• Environmental Engineering Research
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• v.22 no.4
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• pp.339-346
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• 2017

The objective of this study is the evaluation of the performance of a large-scale respirometer (LSR) of 17.7 L in the determination of the methane generation rate constant (k) values. To achieve this objective, a comparison between anaerobic (GB21) and LSR tests was conducted. The data were modeled using a linear function, and the resulting correlation coefficient ($R^2$) of the linear regression is 0.91. This result shows that despite the aerobic conditions, the biodegradability values that were obtained from the LSR test produced results that are similar to those from the GB21 test. In this respect, the LSR test can be an indicator of the anaerobic biodegradability for landfill waste. In addition, the results show the high repeatability of the tests with an average coefficient of variance (CV) that is lower than 10%; furthermore, the CV for the LSR is lower than that of the GB21, which indicates that the LSR-test method could provide a better representation of waste samples. Therefore, the LSR method allows for both the prediction of the long-term biodegradation potential in a shorter length of time and the reduction of the sampling errors that are caused by the heterogeneity of waste samples. The k values are $0.156y^{-1}$ and $0.127y^{-1}$ for the cumulative biogas production (GB21) and the cumulative oxygen uptake for the LSR, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.539-546
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• 2003

The GaN/sapphire layered structure is a potential candidate for high frequency devices due to high acoustic velocity of sapphire. Generally, the GaN thin films are epitaxially grown on c, a, and r-plane sapphire substrates. In this study, wave equations of GaN/sapphire structure were calculated according to crystallographic relationship between GaN layer and sapphire substrate. On each plane, the shear velocity was changed by the kH of GaN layer and propagation direction on sapphire substrate. We found electromechanical coupling constant of r-plane was better than the others. As a result, elastic stiffness and electromechanical coupling constant of materials are affected by a cut and an orientation of substrate. GaN/r-plane sapphire structure is more advantageous for high frequency SAW devices.

• Journal of Korean Society of Water and Wastewater
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• v.21 no.6
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• pp.679-687
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• 2007

Nanoscale zero valent ion (nZVI) technology is emerging as an innovative method to treat contaminated groundwater. The activity of nZVI is very high due to their high specific surface area, and supporting this material can help to preserve its chemical nature by inhibiting oxidation. In this study, nZVI particles were attached to granular ion-exchange resin through borohydride reduction of ferrous ions, and chemical reduction of nitrate by this material was investigated as a potential technology to remove nitrate from groundwater. The pore structure and physical characteristics were measured and the change by the adsorption of nZVI was discussed. Batch tests were conducted to characterize the activity of the supported nZVI and the results indicated that the degradation of nitrate appeared to be a pseudo first-order reaction with the observed reaction rate constant of $0.425h^{-1}$ without pH control. The reduction process continued but at a much lower rate with a rate constant of $0.044h^{-1}$, which is likely limited by mass transfer. To assess the effects of other ions commonly found in groundwater, the same experiments were conducted in simulated groundwater with the same level of nitrate. In simulated groundwater, the rate constant was $0.078h^{-1}$ and it also reduced to $0.0021h^{-1}$ in later phase. The major limitation in application of ZVI for nitrate reduction is ammonium production. By using a support material with ion exchange capacity, the problem of ammonium release can be solved. The ammonium was not detected in the batch test, even when other competitive ions such as calcium and potassium existed.

• Ocean Science Journal
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• v.40 no.2
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• pp.79-89
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• 2005

Laboratory radiotracer experiments were conducted to determine assimilation efficiencies (AE) from ingested algal food and oxic sediment particles, uptake rates from the dissolved phase, and the efflux rates of Cd, Cr and Zn in the Asiatic clam Corbicula fluminea. Among three elements, AE from both algal and sediment food was greatest for Cd, followed by Zn and Cr. The AEs of tested elements from algal food (Phaeodactylum tricornutum) were consistently higher than those from sediments at a given salinity and temperature. The influence of salinity (0, 4 and 8 psu) and temperature (5, 13 and $21^{\circ}C$) on the metal AEs was not evident for most tested elements, except Cd AEs from sediment. The rate constant of metal uptake from the dissolved phase $(k_u)$ was greatest for Cd, followed by Zn and Cr in freshwater media. However, in saline water, the $(k_u)$ of Zn were greater than those of Cd. The influx rate of all tested metals increased with temperature. The efflux rate constant was greatest for Cr $(0.02\;d^{-1})$, followed by Zn $(0.010{\sim}0.017\;d^{-1})$ and $Cd\;(0.006\;d^{-1})$. The efflux rate constant for Zn in clam tissues depurated in 0 psu $(0.017\;d^{-1})$ was faster than that in 8 psu $(0.010\;d^{-1})$. Overall results showed that the variation of salinity and temperature in estuarine systems can considerably influence the metal bioaccumulation potential in the estuarine clam C. fluminea. The relatively high Cd accumulation capacity of C. fluminea characterized by the high AE, high dissolved influx rate and low efflux rate, suggested that this clam species can be used as an efficient biomonitor for the Cd contamination in freshwater and estuarine environments.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• Bulletin of the Society of Naval Architects of Korea
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• v.27 no.1
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• pp.57-62
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• 1990

