• 제목/요약/키워드: Common-Gate

검색결과 187건 처리시간 0.024초

비휘발성 단일트랜지스터 강유전체 메모리 회로 (Memory Circuit of Nonvolatile Single Transistor Ferroelectric Field Effect Transistor)

  • 양일석;유병곤;유인규;이원재
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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    • pp.55-58
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    • 2000
  • This paper describes a single transistor type ferroelectric field effect transistor (1T FeFET) memory celt scheme which can select one unit memory cell and program/read it. To solve the selection problem of 1T FeEET memory cell array, the row direction common well is electrically isolated from different adjacent row direction column. So, we can control voltage of common well line. By applying bias voltage to Gate and Well, respectively, we can implant IT FeEET memory cell scheme which no interface problem and can bit operation. The results of HSPICE simulations showed the successful operations of the proposed cell scheme.

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AC-3와 MPEG-2 오디오 공용 복호화기의 설계 (A design of dual AC-3 and MPEG-2 audio decoder)

  • 고우석;유선국;박성욱;정남훈;김준석;이근섭;윤대희
    • 한국통신학회논문지
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    • 제23권6호
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    • pp.1433-1442
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    • 1998
  • The thesis presents a dual audio decoder which can decode both AC-3 and MPEG-2 bitstream. The MPEG-2 synthesis processi s optimized via FFT to establish the common data path with AC-'3s. A dual audio decoder consists of a DSP core which performs the control-intensive part of each algorithm and a common synthesis filter which perfomrs the computation-intensive part. All the components of the dual audio decoder have been described in VHDL and simulated with a SYNOPSYS tool. The software modeling of the DSP core was used for functional validation. After being synthesized using 0.6 .mu.m-3ML technology standard cell, the dual audio decoder was simulated at gate-level with a COMPASS tool for hardware validation.

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거동모델을 이용한 무선랜용 MMIC 가변이득 저잡음 증폭기 설계 (Design of MMIC Variable Gain LNA Using Behavioral Model for Wireless LAM Applications)

  • 박훈;윤경식;황인갑
    • 한국통신학회논문지
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    • 제29권6A호
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    • pp.697-704
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    • 2004
  • 본 논문에서 0.5$\mu\textrm{m}$ GaAs MESFET을 이용하여 5GHz대 무선랜에 사용 가능한 MMIC 가변이득 저잡음 증폭기를 설계 및 제작하였다. 이득과 잡음성능이 우수한 증가형 GaAs MESFET과 선형성이 좋은 공핍형 MESFET 조합의 캐스코드 구조로 저잡음 증폭기를 설계하기 위하여 Turlington의 점근선법을 이용하여 MESFET의 비선형 전류 전압특성에 대한 거동 모델 방정식을 도출하였다. 이로부터 캐스코드 증폭기의 공통 소오스 FET는 4${\times}$50$\mu\textrm{m}$ 크기의 증가형 MESFET으로 공통 게이트 FET는 2${\times}$50$\mu\textrm{m}$ 크기의 공핍형 MESFET으로 설계하였다. 제작된 가변이득 저잡음 증폭기의 잡음지수는 4.9GHz에서 2.4dB, 가변 이득범위는 17dB이상, IIP3는 -4.8dBm이며, 12.8mW의 전력을 소비하였다.

Grounded-Plate PMOS 게이트 강유전체 메모리 셀을 이용한 새로운 FRAM 설계기술에 관한 연구 (A Feasibility Study on Novel FRAM Design Technique using Grounded-Plate PMOS-Gate Cell)

  • Chung, Yeonbae
    • 대한전자공학회논문지SD
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    • 제39권12호
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    • pp.1033-1044
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    • 2002
  • 본 논문에서는 grounded-plate PMOS 게이트 (GPPG) 강유전체 메모리 셀을 이용한 새로운 FRAM 설계기술을 제안하였다 GPPG 셀은 PMOS와 강유전체 커패시터로 구성되며 셀 plate 는 ground 에 접지 된다. 제안된 FRAM 에서는 비트라인이 V/sub DD/로 precharge 되고, negative 전압 워드라인 기법이 사용되며, negative 펄스 restore 동작을 이용한다 GPPG 셀을 이용한 FRAM 구조는 셀 plate 구동기폭 사용하지 않으므로 메모리 셀 efficiency를 극대화 할 수 있는 장점이 있다. 또한 기존의 common-plate 셀과는 달리 제안된 FRAM 구조는 데이터의 읽기 및 쓰기 동작 시 강유전체 커패시터에 V/sub DD/거 충분한 전압이 가해지므로 저 전압 동작에 제한이 없다. 아울러 제안된 FRAM 구조는 필요한 8 비트 데이터만 선택하는 column-path 회로를 사용하므로 메모리 array 전력소모를 최소화 할 수 있다. 끝으로 0.5-um, triple-well/1-polycide/2-metal 공정을 이용한 4-Mb FRAM 설계를 통해 GPPG 셀 FRAM architecture 실현 가능성을 확인하였다.

