Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Formation of Ohmic Contact in P-Type CdTe Using Cu2 Te Electrode and Its Effect on the Photovoltaic Properties of CdTe Solar Cells

Cu2Te 배면 전극을 이용한 p-type CdTe 태양전지의 ohmic contact 형성 및 CdTe 태양전지의 광전압 특성

  • Kim, Ki-Hwan (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Yun, Jae-Ho (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Lee, Doo-Youl (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Ahn, Byung-Tae (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • Published : 2002.12.01
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Abstract

In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{\circ}C$ to $200^{\circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{\circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{\circ}C$ in $N_2$ and was slowly degraded at $100^{\circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.

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