• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.251-255
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• 2021

a-Si is commonly considered as a primary candidate for the formation of passivation layer in heterojunction (HIT) solar cells. However, there are some problems when using this material such as significant losses due to recombination and parasitic absorption. To reduce these problems, a wide bandgap material is needed. A wide bandgap has a positive influence on effective transmittance, reduction of the parasitic absorption, and prevention of unnecessary epitaxial growth. In this paper, the adoption of a-SiO_x:H as the intrinsic layer was discussed. To increase lifetime and conductivity, oxygen concentration control is crucial because it is correlated with the thickness, bonding defect, interface density (D_it), and band offset. A thick oxygen-rich layer causes the lifetime and the implied open-circuit voltage to drop. Furthermore the thicker the layer gets, the more free hydrogen atoms are etched in thin films, which worsens the passivation quality and the efficiency of solar cells. Previous studies revealed that the lifetime and the implied voltage decreased when the a-SiOx thickness went beyond around 9 nm. In addition to this, oxygen acted as a defect in the intrinsic layer. The D_it increased up to an oxygen rate on the order of 8%. Beyond 8%, the D_it was constant. By controlling the oxygen concentration properly and achieving a thin layer, high-efficiency HIT solar cells can be fabricated.

• Korean Journal of Environmental Agriculture
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• v.33 no.4
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• pp.254-261
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• 2014

BACKGROUND: This study was conducted to investigate effects of silicate fertilizer application on red pepper (Capsicum annuum L.) productivity with improving soil chemistry under plastic film house in paddy field. METHODS AND RESULTS: The silicate fertilizer was applied as 0, 100, 200, and 300 kg/10a as basal dressing before transplanting pepper plant seedlings. Cultivar of the pepper plant was Cheon-Ha-Dae-Se. Amounts of inorganic fertilizer applied as $N-P_2O_5-K_2O$=19.0-6.4-10.1kg/10a was estimated depending on soil test values. After applying 50% of nitrogen, 100% of phosphorus, and 60% of potassium fertilizers as basal dressing, the seedlings of pepper plant were transplanted. The rests of nitrogen and potassium fertilizers were applied as side-dressing after the first, second, and fourth harvests of red pepper. When comparing selected chemical properties of soils between before transplanting and after final(the fifth) harvest, soil pH, available $P_2O_5$, and exchangeable $Ca^{2+}$ increased with increasing the applications of silicate fertilizer, whereas electrical conductivity(EC) decreased. However, exchangeable $K^+$ was higher with the treatments of 100 and 200 kg/10a, and exchangeable $Mg^{2+}$ was higher with 300 kg/10a application. In addition, nitrogen and phosphorus concentrations of red pepper collected from the first harvesting stage decreased with increasing the applications of silicate fertilizer, but potassium, calcium, and magnesium concentrations in red pepper were highest with 300 kg/10a application. Yield of red pepper increased between 9.0 and 11.8% with the applications of silicate fertilizer. Marketable fruit rate of res pepper was highest(97.3%) with 200 kg/10a application. CONCLUSION: The application of silicate fertilizer as basal dressing in paddy-converted fields improved soil chemistry and increased red pepper productivity.

• Korean Journal of Soil Science and Fertilizer
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• v.45 no.6
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• pp.1022-1026
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• 2012

To evaluate the application level of expeller cake fertilizer (ECF), we have investigated soil chemical properties, leaf mineral contents and yield of red mustard in plastic film greenhouse. Four levels of fertilizer were applied as 50% (ECF 50), 75% (ECF 75), 100% (ECF 100) and 150% (ECF 150) by base $1,848kg\;kg^{-1}$ of ECF. In 2010, red mustard was planted on April 28 in silt loam soil and harvested on July 7. Commerical yields were measured 12 times from May 14 to July 7. Electrical conductivity ($3.40{\sim}3.54dS\;m^{-1}$), available $P_2O_5$ ($580{\sim}618mg\;kg^{-1}$) and exchangeable cations ($K^+$, $Ca^{2+}$ and $Mg^{2+}$) were tended to increase by the application of ECF. However, the range of those was not so big increasing amount. The content of T-N, K, Ca and P of red mustard leaves was $63.2{\sim}66.4g\;kg^{-1}$, $55.1{\sim}56.4g\;kg^{-1}$, $8.6{\sim}9.5g\;kg^{-1}$ and $5.7{\sim}6.3g\;kg^{-1}$, respectively. The nitrogen utilization rate of red mustard was 38~52%, and it was decreased with increased application of ECF. The yield of red mustard was 13,670 to $14,460kg\;ha^{-1}$ on the basis of application amount of ECF and the yield did not increased in spite of increased ECF. The optimum dose of application of ECF for cultivation of red mustard was from $924kg\;ha^{-1}$ (ECF 50) to $1,386kg\;ha^{-1}$ (ECF 75). Environment-friendly and economical amount of applied fertilizer is more important than yield for cultivation of red mustard.