고속 스위칭 Voltage Down Converter 회로 설계에 대한 연구 (Circuit Design of Voltage Down Converter for High Speed Application)

  • 이승욱;김명식
    • 전자공학회논문지SC
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    • 제38권2호
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    • pp.38-49
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    • 2001
  • 본 논문은 IC chip내에서 전압을 낮추는 목적으로 사용되는 VDC 회로의 주파수 특성을 향상시키기 위한 새로운 회로를 제안한다. 제안된 회로에는 적응 바이어싱 방법을 통해 저전력소모 및 고속동작을 동시에 만족하는 두 개의 센서와 이 센서로 구동되는 3개의 transistor가 부가적으로 첨가되어 구동 transistor의 gate 충.방진 전류를 보상하여 구동회로의 정상동작을 유지시켜준다. 본 연구에 사용된 회로는 $0.62{\mu}m$ N well CMOS 공정을 사용하였으며, H spice simulation 결과, 내부전압의 변화폭은 부하전류가 0에서 $200m{\Lambda}$까지 5ns동안 증가할 경우 약 1.0V로, $200m{\Lambda}$에서 0으로 감소할 경우 약 0.6V로, 내부전압 회복시간은 증가시 7ns, 감소시 10ns로, 일반적인 구동방식에 비해 성능이 향상되었으며 전체 회로에 소모하는 power는 약 1.2mW로 매우 작았다.

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전기수지자극의 통증관리효과 -척추후궁절제술 환자의 수술 후 통증과 경추부 염좌환자에 대한 통증관리효과- (The Effect of Acupuncture-like TENS on Finger Control Gate -Patients with cervical sprain and postoperative pain of laminectomy-)

  • 이상훈;김성곤;우남식;이예철;장상근;김선복
    • The Korean Journal of Pain
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    • 제9권1호
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    • pp.140-144
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    • 1996
  • Electrical stimulation is a common method for successful pain management for both acute and a some cases of chronic pain. The incidence of cervical sprain is very high with automobile accidents. Treatment of cervical sprain is consists of analgesic drugs and physical therapy. Lower back pain is a common problem in pain clinics. back pain management are complex, so we have difficulty to choose best treatment modality. The prevalence of herniated lumbar disc(HLD) is 1~3% of lower back pain. The cases of laminectomy varies between 10~20% and postoperative pain is prolonged for several day. We applied Acupuncture like TENS (ALTENS) on the digit for cervical sprain patients and post laminectomy pain patient for three days. The result was very satisfactory. And we found that total hospital days in ALTEND groups are shorter than control group in both disease entities. In conclusion, acupuncture like TENS on finger control gate is an effective method of the pain management.

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An Active Voltage Doubling Rectifier with Unbalanced-Biased Comparators for Piezoelectric Energy Harvesters

  • Liu, Lianxi;Mu, Junchao;Yuan, Wenzhi;Tu, Wei;Zhu, Zhangming;Yang, Yintang
    • Journal of Power Electronics
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    • 제16권3호
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    • pp.1226-1235
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    • 2016
  • For wearable health monitoring systems, a fundamental problem is the limited space for storing energy, which can be translated into a short operational life. In this paper, a highly efficient active voltage doubling rectifier with a wide input range for micro-piezoelectric energy harvesting systems is proposed. To obtain a higher output voltage, the Dickson charge pump topology is chosen in this design. By replacing the passive diodes with unbalanced-biased comparator-controlled active counterparts, the proposed rectifier minimizes the voltage losses along the conduction path and solves the reverse leakage problem caused by conventional comparator-controlled active diodes. To improve the rectifier input voltage sensitivity and decrease the minimum operational input voltage, two low power common-gate comparators are introduced in the proposed design. To keep the comparator from oscillating, a positive feedback loop formed by the capacitor C is added to it. Based on the SMIC 0.18-μm standard CMOS process, the proposed rectifier is simulated and implemented. The area of the whole chip is 0.91×0.97 mm2, while the rectifier core occupies only 13% of this area. The measured results show that the proposed rectifier can operate properly with input amplitudes ranging from 0.2 to 1.0V and with frequencies ranging from 20 to 3000 Hz. The proposed rectifier can achieve a 92.5% power conversion efficiency (PCE) with input amplitudes equal to 0.6 V at 200 Hz. The voltage conversion efficiency (VCE) is around 93% for input amplitudes greater than 0.3 V and load resistances larger than 20kΩ.

