• Title/Summary/Keyword: Coplanar-waveguide

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Fabrication of Thick Silicon Dioxide Air-Bridge and Coplanar Waveguide for RF Application Using Complex Oxidation Process and MEMS Technology (복합 산화법과 MEMS 기술을 이용한 RF용 두꺼운 산화막 에어 브리지 및 공면 전송선의 제조)

  • Kim, Kook-Jin;Park, Jeong-Yong;Lee, Dong-In;Lee, Bong-Hee;Bae, Yong-Hok;Lee, Jong-Hyun;Park, Se-Il
    • Journal of Sensor Science and Technology
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    • v.11 no.3
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    • pp.163-170
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    • 2002
  • This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

Fabrication and Characteristics of z-cut Ti:LiNbO$_3$ Internal Chip for Optical Modulator (z-cut $Ti:LiNbO_3$광변조기 내부칩 제작 및 특성평가)

  • Kim, Seong-Ku;Yoon, Hyung-Do;Lee, Han-Young;Park, Gye-Choon;Lee, Jin;Kang, Sung-Jun
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.319-322
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    • 1999
  • In this paper, we report characteristics of a internal chip of LiNbO$_3$ modulator with low-driving-voltage at 150nm wavelength. A Ti diffusion method for LiNbO$_3$ optical waveguide and a buffer layer for improving phase velocity mismatch between optical and microwave waves were employed. The traveling-wave coplanar waveguide electrode of 35mm is used for reducing the driving voltage. From this work, wideband modulation of 10㎓ and low-driving voltage of 3.9volts are realized.

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Fabrication and characteristics of 10Gbps optical modulator for high speed optical communication (초고속 광통신용 10Gbps급 광변조기 제작 및 특성)

  • Yoon, Hyung-Do;Kim, Seong-Ku;Hyu, Hyun;Yoon, Dae-Won
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.2
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    • pp.110-117
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    • 1998
  • An optical modulator with CPW(coplanar waveguide) electode on Ti:LiNbO$_{3}$ optical waveguide wasfabricated and characterized. The electrical-optical bandwidth measurement showed an optical response of -3dBat 10 GHzand S$_{11}$ lessthan -10dB upto 20GHz. The typeical specifications are : 5.6V of driving voltage, 4.2dB of insertion loss and 30dB of on/off extinction. The eye pattern proved that the optical meduator, fabricated in this work, has properties good enough for application.

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Suppression of leakage and crosstalk in millimeter-wave flip-chip packages (밀리미터파 플립 칩 실장구조에서의 누설파와 간섭효과 억제방법)

  • 이계안;이해영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.4
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    • pp.40-46
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    • 1998
  • Leakage phenomena of flip-chip structures on common GaAs and alumina main substrates are characterized using the spectral domain approach to reduce the possible chip-to-chip crosstald and transmission resonance. We have found taht the longitudinal section magnetic mode is dominant for the coplanar waveguide leakage andthe leakage can be suppreassed by properly managing the gap height and the main substrate thickness in addition to the dielectric constant. These calculation results will be helpful for designing and flip-chip packagaing of high-frequency integrated circuits.

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Fabrication and Properties of CPW Electrode for Optical Modulator (광변조기용 CPW 전극제작 및 특성)

  • 임영삼;김영준;박계춘
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.962-965
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    • 1999
  • We designed and fabricated a travelingwave CPW(coplanar waveguide) electrode for LiNbO$_3$ optical modulator. To Investigate the variation of microwave refractive index of these electrodes, we prepared the CPW electrode samples as a function of electrode thickness and measured the TDR and S-parameter. From this results, we could know the electrode conditions of index matching to 2.20 for 1550nm optical wave index for applying LiNbO$_3$ optical modulator and described. Also, we discussed the some properties of CPW electrode for applying LiNbO$_3$ optical modulator.

