• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1290-1292
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• 1995

A cylindrical-post magnetron sputtering system was designed for pipe inner coating. The discharge condition was depended on the gas pressure, magnetic field and pipe diameter. At given discharge current, discharge voltage increased a little with pipe diameter. The electron temperature and floating potential increased with magnetic field. The impact ion energy on the pipe increased with bias voltage. The TiN thin-film of $2{\mu}m$ thickness was formed by cylindrical-post magnetron sputtering system under the conditions of the pressure of 5mTorr, the applied voltage of 700V, the discharge current of 500mA, the magnetic field of 300G, and the bias voltage of -100V.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.168.2-168.2
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• 2014

반사방지막 코팅(Anti-reflection coating)은 태양전지(Solar cell), 발광다이오드(LED) 등의 반사율을 낮추어 효율을 증대시키기 위하여 사용되고 있다. 본 실험에서는 유리 기판 위에 실리콘 타겟을 이용한 반응성 high power impulse magnetron sputtering (HIPIMS) 장비를 활용하여, 높은 공정 압력(High-pressure)에서 펄스폭(Pulse width)을 조절하여 $SiO_2$ 반사방지막 코팅층을 형성하였다. 또한, 기공이 더 많은 박막을 제작하기 위해 빗각증착(Oblique-angle deposition)을 적용하여 더 좋은 광학 특성을 갖는 반사방지막 코팅층을 형성하였다. UV-Vis spectrometer를 이용하여, 380~800 nm 파장에서 투과율(Transmittance)을 측정하여 비교, 분석하였다. Ellipsometer를 이용하여 $SiO_2$ 박막층의 굴절률(Refractive index)을 측정한 결과, 반사방지막 코팅층 내부 기공에 따라 다양한 굴절률을 가지는 것을 확인할 수 있었다. 또한, 코팅층 내부 기공의 형상을 확인하기 위해 SEM(Secondary electron microscopy)을 활용하여 코팅층 단면(Cross section)을 측정하였다. 이를 활용하여 낮은 굴절률을 갖는 반사방지용 $SiO_2$ 코팅층을 형성하여 태양전지의 광 변환 효율을 상승 시킬 수 있고, 발광다이오드의 광 추출 효율을 증가시킬 있을 것으로 여겨진다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.231-231
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• 2013

반사방지막 코팅(Anti-reflection coating)은 태양전지(Solar cell), 발광다이오드(LED) 등의 반사율을 낮추어 효율을 증대시키기 위하여 사용되고 있다. 본 실험에서는 유리 기판 위에 실리콘 타겟을 이용한 Reactive magnetron sputtering 장비를 활용하여, 50~100 mTorr의 높은 공정 압력(High pressure)에서 Ar：O2 유량비를 변화시키며 증착하여 SiO2 반사방지막 코팅층을 형성하였다. Ellipsometer를 이용하여 SiO2 박막층의 굴절률(Refractive index)을 측정한 결과, 공정 압력과 Ar：O2 유량비에 따라 SiO2 박막이 다양한 굴절률을 가지는 것을 확인할 수 있었다. 또한, UV-Vis spectrometer를 이용하여, 190~1,100 nm 파장에서의 반사율(Reflectance)과 투과율(Transmittance)을 측정하여 비교, 분석하였다. 나아가 증착된 SiO2 반사방지막을 비정질 실리콘 박막 태양전지에 적용하여 효율 향상 효과를 실험하였다. 이를 활용하여 낮은 굴절률을 갖는 반사방지용 SiO2 코팅층을 형성하여 태양전지의 광 변환 효율을 상승 시킬 수 있고, 발광다이오드의 광 추출 효율을 증가시킬 있을 것으로 여겨진다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.863-867
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• 2008

In this paper, to increase the light current efficiency of photodiode, we fabricated aluminum-doped zinc oxide(AZO) thin films by RF magnetron sputtering. AZO thin films were deposited at low temperature of 100 $^{\circ}C$ and different RF powers of 50, 100, 150 and 200 W due to selective process technology. Then the AZO thin films were annealed at 400 $^{\circ}C$ for 1 hr in vacuum ambient to increase crystalline. The lowest resistivity of 1.35 ${\times}$ $10^{-3}$ ${\Omega}cm$ and a high transmittance over 90 % were obtained under the conditions of 3 mTorr, 100 'c and 150 W. The optimized AZO thin films were deposited as anti-reflection coating on PN junction of silicon photodiode. It was confirmed by the result of $V_r-I_{ph}$ curve that the efficiency of photodiode with AZO thin film was enhanced 17 % more than commercial photodiode.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.391-391
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• 2010

초전도 가속공동기의 소재는 순수 Nb로 제작하는 것이 일반적이다. 그러나 극저온 (2-4.5K)에서 열전도도가 낮아서 순간적인 Normal zone이 발생되면 이를 원활이 냉각되지 못하여 Quench로 발생 가능성이 높다. 초전도 가속공동기는 약 3 mm 두께의 Nb 판을 이용하는데, 500 MHz 공동기의 전자기장의 침투깊이가 불과 수 nm에 불과해서 나머지 부분은 사실상 불필요한 부분이다. 따라서 이 경우 매우 비싼 초전도 공동기 소재의 낭비가 매우 심하다. 또 Nb 판으로 공동기를 제작할 경우 매우 비싸고 시간이 많이 소요되는 전자빔용접을 해야 하고 또 제작 후 표면처리가 매우 번거롭고 장시간을 요한다. 이러한 단점을 보완하기 위해서 구리판으로 성형가공법을 이용하여 공동기를 제작하고, 내부의 RF 표면에 수 ${\mu}m$ 두께의 Nb 코팅을 한 공동기를 개발하여 CERN의 LEP에 설치하여 실용화하였다. 이렇게 하여 소재비용을 포함한 초전도 공동기 제작, 표면처리 비용 절감은 만족할 만한 결과를 얻었다. 구리의 높은 열전도에 의한 고 가속전기장의 기대와 달리 가속전기장이 최고 약 7 MV/m 정도로 제한되었다. 그후 꾸준히 연구개발을 진행하여 현재 약 22 MV/m 까지 기록하고 있으나, 순수 Nb 공동기의 약 50 MV/m에 비하면 현저히 낮은 수준이다. 본 연구는 Nb 코팅법을 이용하여 Nb 코팅 초전도 공동기의 한계를 넓히기 위한 것이다. 본 발표는 "Sputtering 법에 의한 초전도 Nb coating 소재의 RF 한계 극복 연구"의 기초연구 결과를 보고하고자 한다.