A Feedback Wideband CMOS LNA Employing Active Inductor-Based Bandwidth Extension Technique

  • Choi, Jaeyoung;Kim, Sanggil;Im, Donggu
    • 스마트미디어저널
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    • 제4권2호
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    • pp.55-61
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    • 2015
  • A bandwidth-enhanced ultra-wide band (UWB) CMOS balun-LNA is implemented as a part of a software defined radio (SDR) receiver which supports multi-band and multi-standard. The proposed balun-LNA is composed of a single-to-differential converter, a differential-to-single voltage summer with inductive shunt peaking, a negative feedback network, and a differential output buffer with composite common-drain (CD) and common-source (CS) amplifiers. By feeding the single-ended output of the voltage summer to the input of the LNA through a feedback network, a wideband balun-LNA exploiting negative feedback is implemented. By adopting a source follower-based inductive shunt peaking, the proposed balun-LNA achieves a wider gain bandwidth. Two LNA design examples are presented to demonstrate the usefulness of the proposed approach. The LNA I adopts the CS amplifier with a common gate common source (CGCS) balun load as the S-to-D converter for high gain and low noise figure (NF) and the LNA II uses the differential amplifier with the ac-grounded second input terminal as the S-to-D converter for high second-order input-referred intercept point (IIP2). The 3 dB gain bandwidth of the proposed balun-LNA (LNA I) is above 5 GHz and the NF is below 4 dB from 100 MHz to 5 GHz. An average power gain of 18 dB and an IIP3 of -8 ~ -2 dBm are obtained. In simulation, IIP2 of the LNA II is at least 5 dB higher than that of the LNA I with same power consumption.

Cascaded Propagation and Reduction Techniques for Fault Binary Decision Diagram in Single-event Transient Analysis

  • Park, Jong Kang;Kim, Myoungha;Kim, Jong Tae
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권1호
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    • pp.65-78
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    • 2017
  • Single Event Transient has a critical impact on highly integrated logic circuits which are currently common in various commercial and consumer electronic devices. Reliability against the soft and intermittent faults will become a key metric to evaluate such complex system on chip designs. Our previous work analyzing soft errors was focused on parallelizing and optimizing error propagation procedures for individual transient faults on logic and sequential cells. In this paper, we present a new propagation technique where a fault binary decision diagram (BDD) continues to merge every new fault generated from the subsequent logic gate traversal. BDD-based transient fault analysis has been known to provide the most accurate results that consider both electrical and logical properties for the given design. However, it suffers from a limitation in storing and handling BDDs that can be increased in size and operations by the exponential order. On the other hand, the proposed method requires only a visit to each logic gate traversal and unnecessary BDDs can be removed or reduced. This results in an approximately 20-200 fold speed increase while the existing parallelized procedure is only 3-4 times faster than the baseline algorithm.

순천왜성(順天倭城)의 구조(構造)와 축성방법(築城方法)에 대한 조사연구 (A Study of The Suncheon-Japanese Castle)

  • 천득염;조준익;정철성
    • 건축역사연구
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    • 제10권2호
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    • pp.21-34
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    • 2001
  • The purpose of this study is that it is made clear the construction method of Japanese Castle Architecture in Korea as I study the construction method of Suncheon-Japanese Castle(順天倭城) in those days of Jeong-yu Japanese Invasion. Moreover, I intend to analyze the similarity and the difference between Suncheon-Japanese Castle and Korean Castle Architecture by a comparative study. The result of the study is showed that Suncheon-Japanese Castle seemed to be built with the object of a long time stay rather than it was of strategic importance for the national defense. In addition, it was different from other Japanese Castle in Korea because the watch tower(天守閣) of it stood in the middle of stronghold and the watch tower stronghold dividing the round of it while that of it stood the comer of stronghold. The face stone used in important part of watch tower, gate, and so on was mostly a trimed hexangular stone. On the other hand, the face abbuting on the Gulf of kwang-yang was made of naturally wild face stone. The stone cleared traces of Si-hyeol(矢穴) and domestic Castle in Japan was also made of this method after Im-Jin Japanese Invasion. According to the construction method, the wall of castle made use of the Netak(內托) method except the gate, the support stronghold and the watch. The early mountain castle in Korea have this construction method in common.

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