• 제목/요약/키워드: Contact materials

검색결과 2,920건 처리시간 0.022초

The contact problem of the functionally graded layer resting on rigid foundation pressed via rigid punch

  • Yaylaci, Murat;Abanoz, Merve;Yaylaci, Ecren Uzun;Olmez, Hasan;Sekban, Dursun Murat;Birinci, Ahmet
    • Steel and Composite Structures
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    • 제43권5호
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    • pp.661-672
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    • 2022
  • The solution of contact problems is extremely important as we encounter many situations involving such problems in our daily lives. One of the most important parameters effective in solving contact problems is the materials of the parts in contact. While it is relatively easy to solve the contact mechanics of the systems created with traditional materials with a homogeneous microstructure and mechanical distribution, it may be more difficult to solve the contact problem of new generation materials that do not show a homogeneous distribution. As a result of this situation, it is seen that studies on contact problems of materials that do not exhibit such a homogeneous internal structure and mechanical properties are extremely limited in the literature. In this context, in this study, analytical and numerical analyzes of a contact problem created using functionally graded materials were carried out and the results were evaluated mutually. It has been decided that the contact areas and contact pressures acquired from numerical method are reasonably appropriate with the results obtained from the analytical method.

Analysis of material dependency in an elastic - plastic contact models using contact mechanics approach

  • Gandhi, V.C. Sathish;Kumaravelan, R.;Ramesh, S.;Sriram, K.
    • Structural Engineering and Mechanics
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    • 제53권5호
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    • pp.1051-1066
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    • 2015
  • The study aims on the effect of material dependency in elastic- plastic contact models by contact analysis of sphere and flat contact model and wheel rail contact model by considering the material properties without friction. The various materials are selected for the analysis based on Young's modulus and yield strength ratio (E/Y). The simulation software 'ANSYS' is employed for this study. The sphere and flat contact model is considered as a flattening model, the stress and strain for different materials are estimated. The simulation of wheel-rail contact model is also performed and the results are compared with the flattening model. The comparative study has also been extended for finding out the mean contact pressure for different materials the E/Y values between 150 and 660. The results show that the elastic-plastic contact analysis for materials up to E/Y=296.6 is depend on the nature of material properties and also for this material the mean contact pressure to yield strength reaches 2.65.

Electrical Contact Characteristics of Ag-SnO2 Materials with Increased SnO2 Content

  • Chen, Pengyu;Liu, Wei;Wang, Yaping
    • Journal of Electrical Engineering and Technology
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    • 제12권6호
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    • pp.2348-2352
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    • 2017
  • The electrical contact characteristics including temperature rise, contact resistance and arc erosion rate of the $Ag-SnO_2$ materials with increased $SnO_2$ content were investigated during the repeated make-and-break operations. The thickness of arcing melting layer reduces by half and the arc erosion rate decreases more than 70% under 10000 times operations at AC 10 A with the $SnO_2$ content increasing from 15 wt.% to 45 wt.%, on one hand, temperature rise and contact resistance increase obviously but could be reduced to the same order of conventional $Ag-SnO_2$ materials by increasing the contact force. The microstructure evolution and the effect of $SnO_2$ on the arc erosion, contact resistance were analyzed.

A finite element algorithm for contact problems with friction

  • Liu, C.H.;Hofstetter, G.;Mang, H.A.
    • Structural Engineering and Mechanics
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    • 제3권3호
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    • pp.289-297
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    • 1995
  • A finite element algorithm for consideration of contact constraints is presented. It is characterized by introducing the geometric constraints, resulting from contact conditions, directly into the algebraic system of equations for the incremental displacements of an incremental iterative solution procedure. The usefulness of the proposed algorithm for efficient solutions of contact problems involving large displacements and large strains is demonstrated in the numerical investigation.

친환경 Ag-SnO2 전기접점재료의 분말야금 공정 최적화 (Process Optimization of Environment-Friendly Ag-SnO2 Electric Contact Materials through a Powder Metallurgy)

  • 김정곤
    • 한국분말재료학회지
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    • 제14권5호
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    • pp.327-332
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    • 2007
  • In a view point of environment, the advanced electric contact material without environmental load element such as cadmium has to be developed. Extensive studies have been carried out on $Ag-SnO_2$ electric contact material as a substitute of Ag-CdO contact materials. In the present study, powder metallurgy including compaction and sintering is introduced to solve the incomplete oxidation problems in manufacturing process of $Ag-SnO_2$ electrical contact material. The $Ag-SnO_2$ contact material, fabricated in this study, was actually set in an electric switchgear of which working voltage is 462V and current is between 25 and 40A, for the purpose of testing its performance. As a result, it exceeded the existing Ag-CdO contact materials in terminal-temperature ascent and main contact resistance.

