• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.208-211
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• 2000

We prepared Co-Cr-Ta and Co-Cr-Ta/Ti thin film for perpendicular magnetic recording media by facing targets sputtering system (FTS system). Ti underlayer effects on crystallographic and magnetic characteristics of Co-Cr-Ta perpendicular magnetic recording media have been investigated. Crystallgraphic and magnetic characteristic of prepared thin films were evaluated by x-ray diffractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement. The coercivity and anisotropy field increase by introduced Ti underlayer when substrate temperature is higher than 150$^{\circ}C$. The c-axis dispersion angle and grain size of Co-Cr-Ta/Ti thin film is decrease than Co-Cr-Ta when substrate temperature is higher than 100$^{\circ}C$. Consequently, the use of a Ti underlayer highly orientated can be improved crystallographic and magnetic characteristics of Co-Cr -Ta perpendicular media layer.

• 전자공학회논문지A
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• 제33A권11호
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• pp.105-111
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• 1996

We have invetigated the characteristics of thermal instability of Co-silicides annealed at 850$^{\circ}$C ~ 1000$^{\circ}$C for 10~90 minutes in a furance with N$_{2}$ ambient. In our experiments, Co-silicides and Co/Ti bilayer silicides were formed by depositing (Co, Ti) films on the clean Si substrates in an E-beam evaporator and performing the RTA annelaing. The sheet resistances of Co-silicides formed form Co exhibited the nearly constant value under the post-annealing time above 900$^{\circ}$C showing the increase of 30% and 60% under the conditions annealed at 900$^{\circ}$C and 1000$^{\circ}$C for 30minutes. On the other hand, there were no remarkable changes in the sheet resistance sof Co-silicides formed form Co/Ti bilayer under the post-annealing conditons below 1000$^{\circ}$C.

• 공업화학
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• 제29권6호
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• pp.657-662
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• 2018

본 연구에서는, $Pt/TiO_2$ 촉매의 물리화학적 특성이 CO 상온산화 반응에 미치는 영향을 조사하기 위하여 각기 다른 물리적 특성을 가지는 다양한 $TiO_2$ 지지체를 이용하여 $Pt/TiO_2$ 촉매를 제조한 후 평가하였다. 촉매의 물리화학적 특성을 조사하기 위하여 XPS, CO-chemisorption, BET, CO-TPD 분석을 수행하였다. 그 결과, active particle diameter가 작을수록, metal dispersion, surface area가 클수록 우수한 CO 상온산화 반응을 나타내었다. 이러한 물리적 특성은 active site의 수를 증진시켜 대상물질은 CO의 흡착량의 증가를 야기시켰다. 또한, $O_2$-consumption이 클수록 우수한 산소 전달 능력을 통해 보다 높은 CO 상온산화 반응활성을 나타내었다.

• 한국세라믹학회지
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• 제16권4호
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• pp.225-236
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• 1979

The effect of $Ti^{+4}$ addition on the sinterability, microstructure, and temperature dependence of electromechanical coupling factor of magnetostrictive Ni-Cu-Co ferrite was investigated. The density of Ni-Cu-Co ferrite slightly increased by 2.0 mole % addition of either $TiO_2$ or $Fe_2TiO_4$, but tended to decrease by more than 2.0 mole % addition of $TiO_2$ or $Fe_2TiO_4$. As the content of either $TiO_2$ or $Fe_2TiO_4$ increased, the magnetocrystalline anisotropy compensation temperature also increased. Microstructure studies showed the stable grains when Ni-Cu-Co ferrite was sintered above 1, 20$0^{\circ}C$.

• 한국환경과학회지
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• 제14권2호
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• pp.221-230
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• 2005

Catalytic wet oxidation of trichloroethylene (TCE) in water has been conducted using $TiO_2-supported$ cobalt oxides at $36^{\circ}C$ with a weight hourly space velocity of $7,500\;h^{-1}.\;5\%\;CoO_x/TiO_2$, prepared by using an incipient wetness technique, might be the most promising catalyst for the wet oxidation although it exhibited a transient behavior in time on-stream activity. Not only could the bare support be inactive for the wet decomposition reaction, but no TCE removal also occurred by the process of adsorption on $TiO_2$ surface. The catalytic activity was independent of all particle sizes used, thereby representing no mass transfer limitation in intraparticle diffusion. XPS spectra of both fresh and used Co surfaces gave different surface spectral features for each $CoO_x,\;Co\;2P_{3/2}$ binding energy for Co species in the fresh catalyst appeared at 781.3 eV, which is very similar to the chemical states of $CoTiO_x$ such as $CO_2TiO_4\;and\;CoTiO_3$. The used catalyst exhibited a 780.3-eV main peak with a satellite structure at 795.8 eV. Based on XPS spectra of reference Co compound, the TCE-exposed Co surfaces could be assigned to be in the form of mainly $Co_3O_4$. XRD patterns for $5\%\;CoO_x/TiO_2$ catalyst indicated that the phase structure of Co species in the catalyst even before reaction is quite comparable to the diffraction lines of external $Co_3O_4$ standard. A model structure of $CoO_x$ present predominantly on titania surfaces would be $Co_3O_4$, encapsulated in thin-film $CoTiO_x$ species consisting of $Co_2TiO_4$ and $CoTiO_3$, which may be active for the decomposition of TCE in a flow of water.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.390-396
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• 2003

