• Transactions of Materials Processing
• /
• v.26 no.3
• /
• pp.174-180
• /
• 2017

In this study, a new spot welding with electric resistance heated dies is suggested for the spot welding of non-ferrous metal plates for drawing and concurrent spot welding. This welding method involves two heating processes such as heating by conduction of electric resistance heated dies and heating by resistance between contacted surfaces of two plates by welding current induced to copper dies for the fusion of contacted metal. This welding process has welding variables such as current induced in heated and copper dies, the inner diameters of heated dies, and edge shape of the copper dies. Experimental conditions for each current should be established to get successful welding strength. The welding strength could reach to the desired value in industrial fields under the following conditions of contact diameters of heated dies in this case of overlapped aluminum5052 plates with 0.3-mm thickness: inner and outer diameters of 5.0 and 16mm, respectively; diameter of copper dies, 5.0mm; heating current, 6.8kA in heated steel dies; welding current, 8.6 kA in copper dies.

• Korean Journal of Materials Research
• /
• v.18 no.3
• /
• pp.163-168
• /
• 2008

The morphology of three-dimensional (3D) cross-linked electrodeposits of copper and tin was investigated as a function of the content of metal sulfate and acetic acid in a deposition bath. The composition of copper sulfate had little effect on the overall copper network structure, whereas that of tin sulfate produced significant differences in the tin network structure. The effect of the metal sulfate content on the copper and tin network is discussed in terms of whether or not hydrogen evolution occurs on electrodeposits. In addition, the hydrophobic additive, i.e., acetic acid, which suppresses the coalescence of evolved hydrogen bubbles and thereby makes the pore size controllable, proved to be detrimental to the formation of a well-defined network structure. This led to a non-uniform or discontinuous copper network. This implies that acetic acid critically retards the electrodeposition of copper.

• BMB Reports
• /
• v.30 no.1
• /
• pp.60-65
• /
• 1997

Expression of human Cu.Zn-superoxide dismutase (SOD) with activity comparable to human erythrocyte enzyme was achieved in E. coli B21(DE3) by using the pET-17b expression vector containing a T7 promoter. Recombinant human SOD was found in the cytosol of disrupted bacterial cells and represented > 25% of the total bacterial proteins. The protein produced by the E. coli cells was purified using a combination of ammonium sulfate precipitation, Sephacryl S-100 gel filtration and DEAE-Sephacel ion exchange chromatography. The recombinant Cu,Zn-SOD and human erythrocyte enzyme were compared using dismutation activity, SDS-PAGE and immunoblotting analysis. The mass of the subunits was determined to be 15,809 by using a electrospray mass spectrometer. The copper specific chelator. diethyldithiocarbamate (DOC) reacted with the recombinant Cu,Zn-SOD. At $50{\mu}M$ and $100{\mu}M$ concentrations of DOC, the dismutation activity was not inhibited for one hour but gradually reduced after one hour. This result suggests that the reaction of DOC with the enzyme occurred in two distinct phases (phase I and phase II). During phase I of this reaction, one DOC reacted with the copper center, with retention of the dismutation activity while the second DOC displaced the copper, with a loss of activity in phase II.

• Journal of Environmental Science International
• /
• v.26 no.9
• /
• pp.1013-1021
• /
• 2017

Exposure to Diesel Particulate Matter (DPM) potentially causes adverse health effects (e.g. respiratory symptoms, lung cancer). Due to a lack of data on Elemental Carbon (EC) exposure levels in underground copper ore mining (unlike other underground mining industries such as non-metallic and coal mining), this case study aims to provide individual miners' EC exposure levels, and information on their work practices including use of personal protective equipment. EC measurement was carried out during different work activities (i.e. drilling, driving a loader, plant fitting, plant operation, driving a Specialized Mining Vehicle (SMV)) as per NIOSH Method 5040. The copper miners were working 10 h/day and 5 days/week. This study found that the most significant exposures to EC were reported from driving a loader (range $0.02-0.42mg/m^3$). Even though there were control systems (i.e. water tanks and DPM filters) on the diesel vehicles, around 49.5% of the results were over the adjusted recommendable exposure limit ($0.078mg/m^3$). This was probably due to: (1) driver's frequently getting in and out of the diesel vehicles and opening the windows of the diesel vehicles, and (2) inappropriate maintenance of the diesel vehicles and the DPM control systems. The use of the P2 type respirator provided was less than 19.2%. However, there was no significant difference between the day shift results and the night shift results. In order to prevent or minimize exposure to EC in the copper ore mine, it is recommended that the miners are educated in the need to wear the appropriate respirator provided during their work shifts, and to maintain the diesel engine and emission control systems on a regular basis. Consideration should be given to a specific examination of the diesel vehicles' air-conditioning filters and the air ventilation system to control excessive airborne contaminants in the underground copper mine.

• Journal of the Korean Vacuum Society
• /
• v.6 no.1
• /
• pp.20-27
• /
• 1997

We have investigated the formation techniques of copper thin films which would be useful for sub-quarter-micron integrated circuits. A chemical vapor deposition technology has been tried for the better side wall formation of the thin films, and a metal organic compound, named (hface)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(I)) was used as the precursors. We have deposited the copper thin films on TiN and $SiO_2$substrates. The film resistivity and deposition selectivity have been measured as functions of substrate temperature and chamber pressure. Best electrical properties were obtained at $180^{\circ}C$ of substrate temperature and 0.6 Torr of chamber pressure. Under the optimum deposition conditions, polycrystalline copper structures were observed to be grown, and the deposition rate of 120 nm/min was measured. The electrical resistivity as low as 0.25$mu \Omega$.cm, and the surface roughness of 15.5 nm were also measured. These are the suitable electrical and material properties required in the sub-quarter-micron device fabrication. Also, in the substrate temperature range of 140-$250^{\circ}C$, high deposition selectivity was observed between TiN and $SiO_2$.