연속접촉재 역사이폰 만곡수로 시스템의 수질개선 (Water Quality Improvement Using Inverted Siphon Curved Channel System of Serial Contact Materials)

  • 이종석;이승영
    • 대한토목학회논문집
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    • 제31권6B호
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    • pp.541-550
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    • 2011
  • 본 연구는 자갈접촉 산화공법의 단점을 연속접촉재 자유월류형 역사이폰 만곡수로시스템으로 보완함으로써 하천수질의 개선효과를 증대시키기 위한 것이다. 이 시스템은 접촉시간의 확장으로 시설규모를 축소시키고, 접촉재의 필터화를 통해 공극의 폐쇄 시 교체가 용이하도록 개선하였다. 또한 이 시스템은 단일 접촉재 사용으로부터 혼합 연속 접촉재를 사용할 수 있도록 개량된 수질개선 공법으로 개발되었다. 개발된 시스템은 대전광역시 소재 지방하천인 탄동천 일부구간에 설치하여 현장실험으로 수질개선효과를 확인하였다. 몇 차례의 현장실험을 통한 수질개선효과 검증결과는 하천수질의 생활환경기준 검사항목으로 SS, BOD, 총대장균수의 수질 개선효과는 55~83% 감소율을 보여 국내 하천수질 정화시설의 목표치인 60~75%를 상회하는 양호한 것으로 확인되었다.

수종 치과용 석고의 접촉각 및 젖음성에 관한 비교 연구 (A STUDY ON THE CONTACT ANGLE AND WETTABILITY OF THE DENTAL STONES)

  • 조리라;정경호;김경남
    • 대한치과보철학회지
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    • 제41권1호
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    • pp.61-70
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    • 2003
  • The purpose of this study was to investigate the contact angles and wettability of conventional dental stones and improved dental stones and newly developed dental stones on several impression materials. Materials included in this study were several dental stones and newly developed dental stone ; 2 type III stones (Snow Rock, New Diastone), 6 type IV stones(Crystal Rock, Vel Mix, Fuji Rock, Tuff Rock, Resin Rock and newly developed dental stone) and 1 type V stone (Die Keen). Contact angles on the impression materials were measured with contact angle measuring device. Ten specimens for each material, total 180 specimens were made on void entrapment model. The two impression materials (Handae, GC) were used to produce 9 groups of die stone casts form void entrapment model. Voids in the stone casts were counted under a stereoscopic microscope. The grad for the reproduction ability of each materials on the void entrapment model was calculated from the casts by one examiner. From the experiment, the following results were obtained : 1. The newly developed stones showed smallest contact angle. Type III dental stone had larger contact angles than type IV and V stones. Contact angle was much affected by the impression materials. 2. Resin containing die materials such as Tuff Rock and Resin Rock had smallest void number than any other groups. 3. In comparing reproduction parameters, Tuff Rock and Resin Rock presented superior results, while Vel Mix showed lowest reproduction ability.

Cu-Sn 머쉬룸 범프를 이용한 플립칩 접속부의 접속저항과 열 싸이클링 신뢰성 (Contact Resistance and Thermal Cycling Reliability of the Flip-Chip Joints Processed with Cu-Sn Mushroom Bumps)

  • 임수겸;최진원;김영호;오태성
    • 대한금속재료학회지
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    • 제46권9호
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    • pp.585-592
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    • 2008
  • Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.

질화물 박막을 이용한 단결정 $\beta$-SiC의 고온 ohmic 접촉 연구 (High Temperature Ohmic Contacts to Monocrystalline $\beta$-SiC Thin Film Using Nitride Thin Films)

  • 최연식;나훈주;정재경;김형준
    • 한국재료학회지
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    • 제10권1호
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    • pp.21-28
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    • 2000
  • 내열금속인 W, Ti와 이들의 질화물인 $W_2$N, TiN 박막을 이용하여 탄화규소 ohmic 접촉을 연구하였다. 열처리 온도에 따른 고온 안정성과 전기적 특성 및 상호 확산 억제 특성을 고찰함으로써 이들 질화물의 고온에서 안정한 ohmic 접촉으로 이용가능성을 조사하였다. 새로운 유기화합물 원료인 bis-trimethylsilylmethane을 이용하여 화학기상 증착법으로 증착한 단결정 $\beta$-SiC 박막과 W이 가장 낮은 접촉 비저항, 2.17$\times$10(sup)-5Ω$\textrm{cm}^2$를 보였으며, Ti 계열은 상대적으로 높은 접촉 비저항 값을 나타내었다. 이들 전극 위에 산화 방지막으로 Pt 박막을 증착함으로써 전극의 산화를 막을 수 있었으며, 질화물 전극은 고온에서 금속접촉에 비해 안정한 전기적 특성을 나타내었고, 상호 확산 방지 특성 면에도 우수한 특성을 지니고 있음을 알 수 있었다.

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Cu2Te 배면 전극을 이용한 p-type CdTe 태양전지의 ohmic contact 형성 및 CdTe 태양전지의 광전압 특성 (Formation of Ohmic Contact in P-Type CdTe Using Cu2 Te Electrode and Its Effect on the Photovoltaic Properties of CdTe Solar Cells)

  • 김기환;윤재호;이두열;안병태
    • 한국재료학회지
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    • 제12권12호
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    • pp.918-923
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    • 2002
  • In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{\circ}C$ to $200^{\circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{\circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{\circ}C$ in $N_2$ and was slowly degraded at $100^{\circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.