• Journal of the Korean Physical Society
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• v.73 no.9
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• pp.1351-1355
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• 2018

The photocurrent characteristics of zinc-oxide (ZnO) thin-film transistors (TFTs) prepared using radio-frequency sputtering and spin-coating methods were investigated. Various characterization methods were used to compare the physical and the chemical properties of the sputtered and the spin-coated ZnO films. X-ray photoelectron spectroscopy was used to investigate the chemical composition and state of the ZnO films. The transmittance and the optical band gap were measured by using UV-vis spectrometry. The crystal structures of the prepared ZnO films were examined by using an X-ray diffractometer, and the surfaces of the films were investigated by using scanning electron microscopy. ZnO TFTs were prepared using both sputter and solution processes, both of which showed photocurrent characteristics when illuminated by light. The sputtered ZnO TFTs had a photoresponsivity of 3.08 mA/W under illumination with 405-nm light while the solution-processed ZnO TFTs had a photoresponsivity of 5.56 mA/W. This study provides useful information for the development of optoelectronics based on ZnO.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.124-124
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• 2003

To improve the electrochemical properties of thin-film LiCoO$_2$ cathodes, metal oxides were coated on the LiCoO$_2$ thin films using f sputtering. Galvanostatic charge-discharge experiments showed the enhanced cycling behaviors in the metal-oxide coated LiCoO$_2$ thin films than the uncoated ones. These results are because the metal-oxide coating layer suppresses the degradation of Li-diffusion kinetics during cycling, which is related to the protection of cathode surface from the electrolytes [l-3]. The variation in the metal-oxide coating thickness ranging from 10 to 300 nm did not affect the electrochemical properties. Changes of lattice constants in the coated and bare LiCoO$_2$ thin films at different charged states will also be discussed.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1155-1156
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• 2015

This study demonstrates hybrid-type transparent electrodes for touch screen panels. The hybrid-type electrodes were fabricated by coating carbon nanotubes (CNTs) on metal meshes. For the formation of metal meshes, thin films of silver (Ag) were deposited on glass substrates using a sputtering method and then pattenrned via photolithography to obtain mesh structures of which line width was $10{\mu}m$ and line-to-line spacing was $300{\mu}m$. CNTs were coated on Ag meshes by using electrophoretic deposition (EPD). For the samples of Ag meshes with/without CNTs, their surface morphologies, visible-range transmittances, and reflectances were characterized and compared. The experimental results indicated that the reflectance of Ag mesh electrodes was substantially reduced by coating of CNTs. Especially, the hybrid electrodes of Ag meshes with EPD-coated CNTs showed excellent properties such as transmittance higher than 90%, reflectance lower than 8%.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.178-181
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• 2005

Quaternary Ti-Si-C-N coatings were deposited on WC-Co substrates by a hybrid coating system of arc ion plating (AIP) and sputtering techniques using Ti and Si targets, in an $Ar/N_2/CH_4$ gaseous mixture. The crystallinity, bending status, and microstructure of the Ti-Si-C-N coatings were measured by X-ray diffractometer (XRD) and X-ray photoelectron spectroscope (XPS), The micro-hardness of Ti(C,N) and Ti-Si-N coatings were about 30 and 40 GPa, respectively. As the Si was incorporated into Ti(C,N) coatings, the Ti-Si-C-N coatings having Si content of $8.9\;at.\%$ showed the maximum hardness value of about 55 GPa. In this work, the microstructure and mechanical properties of Ti-Si-C-N coatings were systematically investigated.

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.292-300
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• 2008

Dental implant system is composed of abutment, abutment screw and implant fixture connected with screw. The problems of loosening/tightening and stability of abutment screw depend on surface characteristics, like a surface roughness, coating materials and friction resistance and so on. For this reason, surface treatment of abutment screw has been remained research problem in prosthodontics. The purpose of this study was to investigate the stability of TiN and WC coated dental abutment screw, abutment screw was used, respectively, for experiment. For improving the surface characteristics, TiN and WC film coating was carried out on the abutment screw using EB-PVD and sputtering, respectively. In order to observe the coating surface of abutment screw, surfaces of specimens were characterized, using field emission scanning electron microscope(FE-SEM) and energy dispersive x-ray spectroscopy(EDS). The stability of TiN and WC coated abutment screw was evaluated by potentiodynamic, and cyclic potentiodynamic polarization method in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion potential of TiN coated specimen was higher than those of WC coated and non-coated abutment screw. Whereas, corrosion current density of TiN coated screws was lower than those of WC coated and non-coated abutment screw. The stability of screw decreased as following order; TiN coating, WC coating and non-coated screw. The pitting potentials of TiN and WC coated specimens were higher than that of non-coated abutment screw, but repassivation potential of WC coated specimen was lower than those of TiN coated and non-coated abutment screws due to breakdown of coated film. The degree of local ion dissolution on the surface increased in the order of TiN coated, non-coated and WC coated screws.