• Korean Journal of Environmental Agriculture
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• v.25 no.1
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• pp.64-70
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• 2006

This study was conducted to investigate the concentration of fertigation for optimum yield and soil management of tomato cultivation in soils with different Electrical conductivity (EC) level under PE film house. The EC levels of soil were adjusted to 1.4, 3.0 and 5.4 dS/m and fertigation concentrations were supplied with 0.0 (groundwater), 1.0, 2.0 and 3.0 dS/m, respectively. When the concentration of fertigation was supplied over 3.0 dS/m to soil with EC 1.4 dS/m, the concentrations of $NO_3-N,\;avail.-P_2O_5$, and exchangeable K in soil were increased after the experiment. When fertigation concentration was supplied over 2.0 and 1.0 ds/m to soil with EC 3.0 and 5.4 dS/m respectively, the nutrient were also accumulated in the soil. Thus, the optimum concentrations of fertigation for optimum yield and soil management for tomato cultivation were recommended $1.0{\sim}2.0dS/m$, 1.0 dS/m and ground water (0.0 dS/m) to soils with EC 1.4, 3.0 and 5.4 dS/m, respectively. The fruit weight marketability and marketable yield of tomato were not significant among the treatments at 5% level by LSD. The concentrations of T-N, $P_2O_5\;and\;K_2O$ in tomato leaf were increased with increasing of fertigation concentration whereas the concentrations of CaO and MgO decreased with increasing of fertigation concentration.

• Korean Journal of Soil Science and Fertilizer
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• v.26 no.3
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• pp.172-180
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• 1993

Chemical properties of the soils were surveyed in the field of vinyl houses concentrated in the area of Bunpyong-dong and Shinchon-dong of Cheongju, Chilgeum-dong of Chungju and Gageum-myeon of Jungweon-gun. Chungcheongbuk-do province. 1. Content of chemical component of the soil in the vinyl house was higher than in open field. In more than half of the vinyl house soils surveyed, electric conductivity was more than 4.0 mmhos/cm and available phosphate was more than 1,000ppm. 2. Contents of availble phosphate and exchangeable potassium were increased with years of cultivation and their content of accumulation in soil were in the order of Bunpyong-dong>Shinchon-dong>Gageum-myeon>Chilgeum-dong. While their mobility was comparatively low. 3. $NO_3$-N content was remarkably higher in vinyl house soil and the older in cultivation made $NO_3$-N content higher same as the case of available phosphate content. However easy leaching of $NO_3$-N through soil profile is expected due to the fact that $NO_3$-N content was rapidly decreased by removal of polyethylene film cover from the frame of house after harvest of crops. 4. It is a tendency that various chemical contents of vinyl house soils wer higher in 1992 than in 1988~1990, especially much higher from the area of Bunpyong-dong and Shinchon-dong of Cheongju. 5. Salt accumulation in vinyl house soil has been increased with continuing cultivation. Therefore amount of fertilizer application should be controlled in order to avoid salt toxicity, quality deterioration for crop and salt contamination of ground water.

