• Journal of the Korean Society for Nondestructive Testing
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• v.21 no.5
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• pp.532-541
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• 2001

Developments of nondestructive evaluation techniques for reduction of strength or toughness by aging of material have been carried out, and the method using electrical resistivity is one of them. In this study, to examine the application of electrical resistivity to the evaluation of degradation of metallic alloy, ten different non-magnetic materials were selected as test materials. Electrical resistivities measured by DC two-point probe method and those measured by non-contact type eddy current method were compared with each other. In addition, to examine the application possibility of four-point probe technology in field, the electrical resistivities for 1Cr-lMo-0.25V steel measured by DC two-point probe method and four-point probe method were compared with each other Differences between two measured values for the 1Cr-1Mo-0.25V steel were 0.6%. Therefore, the four-point probe method can be applied to the estimation of the degradation of metallic alloy. ect.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.230-234
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• 2009

It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.105-109
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• 2003

Electrical properties of Ni/Au/p-GaN and optical properties of epitaxial GaN MQW LED on sapphire were characterized. At 20 mA forward bias, GaN MQW emitted in the blue at 470 nm. Current-voltage (I-V) characteristics were decreased linearly with the annealing temperature. The resistivity of Ni/Au contacts was found by TLM measurements to be of device quality (2×10/sup -1/Ωㆍcm).

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.93-94
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• 2008

In order to suppress the current crowding in light emitting diodes (LEDs) grown on sapphire substrate, the effect of nonuniform contact resistivity between TME layer and p-GaN layer on the LED surface was theoretically investigated. The analysis results showed that current crowding occurring around p-electrode could be considerably improved, which in turn would be helpful to improve the electrostatic discharge (ESD) characteristic.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.497-502
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• 2008

BGA test sockets failed earlier than the expected life-time due to abnormal signal delay, shown especially at the low temperature ($-50^{\circ}C$). Analysis of failed sockets was conducted by EDX, AES, and XRD. A SnO layer contaminated with C was found to form on the surface of socket pins. The formation of SnO layer was attributed to the repeated Sn transfer from BGA balls to pin surface and instant oxidation of fresh Sn. As a result, contact resistance increased, inducing signal delay. Abnormal signal delay at the low temperature was attributed to the increasing resistivity of Sn oxide with decreasing temperature, as manifested by the resistance measurement of $SnO_2$.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.25-26
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• 2011

In this paper, we investigated the effect of various annealing processes on the electrical characteristics of oxide thin film transistors (TFTs). When we annealed the TFT devices before and after source/drain (S/D) process, we could observe the different electrical characteristics of oxide TFTs. When we annealed the TFTs after deposition of transparent indium zinc oxide S/D electrodes, the annealing process decreased the contact resistance but increased the resistivity of S/D electrodes. The field effect mobility, subthreshold slope and threshold voltage of the oxide TFTs annealed before and after S/D process were 5.83 and 4.47 $cm^2$/Vs, 1.20 and 0.82 V/dec, and 3.92 and 8.33 V respectively. To analyze the differences, we measured the contact resistances and the carrier concentrations using transfer length method (TLM) and Hall measurement.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.86-91
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• 1999

In order to analyse the degradation process of epoxy/glass fiber for outdoor condition, FRP laminate was exposed to the wavelength of ultraviolet rays and evaluated by comparing contact angle, surface resistivity, surface potential decay, and ESCA spectrum respectively. As irradiation energy are increased, the surface properties were steeply decreased in the range of 300[nm]. But the measured values within the scope of400[nm]∼440[nm] showed a increase as compared with the untreated ones. Also, fromthe result of ESCA spectrum, it was confirmed plenty of oxygen groups on the spot showing the maximum decrease of surface properties and the existence of ether groups on the surface of coloring phase. We can conclude that the degradation phenomena on the surface of epoxy composites are dominated by the induction of ester and carboxyl groups.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.12-17
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• 2004

The body-tied FinFETs (bulk FinFETs) implemented on bulk Si substrate were characterized through 3-dimensional device simulation. By controlling the doping profile along the vertical fin body, the bulk FinFETs can be scaled down to sub-30 nm. Device characteristics with the body shape were also shown. At a contact resistivity of $1{\times}10^{-7}\;{\Omega}\;cm^2$, the device with side metal contact of fin source/drain showed higher drain current by about two. The C-V results were also shown for the first time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.243-247
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• 2003

The effect of accelerated weathering(UV) on three type of ethylene propylene diene monomer(EPDM) composite used for higher voltage insulator were investigated by weather-emoter. For weatherability of EPDM composite, surface resistance, dielectric breakdown strength, change of contact angle, surface composition were measured according to UV accelerated weathering time. From the resort of the measurement of surface resistivity, contact angle of EPDM composite decreased and showed chalking and cracking phenomenon when UV weathweing time was for 1500 h and 2000 h. The analysis of surface atomic composition indicated that surface aluminiu(Al) content was detected due to chalking phenomenon after 1500 h of UV weathering, Oxygen content of all composite increased due to the oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.334-337
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• 2002

The Quantum Hall Resistance(QHR) device which consists of GaAs/AlGaAs heterojunction structure is used for the realization of QHR Standard based on QHE. In order to characterize electrical contact resistances and dissipations of the device, it is slowly cooled down for eliminating thermal shock and unwanted noise. Then, the two properties are measured under 1.5 K and 5.15 T. Contact resistances are all within 1.2 Ω and longitudinal resistivities are all within 1 mΩ up to DC 90${\mu}$A. The results mean the device is operated well to realize the QHR Standard. To confirm it, the QHR Standard having the device is compared using a direct current comparator bridge with a 1 Ω resistance standard which the calibrated value is known from QHR standards maintained by other countries. The difference between them is agreed well within measurement uncertainty. It is thus considered that the properties of the device is estimated well and has good performance.