Journal of Korea Society of Industrial Information Systems (한국산업정보학회논문지)

Korea Society of Industrial Information Systems (한국산업정보학회)
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High Speed TCAM Design using SRAM Cell Stability

SRAM 셀 안정성 분석을 이용한 고속 데이터 처리용 TCAM(Ternary Content Addressable Memory) 설계

  • 안은혜 (경북대학교 전자공학과) ;
  • 최준림 (경북대학교 전자공학과)
  • Received : 2013.08.28
  • Accepted : 2013.10.08
  • Published : 2013.10.31
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Abstract

This paper deals with the analysis of 6T SRAM cell stability for Hi-speed processing Ternary Content Addressable Memory. The higher the operation frequency, the smaller CMOS technology required in the designed TCAM because the purpose of TCAM is high-speed data processing. Decrease of Supply voltage is one cause of unstable TCAM operation. Thus, We should design TCAM through analysis of SRAM cell stability. In this paper we propose methodology to characterize the Static Noise Margin of 6T SRAM. All simulations of the TCAM have been carried out in 180nm CMOS process technology.

본 논문에서는 고속 데이터 처리용 TCAM(Ternary Content Addressable Memory) 설계를 위하여 6T SRAM cell의 안정성 분석 방법에 대해 기술하였다. TCAM은 고속 데이터 처리를 목적으로 하기 때문에 동작 주파수가 높아질수록 필요 시 되는 CMOS 공정의 단위가 작아지게 된다. 공급 전압의 감소는 TCAM 동작에 불안정한 영향을 줄 수 있으므로 SRAM cell 안정성 분석을 통한 TCAM 설계가 필수적이다. 우리는 6T SRAM의 정적 노이즈 마진(SNM)을 측정하여 분석하였고, TCAM의 모든 시뮬레이션은 $0.18{\mu}m$ CMOS 공정을 사용하여 확인하였다.

Keywords

References

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