• Proceedings of the Korea Society of Environmental Toocicology Conference
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• 2003.10a
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• pp.23-24
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• 2003

The goal of this study is to develop a biomarker used in monitoring abnormal behaviors of Japanese medaka (Oryzias latipes) as a model organism caused by hazardous chemicals. Japanese medaka was treated by copper and fluoranthene of appropriate sublethal concentrations after starvation for 48 hr. In this study we investigated neural toxicity of copper and fluoranthene in Japanese medaka (Oryzias latipes) along with comparative analysis of corresponding behavioral responses. The untreated individuals showed common behavioral characteristics (i.e., smooth and linear movements). Locomotive activity of the fish was monitored using an image processing and automatic data acquisition system. When treated with copper (100 ppb), the fish showed shaking patterns more frequently. As the concentration of copper increased to 1,000 ppb, activity decreased, and the fish showed an erratic movement. The treated with fluoranthene, however, showed stopping and abrupt change of orientation (100 ppb), and severely reduced locomotive activity and enhanced surfacing activity (1,000 ppb).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.82-82
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• 2007

The chemical mechanical polishing (CMP) process has been widely used to obtain global planarization of multilevel interconnection process for ultra large scale. integrated circuit applications. Especially, the application of copper CMP has become an integral part of several semiconductor device and materials manufacturers. However, the low-k materials at 65nm and below device structures because of fragile property, requires low down-pressure mechanical polishing for maintaining the structural integrity of under layer during their fabrication. In this paper, we studied electrochemical mechanical polishing (ECMP) as a new planarization technology that uses electrolyte chemistry instead of abrasive slurry for copper CMP process. The current-voltage (I-V) curves were employed we investigated that how this chemical affect the process of voltage induced material removal in ECMP of Copper. This work was supported by grant No. (R01-2006-000-11275-0) from the Basic Research Program of the Korea Science.

• Economic and Environmental Geology
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• v.26 no.3
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• pp.311-325
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• 1993

The Ohto and Tohyun copper mine which are located 4 km southeast of Euiseong, Gyeongsangbukdo, Republic of Korea show various common geologic and mineralogic features. Both copper deposits are of hydrothermal-vein types, and associated with fracture system developed during formation of the Geumseong-san caldera in late Cretaceous age. According to structures and mineral assemblages, the mineralization processes have progressed in four stages: three hypogene mineralization stages and one supergene stage. Three hypogene stages are 1) stage I forming $N5{\sim}20^{\circ}E$ veins in the Ohto mine, 2) stage II building $N5^{\circ}W{\sim}N5^{\circ}E$ veins in the Tohyun mine, and 3) stage ill bringing $N80^{\circ}E$ veins which crosscut veins of the stage II. The vein ores consist mainly of pyrite, arsenopyrite, galena and chalcopyrite, minor or trace amounts of magnetite, hematite, pyrrhotite, stannite, bournonite, boulangerite, stibnite, galenobismutite, native bismuth, marcasite, geothite and malachite. The main gangue minerals are quartz and calcite. Wallrock is altered by sericitization, chloritization, pyritization, carbonitization and argillization. Arsenic and copper contents in arsenopyrite increase from stage I to stage III (from 31.28 to 33043 atom.% As) and (from 0.04 to 0040 atom.% Co). Going from stage I to stage III Fe and Mn contents in sphalerite decreases from 12.56 to 0.44 wt.% and from 0.24 to 0.01 wt.%, respectively. The compositional data of arsenopyrite in the early stage I indicate a temperature of $420{\sim}365^{\circ}C$ and sulfur fugacity of $10^{-6.5}{\sim}10^{-8.3}$ atm. Chalcopyrite and pyrrhotite assemblage suggest that Middle stage I was deposited at below $334^{\circ}C$. The compositional data of arsenopyrite in early stage II suggest a temperature range of $425{\sim}390^{\circ}C$ and sulfur fugacity codition of $10^{-6.4}{\sim}10^{-7.3}$ atm. Based on fluid inclusion the Middle stage II was regarded as to be deposited at $420{\sim}337^{\circ}C$ (Chi et al., 1989). Referring composition of sphalerite and stannite middle-late stage II seem to be deposited around $246^{\circ}C$ and $10^{-16.5}$ atm. sulfur fugacity. The ${\delta}^{34}S$ values of sulfide minerals in the Stage I, II, III range from 4.9 to 7.6%0 and indicate igneous ore fluid origin. Based on differences in mineral assemblages, chemical composition and chemical environments of Ohto and Tohyun mine its mineralization are considered to be formed at diffent mineralization ages and by different ore fluids.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.174-177
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• 2007

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.194-200
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• 2002

MOCVD(metal-organic chemical vapor deposition) copper thin film was annealed at various conditions and the eletrical properties and micro-structures were investigated to find the optimal annealing condition and its effect. Cu thin film annealed at Ar 1 torr, $400^{\circ}C$ had the most improved resistivity of 1.98 $\mu\Omega$cm, and texture; the ratio of $I_{(111)}/I_{(200)}$ was varied from 2.03 to 3.11, and Cu thin film annealed at Ar 1 torr, $450^{\circ}C$ had the largest grain size and uniformity. After the annealing, the EM(electromigration) test was followed to ensure the improved properties by annealing. Compare to other conditions, Cu patterns annealed at Ar 1 torr, $400 ^{\circ}C$ had the most improved properties when it came to the EM resistance, which was due to the low resistivity, the preferential evolution of texture to (111) plane, and the reduction of surface roughness of annealed copper film.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.813-814
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• 2008

• Journal of the Korean Chemical Society
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• v.57 no.2
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• pp.169-171
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• 2013

• Bulletin of the Korean Chemical Society
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• v.25 no.7
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• pp.1085-1087
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.77.4-77
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• 1998

• Korean Journal of Optics and Photonics
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• v.17 no.3
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• pp.290-295
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• 2006

The coupling between copper wire and a THz electromagnetic wave is one of the important factors to build up the magnitude and spectrum of a THz wave. We measured a I THz spectrum range THz pulse into a $480{\mu}m$ diameter and 23cm long copper wire waveguide. We measured THz pulses up to $275{\mu}m$ air gap between the end of the copper wire and transmitter or receiver chips. The coupling sensitivity of the transmitter is 3 times bigger than that of the receiver. The THz pulses propagated to air by the end of the receiver-side copper wire tip acting as a transmitter antenna. We confirmed that the THz field concentrates near the copper wire surface by opening the pin hole to the copper wire waveguide.