• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.2-294.2
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• 2016

Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.76-76
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• 1999

Low resistance ohmic contacts to the Si-doped InGaN(~$\times$10$^{19}$ ㎤) were obtained using the W metallization schemes. Specific contact resistance decreased with increasing annealing temperature. The lowest resistance is obtained after a nitrogen ambient annealing at 95$0^{\circ}C$ for 90s, which results in a specific contact resistance of 2.75$\times$10$^{-8}$ Ω$\textrm{cm}^2$. Interfacial reactions and surface are analyzed using x-ray diffraction, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The X-ray diffraction results show that the reactions between the W film and the InGaN produce a $\beta$-W$_2$N phase at the interface. TEM results also show that the $\beta$-W$_2$N has a rough interface, which increase contact area. It shows that the morphology of the contacts is stable up to a temperature as high as 95$0^{\circ}C$. Possible mechanisms are proposed to describe the annealing temperature dependence of the specific contact resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.209.2-209.2
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• 2015

Two dimensional layered materials, such as transition metal dichalcogenides (TMDs) family have been attracted significant attention due to novel physical and chemical properties. Among them, molybdenum disulfide ($MoS_2$) has novel physical phenomena such as absence of dangling bonds, lack of inversion symmetry, valley degrees of freedom. Previous studies have shown that the interface of metal/$MoS_2$ contacts significantly affects device performance due to presence of a scalable Schottky barrier height at their interface, resulting voltage drops and restricting carrier injection. In this study, we report a new device structure by using few-layer graphene as the bottom interconnections, in order to offer Schottky barrier free contact to bi-layer $MoS_2$. The fabrication of process start with mechanically exfoliates bulk graphite that served as the source/drain electrodes. The semiconducting $MoS_2$ flake was deposited onto a $SiO_2$ (280 nm-thick)/Si substrate in which graphene electrodes were pre-deposited. To evaluate the barrier height of contact, we employed thermionic-emission theory to describe our experimental findings. We demonstrate that, the Schottky barrier height dramatically decreases from 300 to 0 meV as function of gate voltages, and further becomes negative values. Our findings suggested that, few-layer graphene could be able to realize ohmic contact and to provide new opportunities in ohmic formations.

• Structural Engineering and Mechanics
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• v.57 no.2
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• pp.295-313
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• 2016

In this study, the three-dimensional finite element method is used to determine the stress intensity factor in Mode I and Mixed mode of a centered crack in an aluminum specimen repaired by a composite patch using contour integral. Various mesh densities were used to achieve convergence of the results. The effect of adhesive joint thickness, patch thickness, patch-specimen interface and layer sequence on the SIF was highlighted. The results obtained show that the patch-specimen contact surface is the best indicator of the deceleration of crack propagation, and hence of SIF reduction. Thus, the reduction in rigidity of the patch especially at adhesive layer-patch interface, allows the lowering of shear and normal stresses in the adhesive joint. The choice of the orientation of the adhesive layer-patch contact is important in the evolution of the shear and peel stresses. The patch will be more beneficial and effective while using the cross-layer on the contact surface.

• 한국전산유체공학회:학술대회논문집
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• 2009.11a
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• pp.84-87
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• 2009

Electrowetting is a versatile tool to handle tiny droplets and forms a backbone of digital microfluidics. Numerical analysis is necessary to fully understand the dynamics of electrowetting, especially in designing electrowetting-based devices, such as liquid lenses and reflective displays. We developed a numerical method to analyze the general contact-line problems, incorporating dynamic contact angle models. The method is based on the conservative level set method to capture the interface of two fluids without loss of mass. We applied the method to the analysis of spreading process of a sessile droplet for step input voltages and oscillation of the droplet for alternating input voltages in electrowetting. The result was compared with experimental data. It is shown that contact line friction significantly affects the contact line motion and the oscillation amplitude. The pinning process of contact line was well represented by including the hysteresis effect in the contact angle models.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.133-136
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• 2004

In this study, the characteristics of 3C-SiC ohmic contact were investigated. Titanium-tungsten(TiW) films were used for contact metalization. The ohmic contact resistivity between 3C-SiC and TiW was measured by HP4155 and then calculated with the circular transmission line method(C-TLM). And also the physical properties of TiW and the interface between TiW and 3C-SiC were analyzed using XRD and AES. TiW films make a good role of a diffusion barrier and their contact properties with 3C-SiC are stable at high temperature.

• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.5
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• pp.661-669
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• 1986

In this study, the resistance spot welding process of an aluminum alloy was analyzed through the numerical simulation including the electric contact resistance and the heat generation in the electrode. The finite element model was used to solve the electro-thermal responses in weld cycles. The resistance of the contact area was represented as the contact element modeling, but the thermal resistance between the contact surfaces was neglected. Welding tests of Alclad 2024-T3 aluminum alloy were made not only to get the input data for the numerical simulation, but also to compare the numerical results. The contact resistance was determined initially by the contact resistance tests and assumed to decay exponentially up to the solidus temperature. The temperature distributions and dynamic resistance obtained numerically were in good agreement with the experimental results. Numerical results revealed that nugget growth depends mainly on the heat generated in the workpiece and its contact area. The heat generated in the electrode has, however, only a little effect on the nugget growth, and the heat generation in the electrode-workpiece interface is initially high but decrease repidly.

• Journal of Mechanical Science and Technology
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• v.20 no.10
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• pp.1548-1556
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• 2006

Appropriate contact force is required for the pantograph on the high speed train to collect current from the catenery system without separation. However, at high speed, large aerodynamic lifting force is generated by the contact plate and the body of pantograph, which may cause wear of the contact wire. In this study, to confirm the interface performance of the pantograph on Korea High Speed Train, a method to measure the contact force of the pantograph was proposed and the related measuring system was developed. The forces acting on the pantograph were clarified and a practical procedure to estimate the forces was proposed. A special device was invented and applied to measure the aerodynamic lifting force. Measured contact forces were displayed by the developed system and evaluated based on the criteria.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.83-89
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• 1991

The partial discharge properties of interface layer in Mica-Epoxy composite, which has been mainly used for the coil insulating material of high voltage machinery, are different from those of resins due to the abnormal interface layer to be presented between inorganic material and resin. Accordingly, the study on discharge of interface in composite insulting system is strongly requsted for not only an increasing of insulating strength, but also the basical information of diagnosis system for high voltage equipment. As a result, it has been confirmed that the interface is an abnormal resin layer and the contact states at interface is depended upon the density of silane aqueous solution. Pulse frequency at abnormal interface shows a linear increasing with enlargement of discharge quantity. Whereas, in case of normal interface, pulse frequency property represents exponential increasing at the point of saturating. A life model can be diagramed from results of time dependance of skewness, and a survival life time can be quantified from the life model suggested.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.5
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• pp.455-461
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• 1999

In this paper, we present the 3DOF force-rei1ecting interface which allows to acquire force of objc'Ct within a a virtual environment. This system is comlxlsed of device, virtual environment model, and force-rei1ecting r rendering algorithm. We design a J DOF force reflecting device using the pc$\alpha$allel linkage, torque shared by W wire, and the controller of system applied by impedance control algorithm. The force reflecting behaviour i implemented as a function position is equivalent to controlling the mechanical impedance felt by the user. E Especially how force should be supplied to user, we know using a God-Object algorithm As we experiment a system implement$\varepsilon$d by the interface of 3D virtual object and 3DOF force reJll'Cting i interface, we can feel a contact, non contact of :)D virtual object surface and sensin앙 of push button model.utton model.