• The Transactions of the Korean Institute of Electrical Engineers D
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• v.50 no.2
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• pp.87-92
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• 2001

This paper proposes a new content-addressable memory implemented with an analog array which has linear writing and erasing characteristics. The size of the array in this memory is $2{\times}2$, which is a reasonable structure for checking the disturbance of the unselected cells during programming. An intermediate voltage, Vmid, is used for preventing the interference during programming. The operation for reading in the memory is executed with an absolute differencing circuit and a winner-take-all (WTA) circuit suitable for a nearest-match function of a content-addressable memory. We simulate the function of the mechanism by means of Hspice with 1.2${\mu}m$ double poly CMOS parameters of MOSIS fabrication process.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.458-464
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• 2017

A magnetic tunnel junction (MTJ) based ternary content addressable memory (TCAM) is proposed which provides non-volatility. A unit cell of the TCAM has two MTJ's and 4.875 transistors, which allows the realization of TCAM in a small area. The equivalent resistance of parallel connected multiple unit cells is compared with the equivalent resistance of parallel connected multiple reference resistance, which provides the averaging effect of the variations of device characteristics. This averaging effect renders the proposed TCAM to be variation-tolerant. Using 65-nm CMOS model parameters, the operation of the proposed TCAM has been evaluated including the Monte-Carlo simulated variations of the device characteristics, the supply voltage variation, and the temperature variation. With the tunneling magnetoresistance ratio (TMR) of 1.5 and all the variations being included, the error probability of the search operation is found to be smaller than 0.033-%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39B no.7
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• pp.433-439
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• 2014

This paper proposes an architecture of two-stage string matching engine with content-addressable memory(CAM) and parallel bit-split string matchers for deep packet inspection(DPI). Each long signature is divided into subpatterns with the same length, where subpatterns are mapped onto the CAM in the first stage. The long pattern is matched in the second stage using the sequence of the matching indexes from the CAM. By adopting CAM and bit-split string matchers, the memory requirements can be greatly reduced in the heterogeneous string matching environments.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.8
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• pp.1-9
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• 1998

A new parallel test algorithm and a built-in self test (BIST) architecture are developed to test various types of functional faults efficiently in content addressable memories (CAMs). In test mode, the read oepratin is replaced by one parallel content addressable search operation and the writing operating is performed parallely with small peripheral circuit modificatins. The results whow that an efficient and practical testing with very low complexity and area overhead can be achieved.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.2 s.344
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• pp.51-59
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• 2006

Von Neumann architecture suffers from the interface between the central processing unit and the memory, which is called 'Von Neumann bottleneck' In this paper, we propose a scalable general-purpose associative processor (AP) based on content-addressable memory (CAM) which solves this problem and is suitable for the search-oriented applications. We propose an efficient instruction set and a structural scalability to extend for larger applications. We define twelve instructions and provide some reduced instructions to speed up which execute two instructions in a single instruction cycle. The proposed AP performs in a bit-serial, word-parallel fashion and can be considered as a 32-bit general-purpose parallel processor with a massively parallel SIMD structure. We design and simulate a maximum/minumum search greater-than/less-than search, and parallel addition to verify the proposed architecture. The algorithms are executed in a constant time O(k) regardless of the number of input data.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.1
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• pp.105-111
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• 2013

We have developed an analog associative memory implemented with an analog array which has linear writing and erasing characteristics. The associative memory adopts a winner-take-all strategy. The operation for reading in the memory is executed with an absolute differencing circuit and a winner-take-all (WTA) circuit suitable for a nearest-match function of a content-addressable memory. We also present a system architecture that enables highly-paralleled fast writing and quick readout as well as high integration density. A multiple memory cell configuration is also presented for achieving higher integration density, quick readout, and fast writing. The system technology presented here is ideal for a real time recognition system. We simulate the function of the mechanism by menas of Hspice with $1.2{\mu}$ double poly CMOS parameters of MOSIS fabrication process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.2
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• pp.145-154
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• 1991

In this dissertation, the same reading and writing operation of general SRAM, the algonthm and hardware of 8 bit $\times$16 word CAM(Content Addressable Memory) which carry out the parallel that search is presented. The designed CAM chip consists of five functional blocks (CAM cell array, Address Deceden, Address Encoden. Data Selector, Sense Amplifier). The smulation is performed using logic smmulator on Apollo workstation and PSPICE eitcut simulation on PC/AT. The designed CAM was fabricated by 3um CMOS N Well process (ETRI) design nitles and testing was performed.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.1
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• pp.46-56
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• 1991

In this paper, 16word X 8bit Content Addressable and Reentrant Memory(CARM) is described. This device has 4 operation modes(read, write, match, reentrant). The read and write operation of CARM is like that of static RAM, CARM has the reentrant mode operation where the on chip garbage collection is accomplished conditionally. Thus function can be used for high speed matching unit of dynamic data flow computer. And CARM also can encode matching address sequentially according to therir priority. CARM consists of 8 blocks(CAM cell, Sequential Address Encoder(S.A.E). Reentrant operation. Read/Write control circuit, Data/Mask Register, Sense Amplifier, Encoder. Decoder). Designed DARM can be used in data flow computer, pattern, inspection, table look-up, image processing. The simulation is performed using the QUICKSIM logic simulator and Pspice circuit simulator. Having hierarchical structure, the layout was done using the 3{\;}\mu\textrm{m} n well CMOS technology of the ETRI design rule.

• Journal of Korea Society of Industrial Information Systems
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• v.18 no.5
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• pp.19-23
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• 2013

This paper deals with the analysis of 6T SRAM cell stability for Hi-speed processing Ternary Content Addressable Memory. The higher the operation frequency, the smaller CMOS technology required in the designed TCAM because the purpose of TCAM is high-speed data processing. Decrease of Supply voltage is one cause of unstable TCAM operation. Thus, We should design TCAM through analysis of SRAM cell stability. In this paper we propose methodology to characterize the Static Noise Margin of 6T SRAM. All simulations of the TCAM have been carried out in 180nm CMOS process technology.

• The Journal of the Acoustical Society of Korea
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• v.15 no.6
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• pp.16-25
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• 1996

In this paper, we designed the chip which can classify the Korean characters using CAM(Content Addressable Memory). A high-speed OCR has been implemented by software to recognize the characters. However, it is difficult to process in real-time. The pipelined hardware implementation is one of the solution to recognize the characters in real-time by using the parallel processing techniques. We used the CAM which has the function of high-speed parallel-match to implement easily and twenty reference patterns are used for comparison. The chip has been evaluated result using DLAB of DAZIX. The simulation results have shown that the process speed was $1.6{\mu}s$ per character. Also, we programed using C-language and compared the results.