• Asian-Australasian Journal of Animal Sciences
• /
• v.24 no.7
• /
• pp.1001-1006
• /
• 2011

To determine the efficiency of copper (Cu) supplementation, a feeding experiment was carried out with 240 day old broiler chicks (vencobb-100). Birds were divided into four dietary treatments: i) C - no additives, ii) $T_1$-75 mg inclusion of Cu/kg diet, iii) $T_2$-150 mg inclusion of Cu/kg diet, iv) $T_3$-250 mg inclusion of Cu/kg diet. The present study was carried out in the Department of Animal Physiology, West Bengal University of Animal and Fishery Sciences, Kolkata, India for a period of 42 days (6 weeks). Growth performance was measured in terms of live weight gain, cumulative feed intake and feed conversion ratio at the end of $21^{st}$ and $42^{nd}$ day of the experiment and the result was found to be encouraging for commercial enterprises when the chickens were fed at 150 mg Cu/kg ($T_2$) of their diet. Excess dietary copper more than 150 mg/kg reduced the haemoglobin (Hb) concentration in blood and resulted in the accumulation of copper in the liver with decreased blood Hb concentration and packed cell volumes (PCV). Copper supplementation increased the total erythrocyte count (TEC) as copper is involved in erythropoiesis. But, from the result it is indicated that the dietary copper concentration could not alter the total leukocyte count (TLC). In case of different leucocytes count (DLC), there were no significant differences observed among the different treated groups. Statistical analysis showed significant (p<0.01) difference in plasma concentration of copper, zinc, ferrous and cholesterol among the different copper treated groups. The result indicates that supplementation of copper is an effective way of improving the production performance and haematological parameters in broiler chicken.

• Korean Journal of Materials Research
• /
• v.9 no.11
• /
• pp.1148-1152
• /
• 1999

An organometallic precursor, hfac(hexafluoroacetylacetonate) Cu(I) DMB (3,3-dimethyl- 1-butene) was synthesized, evaluated and compared with other precursors for metal organic chemical vapor deposition of copper thin films. It was found that at $40^{\circ}C$, the vapor pressure was an order of magnitude higher (about 3 torr) than (hfac) Cu vinyltrimethylsilane (VTMS) and films could be deposited at the substrate temperature of 100-$280^{\circ}C$ with deposition rate substantially higher. The copper films contained no detectable impurities as measured by Auger electron spectroscopy and had a resistivity of about 2.0$\mu\Omega$-cm in the deposition temperature range of 150 to $250^{\circ}C$. From the thermal analysis, (hfac)Cu(I)(DMB) is believed to be quite stable and no appreciable amount of precipitation was observed at $65^{\circ}C$ heating for more than a month.

• Korean Journal of Materials Research
• /
• v.33 no.11
• /
• pp.491-496
• /
• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.275.1-275.1
• /
• 2014

The effects of the interfacial buffer layer and temperature on the organic bulk heterojunction (BHJ) nanostructures of copper phthalocyanine (CuPc) and fullerene (C60) systems were investigated using real time in-situ x-ray scattering. In the CuPc:C60 BHJ structures, standing-on configured ${\gamma}$-CuPc phase was formed by co-deposition of CuPc and C60. Once formed ${\gamma}$-phase was thermally stable during the annealing upon $180^{\circ}C$. Meanwhile, the insertion of CuI buffer layer prior to deposition of the CuPc:C60 BHJ layer induced lying-down configured CuPc crystals in the BHJ layer. The lying CuPc peak intensity and the lattice parameter were increased by the thermal annealing. This increment of the intensity seemed to be related to the strain at the interface between CuPc:C60 and CuI, which was proportional to the enhancement of the power conversion efficiency of the device.

• Economic and Environmental Geology
• /
• v.42 no.1
• /
• pp.1-8
• /
• 2009

The Haman mineralized area is located within the Cretaceous Gyeongsang Basin along the southeastern part of the Korean peninsula. Almost all occurrences in the Haman area are representative of copper-bearing polymetallic hydrothermal vein-type mineralization. Within the area are a number of fissure-filling hydrothermal veins which contain tourmaline, quartz and carbonates with Fe-oxide, base-metal sulfide and sulfosalt minerals. The Gunbuk, Jeilgunbuk and Haman mines are each located on such veins. The ore and gangue mineral paragenesis can be divided into three distinct stages: Stage I, tourmaline + quartz + Fe-Cu ore mineralization; Stage II, quartz + sulfides + sulfosalts + carbonates; Stage III, barren calcite. Equilibrium thermodynamic data combined with mineral paragenesis indicate that copper minerals precipitated mainly within a temperature range of $350^{\circ}C$ to $250^{\circ}C$. During early mineralization at $350^{\circ}C$, significant amounts of copper ($10^3$ to $10^2\;ppm$) could be dissolved in weakly acid NaCl solutions. For late mineralization at $250^{\circ}C$, about $10^0$ to $10^{-1}\;ppm$ copper could be dissolved. Equilibrium thermodynamic interpretation indicates that the copper in the Haman-Gunbuk systems could have been transported as a chloride complex and the copper precipitation occurred as a result of cooling accompanied by changes in the geochemical environments ($fs_2$, $fo_2$, pH, etc.) resulting in decrease of solubility of copper chloride complexes.