• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.344-344
• /
• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• 폴리머
• /
• 제29권5호
• /
• pp.433-439
• /
• 2005

내구발수성 고분자를 얻기 위해 불소화 알킬아크릴레이트-스테아릴아크릴레이트-m-이소프로페닐-$\alpha,\;alpha$-디메틸벤질 이소시아네이트(TMI)를 유화중합시켜 불소화 알킬기와 이소시아네이트기를 가지는 공중합체를 제조하였다. 3 단량체의 공중합속도는 비이온 유화제 및 비이온-양이온 혼합 유화제의 사용에 따라 상당히 의존하였고 그 최적조건을 얻었다. 공중합체의 입자크기는 105에서 222nm의 범위에 있었고 비이온-양이온의 혼합 유화제에 의해 만들어진 공중합체가 비이온 유화제로 만들어진 공중합체보다 입자가 작았다. 나일론과 면의 모델 화합물로 N-메틸아세트아미드와 셀로비오스 각각과 TMI는 반응하지 않았다. 반면에 TMI와 부틸아민은 실온에서 반응하였다. 혼합 유화제에 의해 제조된 공중합체를 코팅한 나일론과 PET 천에 대한 세탁 전후의 물의 접촉각은 $139^{\circ}$와 $133^{\circ}$ 정도였다. 따라서 공중합체의 내구발수성은 우수하였다

• 한국재료학회지
• /
• 제18권12호
• /
• pp.664-668
• /
• 2008

Vapor phase polymerization of a conductive polymer on a $SiO_2$ surface can offer an easy and convenient means to depositing pure and conductive polymer thin films. However, the vapor phase deposition is generally associated with very poor adhesion as well as difficulty when patterning the polymer thin film onto an oxide dielectric substrate. For a significant improvement of the patternability and adhesion of Poly(3-hexylthiophene) (P3HT) thin film to a $SiO_2$ surface, the substrate was pre-patterned with n-octadecyltrichlorosilane (OTS) molecules using a ${\mu}$-contact printing method. The negative patterns were then backfilled with each of three amino-functionalized silane self-assembled monolayers (SAMs) of (3-aminopropyl) trimethoxysilane (APS), N-(2-aminoethyl)-aminopropyltrimethoxysilane (EDA), and (3- trimethoxysilylpropyl)diethylenetriamine (DET). The quality and electrical properties of the patterned P3HT thin films were investigated with optical and atomic force microscopy and a four-point probe. The results exhibited excellent selective deposition and significantly improved adhesion of P3HT films to a $SiO_2$ surface. In addition, the conductivity of polymeric thin films was relatively high (${\sim}13.51\;S/cm$).

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
• /
• pp.73.1-73.1
• /
• 2010

태양광 시장은 세계적인 금융 위기 속에서도 점점 그 규모가 확대되고 있다. 시장의 규모가 확대되고 있음에도 불구하고 금융 위기를 겪으면서 생산자 중심의 시장에서 수요자 중심의 시장으로 바뀌게 되었다. 이에 따라 더 적은 비용으로 높은 출력의 제품만이 경쟁력을 가지게 됨으로써 효율이 더욱 이슈화되었다. 여러 태양전지 중 가장 점유율이 높은 결정질 태양전지는 일반적인 양산 공정만으로 효율을 높이는데 한계가 있으므로 selective emitter, back contact, light induced plating 등의 새로운 공정을 도입하여 효율을 높이려는 경향이 나타나고 있다. 본 연구에서는, ALD 장치를 사용하여 결정질 태양전지의 후면을 passivation 함으로써 효율을 높이는 방법을 모색하였다. 부동화 층으로는 $Al_2O_3$를 사용하였으며 셀을 제조하여 평가하였다. 실험방법은 p-type의 웨이퍼를 이용하여 습식으로 texturing 후 $POCl_3$ 용액으로 p-n junction을 형성하였고 anti-reflection 막인 SiNx는 PECVD를 사용하여 R.I 2.05, 80nm 두께로 증착하였다. 그런 다음 후면의 n+ layer를 제거하기 위하여 SiNx에 영향을 미치지 않는 용액을 사용하여 후면을 식각하였다. BSF 층은 screen printer로 Al paste를 printing하여 형성하였고 Al etching용액으로 여분의 Al제거한 후 ALD 장치를 이용하여 $Al_2O_3$를 증착하였다. 마지막으로 전극을 형성한 후 laser로 isolation하여 효율을 평가하였다.

