• Journal of Radiopharmaceuticals and Molecular Probes
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• v.1 no.1
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• pp.1-8
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• 2015

It is essential use of long term half life radioisotopes for positron emission tomography (PET) imaging study of biopharmaceuticals because most of biopharmaceuticals have long biological half-life. Some representative isotopes are $^{124}I$, $^{64}Cu$, $^{89}Zr$ and so on. These PET radioisotopes and their radiopharmaceuticals have recently received growing interest because of long half life and good imaging properties. Furthermore, $^{64}Cu$ and $^{89}Zr$ can be used in a number of radiopharmaceuticals due to its ease of conjugation to peptides and antibodies using the proper chelator. In recent years, since $^{124}I$ was first developed in 2005, we have been studied to develop an efficient method and procedure for producing these radioisotopes, and we have made considerable progress in production of long term half life radioisotopes. This review introduces the general production system, purification procedure, and several advances on targeting method for $^{124}I$ and $^{64}Cu$ in KIRAMS.

• Progress in Superconductivity and Cryogenics
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• v.22 no.4
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• pp.14-19
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• 2020

Here we present the comparative experimental study of the stability of the superconducting state in 4 mm YBCO tapes with copper lamination against local heat disturbances at 77 K. The samples are either directly cooled by immersing a bare YBCO tape into a liquid nitrogen pool or operate in nearly-adiabatic conditions when the tape is covered by a 0.6 mm layer of Kapton insulation. Main quench characteristics, i.e. minimum quench energies (MQEs) and normal zone propagation (NZP) velocities for both samples are measured and compared. Minimum NZP currents are determined by a low ohmic resistor technique eligible for obtaining V - I curves with a negative differential resistance. The region of transport currents satisfying the stationary stability criterion is found for the different cooling conditions. Finally, we use the critical temperature margin as a universal scaling parameter to compare the MQEs obtained in this work for YBCO tapes at 77 K with those taken from literature for low-temperature superconductors in vacuum at 4.2 K, as well as for MgB2 wires cooled with a cryocooler down to 20 K.

• Economic and Environmental Geology
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• v.17 no.1
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• pp.17-34
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• 1984

The Ordovician limestone and dolomite was mineralized by the intrusion of quartz porphyry to form hydrothermal ore deposit along the fault shear zone, which trends $N30^{\circ}-40^{\circ}W$ dipping $60^{\circ}-70^{\circ}SW$. The primary manganese carbonates in the upper part of the deposit were oxidized to form supergene manganese ore deposits. The quartz porphyry is plotted mainly in granite region of the triangular diagram of normative composition. The granite phase contains more copper and lead, but less zinc, nickel and chromium than the granodiorite phase which occupies the northwestern part of the quartz porphyry. The content of copper, lead, zinc, nickel and chromium in the quartz porphyry is lower compared with the granitic rocks from the copper province in the Gyeongsang basin. But the granitic rocks from the lead-zinc province has lower content of copper and nickel than the quartz porphyry. The primary distribution pattern of trace elements in the country rock of limestone and dolomite has close relation with the hydrothermal mineralization, showing anomalous or high content near the fault shear zone. The secondary distribution pattern of trace elements in soils shows close relation with the solubility of the carbonates of the elements under weathering condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Journal of Animal Science and Technology
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• v.45 no.1
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• pp.49-56
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• 2003

An experiment was conducted to study the effects of the dietary Cu sources on the performance of the weanling pigs. Forty-eight, 24 in each sex, 4 weeks old pigs were assigned to four treatments; control, methionine-Cu chelate, chitosan-Cu chelate or yeast-Cu chelate. Control diet contained 136ppm Cu to which additional 100ppm Cu in different chelated form was added to the respective treatment. Individual pig weight and feed intake of each pen were recorded weekly for 5 weeks. Average daily feed intakes(ADFI), average daily gains(ADG) and ADFI/ADG were not significantly different among treatments. Nutrient availability was not also significantly affected by treatments. Serum triglyceride concentration of chitosan-Cu treatment was significantly lower than those of methionine-Cu and yeast-Cu treatments but was not significantly different from that of the control. Serum cholesterol concentration of yeast-Cu was significantly lower than those of the control and methionine-Cu but was not significantly different from that of chitosan-Cu treatment. Serum HDL-cholesterol concentration was not significantly affected by treatments. Serum IgG concentrations of all copper treatments were significantly lower than that of the control. It was concluded that Cu-chelates supplemented to the basal diet (136ppm Cu) by the level of 100ppm Cu did not significantly affect growth performance of weaning pigs. However, serum parameters of cholesterol, cholesterol and IgG were significantly affected by the treatments.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.219-223
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• 2000

All-solid state lithium rechargeable thin film batteries were fabricated with the configuration of$Cu_{0.5}V_2O_5/Lipon/Li$ using sequential thin film techniques. Copper vanadium oxide thin films and Lipon thin films were prepared by DC reactive dual source magnetron sputtering and RF magnetron sputtering, respectively. According to XRD analysis, we found out that copper vanadium oxide thin films were amorphous. The electrochemical behaviour of them was examined in half cell system using EC : DMC(1:1 in IM $LiPF_5$) liquid electrolyte. The ionic conductivity of Lipon thin film was $1.02\times10^{-6}S/cm$ at $25^{\circ}C$ and $Cu_{0.5}V_2O_5/Lipon/Li$ cell showed that the discharge capacity was about $50{\mu}Ah/cm^2{\mu}m$ beyond 500cyc1es.

