Fabrication and Characteristics of z-cut Ti:LiNbO$_3$ Internal Chip for Optical Modulator

z-cut $Ti:LiNbO_3$광변조기 내부칩 제작 및 특성평가

  • 김성구 (전자부품연구원 통신부품연구센터) ;
  • 윤형도 (전자부품연구원 통신부품연구센터) ;
  • 이한영 (전자부품연구원 통신부품연구센터) ;
  • 박계춘 (목포대학교 공과대학) ;
  • 이진 (목포대학교 공과대학) ;
  • 강성준 (목포대학교 공과대학)
  • Published : 1999.06.01

Abstract

In this paper, we report characteristics of a internal chip of LiNbO$_3$ modulator with low-driving-voltage at 150nm wavelength. A Ti diffusion method for LiNbO$_3$ optical waveguide and a buffer layer for improving phase velocity mismatch between optical and microwave waves were employed. The traveling-wave coplanar waveguide electrode of 35mm is used for reducing the driving voltage. From this work, wideband modulation of 10㎓ and low-driving voltage of 3.9volts are realized.

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