• Journal of Information Display
• /
• 제4권1호
• /
• pp.17-23
• /
• 2003

A thermoset type anisotropic conductive adhesive film (ACAF) comprising epoxy resin and natural butyl rubber (NBR) as the binder, micro-encapsulated imidazole as the curing agent, and Ni/Au coated polymer bead as a conductive particle has been studied. These films have been prepared to respond to requirements such as improved contact resistance, current status less of than 60 ${\mu}m$ and reliability. These films can also be used for connection between the ITO glass for LCD panel and the flexible circuit board. The curing conditions for the connection were 40, 20 and 15 seconds at 150, 170 and 190 $^{\circ}C$, respectively. The initial contact resistance and adhesion strength were 0.5 ${\Omega}/square$ and 0.4 kg/cm under the condition of 30 kgf/$^{cm}^2}$, respectively. After completing one thousand thermal shock cycling tests between -15 $^{\circ}C$ and 100 $^{\circ}C$, the contact resistance was maintained below 0.7 ${\Omega}/square$. Durability against high temperature (80$^{\circ}C$) and high humidity (85 % RH) was also tested to confirm long-term stability (1000 hrs) of the conduction.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2008년도 춘계학술발표대회 논문집
• /
• pp.203-208
• /
• 2008

The purpose of this study is to compare the different shapes of condenser of the direct contact heat transfer from the heat pipe condenser to the receiving water using CFD. The heat transfer from the working fluid of the heat pipe to receiving fluid flows through the manifolder is one of the important part in evacuated solar collector system. The retrenchment of the thermal resistance between the heat pipe and the manifolder could increase the thermal performances of the whole system. Recently, direct heat transfer from the heat pipe condenser wall to the receiving water was suggested and accompanied experiments were achieved. This experiment shows the better performances of the direct contact heat transfer analogically. Preceding calculations are carried out for the performance comparison: mesh dependence test, discretization method test and equation model test. with these preceding tests, 4 different shapes of condenser are compared and each case were set up for the same heat flux at the condenser wall. The calculation result shows that the efficiency of the extended surface condenser shape is 10% higher then the that of the others.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.157-157
• /
• 2010

Vertical-structure light-emitting diodes (V-LEDs) by laser lift-off (LLO) have been exploited for high-efficiency GaN-based LEDs of solid-state lightings. In V-LEDs, emitted light from active regions is reflected-up from reflective ohmic contacts on p-GaN. Therefore, silver (Ag) is very suitable for reflective contacts due to its high reflectance (>95%) and surface plasmon coupling to visible light emissions. In addition, low contact resistivity has been obtained from Ag-based ohmic contacts annealed in oxygen ambient. However, annealing in oxygen ambient causes Ag to be oxidized and/or agglomerated, leading to degradation in both electrical and optical properties. Therefore, preventing Ag from oxidation and/or agglomeration is a key aspect for high-performance V-LEDs. In this work, we demonstrate the enhanced thermal stability of Ag-based Ohmic contact to p-GaN by reducing the thermal compressive stress. The thermal compressive stress due to the large difference in CTE between GaN ($5.6{\times}10^{-6}/^{\circ}C$) and Ag ($18.9{\times}10^{-6}/^{\circ}C$) accelerate the diffusion of Ag atoms, leading to Ag agglomeration. Therefore, by increasing the additional residual tensile stress in Ag film, the thermal compressive stress could be reduced, resulting in the enhancement of Ag agglomeration resistance. We employ the thin Ni layer in Ag film to form Ni/Ag mutli-layer structure, because the lattice constant of NiO ($4.176\;{\AA}$ is larger than that of Ag ($4.086\;{\AA}$). High-resolution symmetric and asymmetric X-ray diffraction was used to measure the in-plane strain of Ag films. Due to the expansion of lattice constant by oxidation of Ni into NiO layer, Ag layer in Ni/Ag multi-layer structure was tensilely strained after annealing. Based on experimental results, it could be concluded that the reduction of thermal compressive stress by additional tensile stress in Ag film plays a critical role to enhance the thermal stability of Ag-based Ohmic contact to p-GaN.

• 대한기계학회논문집B
• /
• 제37권3호
• /
• pp.237-242
• /
• 2013

본 논문은 접촉력 보정이 가능한 혈류량 측정기를 제안한다. 기존 혈류량 측정기는 접촉력의 영향을 최소화하기 위해 혈류량 센서를 피부에 고정했으나 이런 점은 전자기기에 적용이 용이하지 않다는 단점이 있다. 이에 본 연구에서는 혈류량 센서에 힘 센서를 집적하여 혈류량과 접촉력의 동시 측정을 통해 접촉력에 따른 혈류량 변화 오차를 보정하여 접촉력에 무관한 혈류량 측정이 가능한 소자 및 방법을 제안한다. 제작된 혈류량 측정기의 성능 분석 결과, 접촉력에 따른 혈류량 변화는 31.7%/N 의 선형적 감소경향임을 확인하였고, 이를 이용하여 접촉력에 따른 혈류량 오차를 보정한 결과, 접촉력 1~3N에서 최대 편차가 9.8%로 나타나 다른 접촉력 조건에서도 일정한 혈류량 측정이 가능함을 보였다. 제안한 소자는 접촉력에 무관하게 정확한 혈류량을 측정할 수 있어, 접촉 가능한 전자기기에의 적용이 용이하다.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 추계학술대회 초록집
• /
• pp.53.2-53.2
• /
• 2010

