially, the application of copper CMP has become an integral part of several semiconductor device and materials manufacturers. However, the low-k materials at 65nm and below device structures because of fragile property, requires low down-pressure mechanical polishing for maintaining the structural integrity of under layer during their fabrication. In this paper, we studied electrochemical mechanical polishing (ECMP) as a new planarization technology that uses electrolyte chemistry instead of abrasive slurry for copper CMP process. The current-voltage (I-V) curves were employed we investigated that how this chemical affect the process of voltage induced material removal in ECMP of Copper. This work was supported by grant No. (R01-2006-000-11275-0) from the Basic Research Program of the Korea Science.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.603-604
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro- structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_3$ abrasive particles in CMP slurry.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.1269-1270
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1729-1730
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• 2006

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. According to the CMP removal rates and particle size distribution, and the micro-structures of surface layer as a function of oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_{2}O_{3}$ abrasive particles in CMP slurry.

• 대한화학회지
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• 제47권6호
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• pp.608-613
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• 2003

Post-Oxide CMP(Chemical-Mechanical Polishing) 결과 실리콘 웨이퍼를 오염 시키고 있는 슬러리 입자의 세정 가능성을 조사하기 위하여DHF(Diluted HF)에 비이온성 계면 활성제인 PAAE(Polyoxyethylene Alkyl Aryl Ether), 비양성자성 용제인 DMSO(Dimethylsulfoxide) 와 초순수의 혼합물인 새로운 세정액을 제조하였다. 세정력을 평가하기 위해서 세정제 내에서 각각 다른 제타 포텐셜을 갖는 실리카($SiO_2$), 알루미나($Al_2O_3$)와 PSL(polystylene latex) 입자를 실리콘 웨이퍼 표면의 산화막에 인위적으로 오염시킨 후 실험에 이용하였다. 초음파하에서 세정액의 성능 평가 결과 본 세정기술은 효과적인 입자의 세정능력과 금속이온에 대한 세정 능력을 나타내고 있음을 확인하였다. 즉 기존의 APM($NH_4OH,\;H_2O_2$와 D.I.W의 혼합물)과 달리 상온에서 세정이 가능하고 세정과정이 단축 되었으며, 낮은 농도의 HF를 사용함으로써 최소의 에칭에 의하여 표면 거칠기를 감소시킬 수 있음을 보여주고 있다. 또한 주요 CMP 금속 배선 물질들에 대한 낮은 부식력으로 기존의 CMP 후 세정공정에 뿐만 아니라 차세대CMP 공정으로 각광 받고 있는 Copper CMP 에 대한 Brush 세정 공정의 보조 세정제로 본 세정제가 적용될 가능성이 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.538-538
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• 2008

금속계열의 박막을 평탄화하기위해서는 슬러리에 함유된 산화제에 의해 부동태층의 형성이 선행되어야 한다. 따라서 본 논문에서는 Copper 박막의 표면을 부동태층으로 형성시키고 CMP공정을 하기위해 산화제에 dipping을 시켰으며 삼화제의 종류는 $H_2O_2$, MSW2000B, $KIO_3$로 하고 dipping 시간은 30초, 60초, 90초, 3분, 10분으로 하여 시간과 산화제 종류에 따른 부동태층의 변화를 연구하였다. 부동태층의 관찰은 FESEM을 이용하여 표면과 단면을 관찰하였고 부동태층의 조성비율은 EDX를 이용하여 조사하였다. MSW 2000B의 경우는 부동태층이 덩어리 모양으로 형성되었으며 포화현상은 3분에 일어났다. 반면에 $H_2O_2$의 경우는 부동태층이 침상 모양으로 형성되었으며 포화현상은 90초에 일어났다. 산화제에 의해 부동태층을 형성시킨 후 POLI-450을 이용하여 평탄화공정을 진행하였으며 CMP공정조건은 부동태층의 연질상태임을 감안하여 헤드 스피드 20rpm, 플레이튼 스피드 10rpm, 슬러리 주입속도 90ml/min, 공정온도는 상온으로 하여 진행하였다. $H_2O_2$를 산화제로 사용하여 dipping을 하고 CMP를 하였을 경우에 균일한 박막을 확보 할 수 있었으며 CMP 공정 후 copper 박막의 균일성은 FESEM을 이용하여 관찰 하였다.

• 한국전기전자재료학회논문지
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• 제18권1호
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• pp.24-29
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• 2005

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. Copper has been the candidate metallization material for ultra-large scale integrated circuits (ULSIs), owing to its excellent electro-migration resistance and low electrical resistance. However, it still has various problems in copper CMP process. Thus, it is important to understand the effect of the process variables such as turntable speed, head speed, down force and back pressure are very important parameters that must be carefully formulated in order to achieve desired the removal rates and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the main effect of the variables and the interaction between the various parameters during CMP. A better understanding of the interaction behavior between the various parameters and the effect on removal rate, non-uniformity and ETC (edge to center) is achieved by using the statistical analysis techniques. In the experimental tests, the optimum parameters which were derived from the statistical analysis could be found for higher removal rate and lower non-uniformity through the above DOE results.