• 제목/요약/키워드: Clock Inverter

검색결과 21건 처리시간 0.021초

단자속 양자 DFFC와 Inverter의 설계와 측정 (Design and Measurement of SFQ DFFC and Inverter)

  • 정구락;홍희송;박종혁;임해용;강준희;한택상
    • Progress in Superconductivity
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    • 제5권1호
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    • pp.17-20
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    • 2003
  • We have designed and measured a SFQ(Single Flux Quantum) DFFC and an Inverter(NOT) for superconducting ALU(Arithmetic Logic Unit) development. To optimize the circuit, we used Julia, XIC, and L meter for circuit simulations and circuit layouts. The Inverter was consisted of a D Flip-Flop, a data input, a clock input and a data output. If a data pulse arrives at the inverter, then the output reads ‘0’ (no output pulse is produced) at the next clock period. If there is no input data pulse, it reads out ‘1’(output pulse is produced). The DFFC was consisted of a D flip-Flop, an Inverter, a Data in, a Clock in and two outputs. If a data pulse arrives at the DFFC circuit, then the output2 reads ‘1’ at the next clock period, otherwise it reads out ‘1’ to output1. Operation of the fabricated chip was performed at the liquid helium temperature and at the frequencies of 1KHz.

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Compact Power-on Reset Circuit Using a Switched Capacitor

  • Seong, Kwang-Su
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권5호
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    • pp.625-631
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    • 2014
  • We propose a compact power-on reset circuit consisting of a switched capacitor, a capacitor, and a Schmitt trigger inverter. A switched capacitor working with a clock signal charges the capacitor. Thus, the voltage across the capacitor is increased toward the supply voltage. The circuit provides a reset pulse until the voltage across the capacitor reaches the high threshold voltage of the Schmitt trigger inverter. The proposed circuit is simple, compact, has no static power consumption, and works for a wide range of power-on rising times. Furthermore, the clock signal is available while the reset pulse is activated. The proposed circuit works for up to 6 s of power-on rising time, and occupies a $60{\times}30{\mu}m^2$ active area.

저전압 DRAM용 VPP Generator 설계 (A VPP Generator Design for a Low Voltage DRAM)

  • 김태훈;이재형;하판봉;김영희
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2007년도 추계종합학술대회
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    • pp.776-780
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    • 2007
  • 본 논문에서는 저전압 DRAM용 VPP Generator의 전하펌프회로(Charge Pump Circuit)를 새롭게 제안하였다. 제안된 전하펌프회로는 2-Stage 크로스 커플 전하펌프회로(Cross-Coupled Charge Pump Circuit)이다. 4개의 비중첩 클럭신호들을 이용하여 전하전달 효율을 향상시켰고, 각 전하펌프단 마다 Oscillation 주기를 줄일 목적으로 Distributed Clock Driver인 Inverter 4개를 추가하여 펌핑전류(Pumping Current)를 증가시켰다. 그리고 전하전달 트랜지스터의 게이트단에 프리차지회로 (Precharge Circuit)를 두어 대기모드진입 시 펌핑된 전하를 방전하지 못하고 고전압을 유지하여 소자의 신뢰성을 떨어트리는 문제를 해결하였다. 모의실험결과 펌핑전류, 펌핑효율(Pumping Efficiency), 파워효율(Power Efficiency) 모두 향상된 것을 확인하였고, $0.18{\mu}m$ Triple-Well 공정을 이용하여 Layout 하였다.

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Synchronizer의 Metastable 현상 및 그의 개선 방법에 관한 연구 (A Study on the Metastabel Phenomena and its Improvement Method in the Synchronizer)

  • 정연만;이종각
    • 대한전자공학회논문지
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    • 제14권5호
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    • pp.1-6
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    • 1977
  • synchronizer의 입력단에 비동기된 두 신호가 인가되었을 때 일어나는 Metastable 현상에 대한 회로의 해석과 Metastable point에서 stable state로 천이되는 과정에서 일어나는 현상을 해석하였으며, 이러한 mishappen 상태에 의해 기인하는 logic failure를 개선하기 위한 방법으로써, Inverter Method, open collector Method를 사용하여 올바른 논리를 이론과 실험을 통하여 구현하였다.

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Harmonic Locking을 제거하기 위한 아날로그 Multi- phase DLL 설계 (An Analog Multi-phase DLL for Harmonic Lock Free)

  • 문장원;곽계달
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.281-284
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    • 2001
  • This paper describes an analog multi-phase delay-locked loop (DLL) to solve the harmonic lock problem using current-starved inverter and shunt-capacitor delay cell. The DLL can be used not only as an internal clock buffer of microprocessors and memory It's but also as a multi-phase clock generator for gigabit serial interfaces. The proposed circuit was simulated in a 0.25${\mu}{\textrm}{m}$ CMOS technology to solve harmonic lock problem and to realize fast lock-on time and low-jitter we verified time interval less than 40 ps as the simulation results.