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A Size-Reduced CPW Balun with the Wilkinson Divider Structure Using a Crossing Structure (신호-접지 교차구조를 이용한 소형화된 CPW 월킨슨 분배기 구조의 발룬)

  • Lim Jong-Sik;Yang Hoe-Sung;Kim Dong-Joo;Jeong Yong-Chae;Ahn Dal;Kim Kwang-Soo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.8 s.99
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    • pp.835-841
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    • 2005
  • In this paper, a novel sized-reduced CPW(Coplanar Waveguide) balun is proposed. It has a crossing structure between signal line and ground planes of CPW transmission line for the $180^{\circ}$ phase inversion. The$3{\lambda}/4$ CPW transmission line is reduced to ${\lambda}/4$ in physical length while the electrical length is preserved to $270^{\circ}$ by the $180^{\circ}$ phase inverting structure, while the previous balun by Lim et at. has a long $3{\lambda}/4$ transmission section to from the Wilkinson divider structure having out of phase between output ports. In addition, the measured data which show the crossing structure has the wanted $180^{\circ}$ phase change is presented in this work.

Ka-band Power Amplifiers for Short-range Wireless Communication in $0.18-{\mu}m$ CMOS Process ($0.18-{\mu}m$ CMOS공정을 이용한 Ka 대역 근거리 무선통신용 전력증폭기 설계)

  • He, Sang-Moo;Lee, Jong-Wook
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.4
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    • pp.131-136
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    • 2008
  • Two Ka-band 3-stage power amplifiers were designed and fabricated using $0.18-{\mu}m$ CMOS technology. For low loss matching networks for the amplifiers, two substrate-shielded transmission line structures, having good modeling accuracy up to 40 GHz were used. The measured insertion loss of substrate-shielded microstrip-line (MSL) was 0.5 dB/mm at 27 GHz. A 3-stage CMOS amplifier using substrate-shielded MSL achieved a 14.7-dB small-signal gain and a 14.5-dBm output power at 27 GHz in a compact chip area of 0.83$mm^2$. The measured insertion loss of substrate-shielded coplanar waveguide (CPW) was 1.0 dB/mm at 27 GHz. A 3-stage amplifier using substrate-shielded CPW achieved a 12-dB small-signal gai and a 12.5-dBm output power at 26.5 GHz. This results shows a potential of CMOS technology for low cost short-range wireless communication components and system.

Design of Broadband CPW-Fed Square Slot Antennas (CPW 급전 광대역 사각 슬롯 안테나 설계)

  • Choi, Soon-Shin;Kim, Joon-Il;Jee, Yong
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.42 no.11
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    • pp.107-115
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    • 2005
  • This paper presents the structure of a broadband coplanar waveguide(CPW) fed square slot antenna with a impedance bandwidth tuning patch. The designing method of the antenna suggests that two resonant frequencies are excited as a dual-frequency dipole antenna following the dimensions of the square slot. In other words, the lower resonant frequency mainly depends on the slot width and the higher one its length. A CPW fed square slot antenna with a impedance tuning patch was measured to $20GHz^\~33GHz$, $50\%$, VSWR=2 impedance bandwidth by adjusting the dimensions of the tuning patch when the slot length had $70\%$ of its width. This result shows that a medical CPW fed antenna is easily implemented with a simple square slot structure including a bandwidth tuning patch in the center.

Design and Implementation of VCO for Doppler Radar System (도플러 레이더 시스템용 VCO 설계 및 제작)

  • Kim Yong-Hwan;Kim Hyun-Jin;Min Jun-Ki;Yoo Hyung-Soo;Lee Hyung-Kyu;Hong Ui-Seok
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.4 no.2 s.7
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    • pp.81-87
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    • 2005
  • In this paper, a VCDRO(Voltage Control Dielectirc Resonator Oscillator) for signal source of doppler radar system is designed and fabricated. The proposed VCDRO is made with new tuning mechanism using CPW line. The coplanar waveguide of $\lambda_{g}$/2 in length with varactor diode is placed on the metallization side under the dielectric resonator and coupled to it. Tuning varactor diode is mounted at one end of the CPW. The proposed circuit tuned by a CPW allows one more varactor diode to be mounted on the optimized CPW, where a greater sensitivity of frequency tuning is needed. With varying the biasing voltage for the varactor diode from 0 V to 15 V, output frequency tuning of 12 MHz is obtained. The PLDRO exhibits output power of 16.5 dBm with phase noise in the phase locked state characteristic of -115 dBc/Hz at 100 Hz, -105 dBc/Hz at the 10 kHz, and -102 dBc/Hz at 1 Hz offset from 10.525 GHz , respectively.

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