• Solar Energy
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• v.20 no.2
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• pp.43-54
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• 2000

We prepared and characterized $Cu(In_{1-x}Ga_x)Se_2$(CIGS) films using a elemental co-evaporation method for absorbing layer of high efficiency thin film solar cells. The CIGS films deposited on a soda-lime glass exhibited low resistivity because of higher carrier concentration. Na was accumulated at the CIGS surface and the 0 and Se were also accumulated at the surface, suggesting that oxidation is a driving force of Na accumulation. The structure of CIGS film was modified or a secondary phase was formed in the Cu-poor CIGS bulk films probably due to the incorporation of Na into Cu vacancy sites. As the Ga/(In+Ga) ratio increased, the diffraction peaks of $Cu(In_{1-x}Ga_x)Se_2$ films were shifted to larger angle and splitted, and the grain size of $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films became smaller. All $Cu_{0.91}(In_{1-x}Ga_x)Se_2$ films showed the p-type conductivity regardless of the Ga/(In+Ga) ratio. Ag/n-ZnO/i-ZnO/CdS/$Cu_{0.91}(In_{0.7}Ga_{0.3})Se_2$/Mo solar cells were fabricated. The currently best efficiency in this study was 14.48% for $0.18cm^2$ area ($V_{oc}=581.5mV,\;J_{sc}=34.88mA$, F.F=0.714).

• Korean Journal of Soil Science and Fertilizer
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• v.39 no.6
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• pp.372-379
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• 2006

This study was carried out to improve chemical properties of salt-accumulated plastic film house soil. Compressed expansion rice hull was applied at 0, 2.5, 5.0, $7.5Mg\;ha^{-1}$, and drip irrigation was initiated at -33 kilopascals (kPa) of soil water potential and ceased adjusted up to -10 kPa. Another treatment was the application of inflated rice hull at $5.0Mg\;ha^{-1}$ with drip irrigation starting at soil water potential -20 kPa and adjusted to -10 kPa. Lettuce(Lactuca sativa L.) was cultivated at sandy loam soil with $5.1dS\;m^{-1}$ of electrical conductivity (EC). $EC_w$(1:5) of plots treated with $5.0Mg\;ha^{-1}$ of inflated rice hull and irrigated at the point of -20 kPa and -33 kPa of soil water potential was reduced by 26% and 24% less than untreated control plot, respectively. Soil $EC_w$(1:5) has close relationship with $Cl^-$ as well as $NO_3{^-}-N$ and $SO{_4}^{2-}$ in the soil. Total nitrogen in leaf of lettuce was deficient in the earlier growth stage. The yield of lettuce increased by 6% by the application of inflated rice hull of $5.0Mg\;ha^{-1}$ with drip irrigation starting at -33 kPa of soil water potential. It decreased 4% when the drip irrigation was stated at -20 kPa of soil water potential. The amount of water used for irrigation was reduced with the increasing application of inflated rice hull. The watering initiated at the point of -33 kPa was more economical compared with starting at -20 kPa.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.7
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• pp.7-14
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• 2009

In this paper, the effects of annealing conditions on the structural ((002) intensity, FWHM, d-spacing, grain size, (002) peak position), optical (UV peak, UV peak position) and electrical properties (carrier concentrations, resistivity, mobility) of ZnO films were investigated. ZnO films were deposited onto SiO$_2$/si substrates by RF magnetron sputtering from a ZnO target. The substrate was not heated during deposition. ZnO films were annealed in temperature ranges of $500\sim650^{\circ}C$ in the O$_2$ flow for 5$\sim$20 min. The film average thicknesses were in the range of 291 nm. The surface morphologies and structures of the samples were characterize by SEM and XRD, respectively. The optical properties were evaluated by photoluminescence (PL) measurement at room temperature (RT) using a He-Cd 325 nm laser. As the annealing temperature and time vary, the following relations were also observed: (1) proportional relationships among UV intensity (002) intensity, and grain size exist, (2) UV intensity is inversely proportional to FWHM, (3) there is no special relationship between UV intensity and electron carrier concentrations, (4) d-spacing is inversely proportional to (002) peak position, (5) UV peak position in the range of 3.20$\sim$3.24 eV means that ZnO films have a n-type conductivity which was consistent with that obtained from the electrical property, (6) the optimal conditions for the best optical and structural characteristics were found to be oxygen fraction, (O$_2$/(O$_2$+Ar)) of 0.2, RF power of 240W, substrate temperature of RT, annealing condition of 600$^{\circ}C$ for 20 min, and sputtering pressure of 20 mTorr.