Fabrication of engineered tunnel-barrier memory with $SiO_2/HfO_2/Al_2O_3$ tunnel layer
($SiO_2/HfO_2/Al_2O_3$ 적층구조 터널링 절연막을 적용한 차세대 비휘발성 메모리의 제작)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2009.06a
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- pp.129-130
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- 2009