• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.9-15
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• 2009

Compared to the flip-chip process using solder bumps, Cu pillar bump technology can accomplish much finer pitch without compromising stand-off height. Flip-chip process with Cu pillar bumps can also be utilized in radio-frequency packages where large gap between a chip and a substrate as well as fine pitch interconnection is required. In this study, Cu pillars with and without Sn caps were electrodeposited and flip-chip-bonded together to form the Cu-Sn-Cu sandwiched joints. Contact resistances and die shear forces of the Cu-Sn-Cu sandwiched joints were evaluated with variation of the height of the Sn cap electrodeposited on the Cu pillar bump. The Cu-Sn-Cu sandwiched joints, formed with Cu pillar bumps of $25-{\mu}m$ diameter and $20-{\mu}m$ height, exhibited the gap distance of $44{\mu}m$ between the chip and the substrate and the average contact resistance of $14\;m{\Omega}$/bump without depending on the Sn cap height between 10 to $25\;{\mu}m$.

• Journal of Welding and Joining
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• v.24 no.3
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• pp.34-41
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• 2006

The CD (Capacitor Discharge) stud welding utilizes the arc heat and pressure to attach the stud to the workpiece, which consists of the arc. ignition, arcing and pressure welding stages. In order to predict the dynamic behavior of the CD stud welding process, mechanical and electrical models are employed in this work. While the mechanical model estimates the duration of each stage, the electrical model predicts the voltage and current waveforms using the RLC circuit. Effects of process parameters such as the electric components and spring force are analyzed through simulation. It is found that the contact resistance and gap between the stud and base metal influence the tip fusing and arcing duration. The calculated results showed reasonably good agreements with the experiment results.

• Journal of Welding and Joining
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• v.25 no.3
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• pp.45-50
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• 2007

The present study is devoted to investigate the transient flow and to estimate the filling time fur underfill process by using the numerical model established on the fluid momentum equation. For optimization of the design and selection of process parameters, this study extensively presents an estimation of the filling time in the view points of some important factors related to underfill materials and flip-chip geometry. From the results, we conclude that the filling time changes with respect to the under fill materials because of different viscosity, surface tension coefficient and contact angle. It reveals that, as the gap height increases, the filling time decreases substantially, and goes to the saturated values.

• Proceedings of the KIPE Conference
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• 2004.11a
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• pp.45-48
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• 2004

To improve the efficiency characteristics in the resonant converter using the contact-less power supply with the large air-gap and the long primary winding, this paper suggests the three-level series-parallel resonant converter(SPRC). The voltage gain characteristics of the proposed converter have the unit gain in a resonance frequency point of the series and parallel, and input voltage and current in the primary of SPRC are always In phase for the all equivalent load resistance because of the parallel resonant tank of the high impedance. The results are verified on the simulation based on the theoretical analysis and the 4kW experimental prototype.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.9
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• pp.1180-1185
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• 2014

This paper describes the effects on SUS tube of power optical fiber composite cable on underground transmission lines. The effects on grounding, air gap between SUS tube and metal sheath, contact resistance between outer semi-conducting layer and metal sheath and grounding of SUS tube application or not are variously analysed using EMTP in normal operating condition as well as single line to ground fault. From these results, in this paper, the scheme for protecting the electrically abnormal phenomena will be established on power-optical fiber composite cable of underground transmission lines. This paper can contribute to specification of grounding reference of SUS tube of optical fiber composite power cable system.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.531-532
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• 2011

This paper describes the characteristics analysis of power-optical fiber composite cable on underground transmission lines. The effects on grounding, air gap and contact resistance are variously analysed using EMTP in normal operating condition. From these results, in this paper, the scheme for protecting the electrically abnormal phenomena will be established on power-optical fiber composite cable of underground transmission lines.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Journal of Korean Society of Forest Science
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• v.82 no.4
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• pp.337-346
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• 1993

Experiments were performed to find out the effects of simulated acid rain(SAR) of pH 4.0 or pH 2.5 for 12 weeks on stomatal resistance, wettability and anatomical changes in Quercus acutissima and Ginkgo biloba seedlings. As a control, distilled water with a pH 6.5 was also sprayed. Stomatal resistance of Q. acutissima and of G. biloba remarkably increased after exposure to SAR. SAR increased the wettability of Q. acutissima leaves measured with water blue solution and of G. biloba leaves measured by leaf contact angle method. Anatomical changes in the leaves of Q. acutissima affected by SAR were the partial damage of epidermis and parenchymatous cells. Scanning electron microscopical observation showed that the number of trichomes in the leaves of Q. acutissima treated with SAR markedly decreased and the erosion of epicuticular wax was significant. No distinct damage was found in the G. biloba leaves at pH 4.0, while epidermis and vascular tissue were collapsed at pH 2.5. No significant alteration of surface structures in this tree species was observed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.8
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• pp.1-6
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• 2010

We report on the electrical properties of Ti/Al/Ni/Au (20 nm/ 150 nm/ 30 nm/ 100 nm) Ohmic contacts and the anisotropic conductivity of n-type ${\alpha}$-plane ([11-20]) GaN grown on $\gamma$-plane ([1-102]) sapphire substrates. The Ti/Al/Ni/Au Ohmic contacts and their sheet resistances are characterized by using the transfer length method (TLM) as a function of azimuthal angles. It is found that the specific contact resistance does not depend on the axis orientation and there are significant electrical anisotropy in ${\alpha}$-plane GaN films on $\gamma$-plane sapphire substrates, and the sheet resistance varies with azimuthal angles. The sheet resistance values in the direction parallel to m-axis [1-100] are 25% ~ 75% lower than those parallel to c-axis [0001] directions. Thus, Basal stacking faults (BSFs) are offered as a feasible source of the anisotropic mobility in defected m-axis direction because the band-edge discontinuities owing to the differential band gap structure.

• Fashion & Textile Research Journal
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• v.17 no.3
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• pp.462-475
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• 2015

This paper investigated the characteristics of the physical properties of woven fabrics according to the yarn structure and fibre property. It was found that wicking property of woven fabrics made of sheath/core hybrid yarn were better than those of siro spun and siro-fil hybrid yarns, which was caused by platform for transport of moisture vapor by filaments on the core part of sheath core hybrid yarns. In drying property, the fabric specimen woven by PP/Tencel sheath core hybrid yarns as a warp and Coolmax/Tencel spun yarn as a weft showed quick drying property, which was caused by the sheath core hybrid yarn structure as drainage of water moisture and coolmax fibre characteristics as quick dry material. Concerning to breathability and thermal conductivity as heat transport phenomena, it was observed that breathability of fabrics woven with hybrid yarns such as sheath core and siro-fil in the warp and hi-multi filaments in the weft showed the lowest water vapor resistance, which was explained as due to for air gap in the fibres of the spun yarns to restrict the wet heat transport from perspiration vapor. Thermal conductivities of the fabrics woven with PET/Tencel siro-fil yarns in the weft and hybrid yarns such as sheath core and siro-fil in the warp revealed the highest values, which was observed as due to higher thermal conductivity of PET than PP and more contact point between fibres in the siro-fil and sheath core hybrid yarns.