This paper deals with the flow caused by a two-dimensional pulsating source, which moves with a constant horizontal speed beneath the free surface. The analysis is based on lincar potential theory including surface tension effects. In the case of subcritical reduced frequencies $\tau<1/4(\tau=U_{\omega}/g$, U=constant speed, $\omega$=circular frequency, g=gravitational acceleration), six wave components arc found. Two of them are largely affected by surface tension, which propagate ahead of the source in the direction of and opposite to the steady translation, respectively. The rest are almost identical with those found by Haskind(1954), i.e. for which the surface tension effect is negligible. For low oscillation frequencies, the resonant frequency still exists at $\tau$ only slightly greater than 1/4. For oscillation frequencies greater than $\nu(={\omega}^2/g)>20$, the surface tension effect is so significant that it disperses generated waves and consequently the singular phenomenon is removed. However, in addition to the gravity breaking, capillary breakings occur when the translation speed coincides with the minimum capillary celerity.

• Journal of the Korean Chemical Society
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• v.41 no.8
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• pp.385-391
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• 1997

Diffusion Coefficient$(D_0)$ and electrode reaction rate Constant$(K_0)$ of Co$(dimethyl bipyridine)_3(ClO_4)_2$ were determined by cyclic voltammetry and chronoamperometry. It was also investigated that the effects of solvent, concentration, and scan rate, etc. on the diffusion coefficient and the temperature effect on the rate constant. The peak currents and diffusion coefficients were dcreased as increasing the viscosity of solvent. Diffusion coefficient was $5.54{\times}10^{-6 }cm^2/sec$ and the reaction rate constant was $2.39{\times}10^{-3 }/s$ at 25$^{\circ}C$. The thermodynamic parameters such as ${\Delta}G^{\neq},\;{\Delta}H^{\neq},\;and\;{\Delta}S$ were calculated from plotting the reaction rate constants versus the solution temperatures. This compound was shown the catalytic effect on the oxygen reduction that the reduction peak current of oxygen was greatly enhanced and the peak potential was shifted to +0.2 volt.

• Solar Energy
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• v.10 no.3
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• pp.53-59
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• 1990

[ $CdSe_xTe_{1-x}$ ] ($0{\le}x{\le}1$) thin films were deposited cathodically on Ti substrates in aqueous sulfric acid solution containing 1M $CdSO_4$ and 1mM$(TeO_2+SeO_2)$. The limiting current was observed in deposition potential ranging from -0.20 to -0.65 vs.Ag/AgCl ; although its value has changed a little depending on the mole ratio x, the limiting current was almost constant in deposition potential of -0.45V in spite of the change of mole ratio x. The crystal structure of the $CdSe_xTe_{1-x}$ thin films was cubic zinc-blonde in the range of mole ratio $x=0{\sim}0.8$, and hexagonal wurtzite in the mole ratio x=1 When the mole ratio changed from x=0 to x=0.8, diffraction peaks was shifted to the larger diffraction angle.

• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.233-239
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• 2013

A quartz crystal microbalance (QCM) system coated with poly (isobutylene), polystyrene, and poly (methyl methacrylate) has been prepared to measure the adsorption amounts of benzene, toluene, and p-xylene at very low pressures. The resonant frequency shift of the QCM system is proportional to the increase in pressure in all experiments. The Henry's constants for all adsorbates on the polymer films are obtained from experimental data and compared with the minimum adsorption potential energies between adsorbates and the polymer films. In general, there is an explicit correlation between adsorption amount and the minimum adsorption potential energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.161-161
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• 2009

Ion bombarded inorganic materials for LC alignment has been researched as it provides controllability in a nonstop process for producing high-resolution displays. Many optically transparent insulators such as $SiOx$ and a-C:H have been investigated as potential candidates for inorganic alignment materials. Even so, LC orientation on a new material with superior capacity is required to produce high-performance displays. Many inorganic materials with high permittivities can reduce the voltage losses due to the LC alignment layer that are a trade-off for its capacitance. The minimum voltage for device operation can be applied to the LC under low external voltage using these materials. This means that low power consumption for LCD applications can be achieved using a high-k alignment structure in which the LC can be driven effectively with a low threshold voltage. Among the many other potential high-k oxides, HfO2 is considered to be one of the most promising due to its remarkable properties of high dielectric constant, relatively low leakage current, large band gap (5.68 eV), and high transparency. Due to these characteristics, HfO2 can be used in LC alignment to increase the capacitance of the inorganic alignment layer for low-voltage driving of LCs.