In this study, we focused on our specialized electrode process for Si back-contact crystalline solar cell. It is different from other well-known back-contact cell process for thermal aspect and specialized process. In general, aluminum makes ohmic contact to the Si wafer and acts as a back surface reflector. And, silver is used for low series resistance metal grid lines. Aluminum was sputtered onto back side of wafer. Next, silver is directly patterned on the wafer by screen printing. The sputtered aluminum was removed by wet etching process after rear silver electrode was formed. In this process, the silver paste must have good printability, electrical property and adhesion strength, before and after the aluminum etching process. Silver paste also needs low temperature firing characteristics to reduce the thermal budget. So it was seriously collected by the products of several company of regarding low temperature firing (below $250^{\circ}C$) and aluminum etching endurance. First of all, silver pastes for etching selectivity were selected to evaluate as low temperature firing condition, electrical properties and adhesive strength. Using the nano- and micron-sized silver paste, so called hybrid type, made low temperature firing. So we could minimize the thermal budget in metallization process. Also the adhesion property greatly depended on the composition of paste, especially added resin and inorganic additives. In this paper, we will show that the metallization process of back-contact solar cell was realized as optimized nano-paste characteristics.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2013년도 춘계학술대회 논문집
• /
• pp.184-184
• /
• 2013

본 연구에서는 금 합금 도금층의 접촉저항에 미치는 첨가 합금원소의 영향을 조사하였다. 또한 표면실장을 위한 솔더링 공정에서 도금층에 가해지는 열이력이 접촉저항 값에 미치는 영향을 조사하기 위해서, $260^{\circ}C$에서 thermal aging을 실시한 후, 접촉저항을 측정하였다. 합금원소의 종류에 따라서 thermal aging후의 접촉저항 값이 변하는 요인을 조사하기 위해서 XPS를 이용하여 표면분석을 실시하였다.

• 한국전기전자재료학회논문지
• /
• 제22권9호
• /
• pp.717-723
• /
• 2009

Ni/Al ('/' denotes deposition sequence) contacts were deposited on Al-implanted 4H-SiC for ohmic contact formation, and the conduction properties were characterized and compared with those of Ni-only contacts. The thicknesses of the Ni and Al thin film were 30 nm and 300 nm, respectively, and the films were sequentially deposited bye-beam evaporation without vacuum breaking. Rapid thermal anneal (RTA) temperature was varied as follows : $840^{\circ}C$, $890^{\circ}C$, and $940^{\circ}C$. The specific contact resistivity of the Ni contact was about $^{\sim}2\;{\pm}\;10^{-2}\;{\Omega}{\cdot}cm^2$, However, with the addition of Al overlayer, the specific contact resistivity decreased to about $^{\sim}2\;{\pm}\;10^{-4}\;{\Omega}{\cdot}cm^2$, almost irrespective of RTA temperature. X-ray diffraction (XRD) analysis of the Ni contact confirmed the existence of various Ni silicide phases, while the results of Ni/Al contact samples revealed that Al-contaning phases such as $Al_3Ni$, $Al_3Ni_2$, $Al_4Ni_3$, and $Ab_{3.21}Si_{0.47}$ were additionally formed as well as the Ni silicide phases. Energy dispersive spectroscopy (EDS) spectrum showed interfacial reaction zone mainly consisting of Al and Si at the contact interface, and it was also shown that considerable amounts of Si and C have diffused toward the surface. This indicates that contact resistance lowering of the Ni/Al contacts is related with the formation of the formation of interfacial reaction zone containing Al and Si. From these results, possible mechanisms of contact resistance lowering by the addition of Al were discussed.

• Transactions on Electrical and Electronic Materials
• /
• 제16권2호
• /
• pp.99-102
• /
• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.

• 전자공학회논문지A
• /
• 제31A권5호
• /
• pp.94-100
• /
• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2004년도 제5회 압연심포지엄 신 시장 개척을 위한 압연기술
• /
• pp.207-215
• /
• 2004

There are various characteristics called for in work roll and intermediate rolls for cold rolling mills. Among these characteristics, the two main requirements are to ensure the quality of the rolled products and to reduce roll cost. To achieve these needs, resistance to wear, to thermal shock and to contact fatigue are especially important. This paper describes that new material(named DSR1) for intermediate rolls which greatly increases rolling campaign and improves resistance to wear has been developed. DSR1 was successfully manufactured and has been used in the cold rolling mill. It showed that Trial product was homogenous in hardness distribution and sufficient usable diameter. Also in service test, trial product is much more excellent rolling performance than conventional $5\%Cr$.