• 한국전기전자재료학회논문지
• /
• 제24권1호
• /
• pp.12-16
• /
• 2011

In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.458.2-458.2
• /
• 2014

We have demonstrated that simple brush-painted Ti-doped $In_2O_3$(TIO) films can be used as a cost effective transparent anodes for organic solar cells (OSCs). We examined the RTA effects on the electrical, optical, and structural properties of the brush painted TIO electrodes. By the direct brushing of TIO nanoparticle ink and rapid thermal annealing (RTA), we can simply obtain TIO electrodes with a low sheet resistance of 28.25 Ohm/square and a high optical transmittance of 85.48% under atmospheric ambient conditions. Furthermore, improvements in the connectivity of the TIO nano-particles in the top region during the RTA process play an important role in reducing the resistivity of the brush-painted TIO anode. In particular, the brush painted TIO films showed a much higher mobility ($33.4cm^2/V-s$) than that of previously reported solution-process transparent oxide films ($1{\sim}5cm^2/V-s$) due to the effects of the Ti dopant with higher Lewis acid strength (3.06) and the reduced contact resistance of TIO nanoparticles. The OSCs fabricated on the brush-painted TIO films exhibited cell-performance with an open circuit voltage (Voc) of 0.61 V, shot circuit current (Jsc) of $7.90mA/cm^2$, fill factor (FF) of 61%, and power conversion efficiency (PCE) of 2.94%. This indicates that brush-painted TIO film is a promising cost-effective transparent electrode for printing-based OSCs with its simple process and high performance.

• Tribology and Lubricants
• /
• 제36권5호
• /
• pp.267-273
• /
• 2020

This study experimentally investigates hydrophobic surfaces fabricated via additive manufacturing. Additive manufacturing, commonly known as 3D printing, is the process of joining materials to fabricate parts from 3D model data, usually in a layer-upon-layer manner. Digital light processing is used to fabricate hydrophobic surfaces in this study. This method uses photo-curable resins and ultraviolet (UV) sources. Moreover, this technique generally has faster shaping speeds and is advantageous for the fabrication of small components because it enables the fabrication of one layer at a time. Two photo-curable resins with different compositions are used to fabricate micro-patterns of hydrophobic surfaces. The resins are composed of a photo-initiator, monomer, and oligomer. Experiments are conducted to determine suitable process conditions for the fabrication of hydrophobic surfaces depending on the type of resin. The most important factors affecting the process conditions are the UV exposure time and slice thickness. The fabrication capability according to the process conditions is evaluated using the side and top views of the micro-patterns observed using a microscope. The micro-patterns are collapsed and intertwined when the exposure time is short because sufficient light (heat) is not applied to cure the photo-curable resin with a given slice thickness. On the other hand, the micro-patterns are attached to each other when the exposure time is prolonged because the over-curing time can cure the periphery of a given shape. When the slice is thicker, the additional curing area is enlarged in each slice owing to the straightness of UV light, and the slice surface becomes rough.

• 분석과학
• /
• 제12권3호
• /
• pp.218-223
• /
• 1999

스크린 프린팅 기술을 이용하여 일회용 에탄올 센서를 개발하고 전기화학적 방법으로 그 성능을 조사하였다. 일회용 에탄올 센서는 폴리에스테르 기질 위에 탄소와 은 반죽 그리고 절연체 잉크로 작업 및 기준전극의 감응부위와 전기적 접촉부위의 형상을 차례로 인쇄한 후 알코올탈수소효소(ADH) 또는 알코올산화효소(AOD)를 알려진 전자전달 매개체(mediator)와 함께 작업전극에 고정시켜 제작하였다. 일회용 센서의 제작 과정에서 감응도와 재현성을 높이기 위하여 프린팅한 탄소 작업전극을 전처리 하는 몇 가지 방법들을 적용하고 그 결과들을 비교하였다. 제작된 일회용 센서는 소량의 혈액시료로 음주측정을 하는데, 그리고 발효공정 제어 등에 유용하게 사용될 수 있다.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
• /
• pp.56-59
• /
• 2011

The process conditions for high efficiency industrial crystalline Si solar cells with selective emitter were optimized. In the screen printed solar cells, the sheet resistance must be 50-60V/sq. because of metal contact resistance. But the low sheet resistance causes the increase of the recombination and blue response at the short wavelength. Therefore, the screen printed solar cells with homogeneous emitter have limitations of efficiency, and this means that the selective emitter must be used to improve cell efficiency. This work demonstrates the feasibility of a commercially available selective emitter process, based on screen printing and conventional diffusion process. Now, we improved cell efficiency from 18.29% to18.45% by transition of heavy emitter pattern and shallow emitter doping condition.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
• /
• pp.51-55
• /
• 2011

In this paper, the optimized doping condition of crystalline silicon solar cells with 156 ${\times}$ 156 mm2 area was studied. To optimize the drive-in condition in the doping process, the other conditions except drive-in temperature and time were fixed. After etching 7 ${\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80 nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in $400-425-450-550-850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $828^{\circ}C$ to $860^{\circ}C$ and time was from 3 min to 40 min. The sheet resistance of wafer was fixed to avoid its effect on solar cell. The solar cell fabricated with various conditions showed the similar conversion efficiency of 17.4%. This experimental result showed the drive-in temperatures and times little influence on solar cell characteristics.