• Journal of the Korean Society of Food Science and Nutrition
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• v.18 no.4
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• pp.375-388
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• 1989

The study was designed to examine the of effects of level of protein intake on Cu metabolism in 6 healthy young adult women. The subjects were given 4 levels of protein diet, 0.45g (period I), 0.60g (period III), 0.75g (period II) and 0.90g (period IV) of protein per Kg of body weight and 0.86mg 0.70mg, 1.86mg and 2.34mg of Cu per day for 5 days respectively. During the experimental period, urine sample were collected everyday and fecal sample were collected for last 2 days of each dietary period. The samples were analyzed for Cu contents. Mean daily urinary Cu excretion were $0.12{\pm}0.03mg$ for period I, $0.16{\pm}0.02mg$ for period III, $0.35{\pm}0.08mg$ for period II and $0.11{\pm}0.02mg$ for period IV, and the mean daily urinary excretion of Cu was not affected significant difference by the level of protein intake. Mean daily fecal Cu excretion were $0.12{\pm}0.03mg$ for period I, $0.16{\pm}0.02mg$ for period III, $0.35{\pm}0.08mg$ for period II and $0.11{\pm}0.02mg$ for period IV, and the mean daily urinary excretion of Cu was not affected significant difference by the level of protein intake. Mean dailey Mean dailey fecal Cu excretion were $1.23{\pm}0.16mg$ for period I, $1.28{\pm}0.25mg$ for period III, $0.99{\pm}0.01mg$ for period II and $1.85{\pm}0.19mg$ for period IV, and the difference of the 2 periods I vs IV was significant(p<0.05). Mean dailey cu balance were $0.48{\pm}0.14mg$ for period I, $0.74{\pm}0.26mg$ for period III, $0.52{\pm}0.12mg$ for period II and $0.38{\pm}0.20mg$ for period IV, and the difference of the 2 periods I vs IV was significant(p<0.05).

• Food Science of Animal Resources
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• v.27 no.3
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• pp.284-289
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• 2007

This study was conducted to investigate the effects of copper and zinc supplementation on growth performance, nutrient digestibility, and meat and carcass characteristics in finishing pigs. A total of 72 $(Landrace{\times}Yorkshire{\times}Duroc)$ pigs (58.47 kg initial BW) were assigned to 6 treatments in a $2{\times}3$ factorial design $(Zn\;levels{\times}Cu\;levels)$. The sources of zinc and copper were Zn-methionine chelate and Cu-methionine chelate, respectively. Zinc levels used were 80 and 120 ppm and copper levels used were 10, 30 and 60 ppm. Throughout the entire experimental period, the average daily gain (ADG) and average daily feed intake (ADFI) were not significantly affected by Cu or Zn levels, or their relative levels. The G:F ratio was significantly affected by the relative levels of Cu and Zn (p<0.05), specifically at 30 ppm Cu and 120 ppm Zn. Dry matter digestibility was significantly affected by the levels of Cu (p<0.02), Zn (p<0.01) and the relative levels of each (p<0.04), in particular at 30 ppm Cu and 120 ppm Zn. Nitrogen digestibility was significantly affected by Zn levels (p<0.01) and the combination of 30 ppm Cu and 120 ppm Zn (p<0.03). The $L^*-value$, shear force, cooking loss and pH were not significantly affected by Cu levels, Zn levels or their combination. The $a^*- (p<0.04)\;and\;b^*- values (p<0.01)$ were significantly affected by Zn levels at 80 ppm. The Water hoding capacity was significantly affected by Cu and Zn in combination (p<0.01) at 10 ppm Cu and 120ppm Zn. The carcass weight, backfat thickness and carcass grade were not significantly affected by Cu levels, Zn levels or their relative levels. The carcass percentage was significantly affected by the combination (p<0.04) of 30ppm Cu and 120ppm Zn. In conclusion, dietary supplementation of Cu and Zn at 30 and 120 ppm, respectively, is effective for feed efficiency, nutrient digestibility and carcass percentage, while at the levels of Cu at 10 ppm and Zn at 120 ppm have effects on WHC.

• Food Science of Animal Resources
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• v.28 no.1
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• pp.27-31
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• 2008

This study investigated the effects of copper and zinc sources on growth performance, nutrient digestibility, carcass traits and meat characteristics in finishing pigs. Dietary treatments included 1) inorganic copper ($CuSO_4{\cdot}5H_2O$ 30ppm), 2) organic copper (Cu-methionine, 30 ppm), 3) inorganic zinc (ZnO, 80 ppm) and 4) organic zinc (Zn-methionine, 80 ppm). ZnO treatment improved the ADFI (average daily feed intake) compared to Cu-met and Zn-met treatments (p<0.05) during 5 weeks of treatment. However, during the entire experimental period, the ADG (average daily gain), ADFI and F:G ratio (feed conversion ratio) were not significantly different among the treatments (p>0.05). DM and N digestibility were not significantly different among the treatments after 5 weeks (p>0.05). At the end of the experiment, DM and N digestibility were decreased with Zn-met treatment relative to the other three treatments. The pH value of meat from $CuSO_4$ treated pigs was greater than Zn-met and ZnO treated pigs (p<0.05). Sensory evaluation was carried out for randomly selected (n = 16) paired loin samples. Meat color levels were increased (p<0.05) with Cu treatments compared to Zn treatments. $CuSO_4$ decreased the marbling of meat relative to the other treatments (p<0.05). The firmness was greater with ZnO treatment compared to Cu-met and ZnO treatments (p<0.05). These results indicate that inorganic Zn can improve growth performance, however, inorganic Cu and Zn are as effective as organic Cu and Zn at improving nutrient digestibility, carcass traits and meat quality. This form of organic additive can be friendlier to the environment than inorganic supplements.