As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

• Bulletin of the Korean Chemical Society
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• 제34권12호
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• pp.3635-3640
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• 2013

We prepared Ni and Pd-modified $TiO_2@SiO_2$ core-shell nanostructures and then analyzed them by scanning electron microscopy, optical microscopy, X-ray diffraction crystallography, FT-IR and UV-Visible absorption spectroscopy. In addition, their CO oxidation performance was tested by temperature-programmed mass spectrometry. The CO oxidation activity showed an order of Ni-$TiO_2@SiO_2$ ($900^{\circ}C$) < Ni-$TiO_2@SiO_2$ ($90^{\circ}C$) < Ni-$TiO_2@SiO_2$ ($450^{\circ}C$) in the first CO oxidation run, and greatly improved activity in the same order in the second run. The $T_{10%}$ (the temperature at 10% CO conversion) corresponds to the CO oxidation rate of $2.8{\times}10^{-5}$ molCO $g{_{cat}}^{-1}s^{-1}$. For Ni-$TiO_2@SiO_2$ ($450^{\circ}C$), the $T_{10%}$ was observed at $365^{\circ}C$ in the first run and at $335^{\circ}C$ in the second run. For the Pd-$TiO_2@SiO_2$ ($450^{\circ}C$), the $T_{10%}$ was observed at a much lower temperature of $263^{\circ}C$ in the first CO oxidation run, and at $247^{\circ}C$ in the second run. The CO oxidation activities of transition metal modified $TiO_2@SiO_2$ core-shell nanostructures presented herein provide new insights that will be useful in developing catalysts for various environments.

• 한국진공학회지
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• 제9권4호
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• pp.335-340
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• 2000

코발트실리사이드형성에 있어서 Capping layer로써의 Ti의 역할에 대한 연구를 수행하였다. 실리콘 산화막이 제거된 Si(100)기판과 $H_2SO_4$에 의한 chemical oxide를 형성한 Si(100)기판 위에 Co와 Ti를 증착한 후 열처리 온도 증가에 따른 계면반응과 상변화 등의 미세구조와 면저항 특성의 변화를 four point prove, XRD, TEM, SIMS등의 분석을 통하여 TiN capping, capping layer가 없는 경우에 대하여 비교하였다. 실리콘 산화막이 제거된 Si 기판 상에서 Ti capping의 경우 TiN capping, capping layer가 없는 경우보다 높은 온도에서 $CoSi_2$상이 형성되었으며, chemical oxide가 형성된 Si 기판 상에서는 Ti capping의 경우 코발트 실리사이드 박막을 형성 할 수 있었다. 이것은 capping layer인 Ti가 1차 RTA(Rapid Thermal Annealing)동안 Si 기판 방향으로 확산 침투하여 Co와 Si 사이에 존재하는 실리콘 산화막을 분해하는 역할을 하기 때문이다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1999년도 춘계연구발표회 논문개요집
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• pp.22-23
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• 1999

• 한국자기학회지
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• 제23권1호
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• pp.7-11
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• 2013

본 연구에서는 $TiO_2$/Co/Pd 구조의 다층박막을 마그네트론 스퍼터링으로 GaAs(100), MgO(100), MgO(111), Si(100), glass와 같은 다양한 종류의 기판에 대해 제작하여 수직 자기 이방성에 대해서 연구하였다. 산소 분압 등의 $TiO_2$ 층의 증착 조건과 기판의 종류에 따른 Co/Pd 층의 수직 자기 이방성을 측정하였다. 그 결과, $TiO_2$ 층이 5 nm 이하 일 때는 기판의 종류에 영향을 받지만, 그 이상의 두께에 대해서는 MgO(111)을 제외한 기판의 영향이 크지 않음을 확인하였고, 이는 $TiO_2$ 씨앗층의 성장조건과 계면의 거칠기, 결정방향 등과 관련이 있음을 발견하였다.