• Polymer(Korea)
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• v.24 no.4
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• pp.564-570
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• 2000

The waste FRP occured in the fabrication of SMC (sheet molding compound) bathtubs and the waste polyurethane foam occured in electronic manufacture and waste insulator were applied as a soundproof and light weight pannel in the waste FRP unsaturated polyester matrix resin composites to recycle. The effect of filler contents on the mechanical properties and interfacial phenomena of the filler and matrix on the composites was evaluated. The tensile strength of composites reached its maximum value of 82.34 MPa when the filler content was 70 wt%, and the more content of reinforcement is increased, the more tensile modulus was decreased. The flexural strength and modulus of composites, reinforced 70 wt% with filler content, were dominant compared to the other samples to 72.5 MPa, 958.4 MPa respectively. When composite of reinforced 70 wt% with filler content, it was confirmed that pull out phenomena and cracks did not occur in the interface of reinforcement and matrix resin through the SEM observation. Also, waste FRP and urethane foam were dispersed well into matrix resin as filler.

• Journal of Powder Materials
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• v.21 no.5
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• pp.355-359
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• 2014

Pt nanopowder-dispersed $SiO_2$ (SOP) films were prepared by RF co-sputtering method using Pt and $SiO_2$ targets in Ar atmosphere. The growth rate and Pt content in the film were controlled by means of manipulating the RF power of Pt target while that of $SiO_2$ was fixed. The roughness of the film was increased with increasing the power of Pt target, which was mainly due to the increment of the size and planar density of Pt nanopowder. It was revealed that SOP film formed at 10, 15, 20 W of Pt power contained 2.3, 2.7, and 3.0 nm of spherical Pt nanopowder, respectively. Electrical conductivity of SOP films was exponentially increased with increasing Pt power as one can expect. Interestingly, conductivity of SOP films from Hall effect measurement was greater than that from DC I-V measurement, which was explained by the significant increase of electron density.

• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.5
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• pp.943-951
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• 1992

The objectives of this study are to analyse the thermal response behavior occurring in the charring ablative material more realistically by considering ablation and char phenomena occurring in several material layers, and to increase the reliability of thermal analysis by being able to get stable solutions through using the finite analytic method. A program has been developed to predict the temperature distribution, ablation thickness, char thickness, ablation velocity and char velocity by solving non-linear one-dimensional heat conduction equation. Results of calculation were compared with results of published papers. From this compariosn this program was proved to be a very good tool for thermal design and analysis of charring ablative materials used in the rocket propulsion system.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.220-220
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• 2011

The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).