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64-위상 출력 클럭을 가지는 125 MHz CMOS 지연 고정 루프 (A 125 MHz CMOS Delay-Locked Loop with 64-phase Output Clock)

  • 이필호;장영찬
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2012년도 추계학술대회
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    • pp.259-262
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    • 2012
  • 본 논문에서는 125 MHz 동작 주파수에서 64개 위상의 클럭을 출력하는 지연 고정 루프 (DLL: delay-locked loop)을 제안한다. 제안된 다중 지연 고정 루프는 delay line의 선형성을 개선하기 위해 $4{\times}8$ matrix 구조의 delay line을 사용한다. CMOS multiplexer와 inverter-based interpolator를 이용하여 $4{\times}8$ matrix 기반의 delay line에서 출력된 32개 위상의 클럭으로부터 64개 위상의 클럭을 생성한다. 또한 DLL에서 harmonic lock을 방지하기 위해 클럭의 duty cycle ratio에 무관한 initial phase locking을 위한 회로가 제안된다. 제안된 지연 고정 루프는 1.8 V의 공급전압을 이용하는 $0.18-{\mu}m$ CMOS 공정에서 설계된다. 시뮬레이션된 DLL은 40 MHz에서 200 MHz의 동작 주파수 범위를 가진다. 125 MHz 동작 주파수에서 최악의 위상 오차와 jitter는 각각 +11/-12 ps와 6.58 ps이다.

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TG Inverter VCDL을 사용한 광대역 Dual-Loop DLL (A Wide-Range Dual-Loop DLL using VCDL with Transmission Gate Inverters)

  • 이석호;김삼동;황인석
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.829-832
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    • 2005
  • This paper describes a wide-range dual-loop Delay Locked Loop (DLL) using Voltage Controlled Delay Line (VCDL) based on Transmission Gate(TG) inverters. One loop is used when the minimum VCDL delay is greater than a half of $T_{REF}$, the reference clock period. The other loop is initiated when the minimum delay is less than $0.5{\times}T_{REF}$. The proposed VCDL improves the dynamic operation range of a DLL. The DLL with a VCDL of 10 TG inverters provides a lock range from 70MHz to 700MHz when designed using $0.18{\mu}m$ CMOS technology with 1.8 supply voltage. The DLL consumes 11.5mW for locking operation with a 700MHz reference clock. The proposed DLL can be used for high-speed memory devices and processors, communication systems, high-performance display interfaces, etc.

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Delay Monitor Scheme을 사용한 Register Controlled Delay-locked Loop (Register Controlled Delay-locked Loop using Delay Monitor Scheme)

  • 이광희;노주영;손상희
    • 한국전기전자재료학회논문지
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    • 제17권2호
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    • pp.144-149
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    • 2004
  • Register Controlled DLL with fast locking and low-power consumption, is described in this paper. Delay monitor scheme is proposed to achieve the fast locking and inverter is inserted in front of delay line to reduce the power consumption, also. Proposed DLL was fabricated in a 0.6${\mu}{\textrm}{m}$ 1-poly 3-metal CMOS technology. The proposed delay monitor scheme enables the DLL to lock to the external clock within 4 cycles. The power consumption is 36㎽ with 3V supply voltage at 34MHz clock frequency.

티타늄 살리사이드 공정을 이용한 트랜지스터의 특성 및 오실레이터 I.C에의 적용(I) (Characteristic of Transistor Using Ti-SALICIDE Process and Its Application to Oscillator I,C(I))

  • 이상흥;구경완;홍봉식
    • 전자공학회논문지A
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    • 제28A권11호
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    • pp.910-914
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    • 1991
  • This paper describes the improvement of frequency characteristic of crystal oscillator I.C using Ti-Salicide. The characteristics of transistor(drive current) using Ti-Salicide process are better than Poly-Si process, because the mobility. To know frequency characteristic of oscillator I.C, the simulation is performed using inverter buffer chain of Fan-out 10 TTL. Its result shows at once the generation of normal clock pulse in input signal and the improvement of rising and falling time.

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A 12-bit Hybrid Digital Pulse Width Modulator

  • Lu, Jing;Lee, Ho Joon;Kim, Yong-Bin;Kim, Kyung Ki
    • 한국산업정보학회논문지
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    • 제20권1호
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    • pp.1-7
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    • 2015
  • In this paper, a 12-bit high resolution, power and area efficiency hybrid digital pulse width modulator (DPWM) with process and temperature (PT) calibration has been proposed for digital controlled DC-DC converters. The hybrid structure of DPWM combines a 6-bit differential tapped delay line ring-mux digital-to-time converter (DTC) schema and a 6-bit counter-comparator DTC schema, resulting in a power and area saving solution. Furthermore, since the 6-bit differential delay line ring oscillator serves as the clock to the high 6-bit counter-comparator DTC, a high frequency clock is eliminated, and the power is significantly saved. In order to have a simple delay cell and flexible delay time controllability, a voltage controlled inverter is adopted to build the deferential delay cell, which allows fine-tuning of the delay time. The PT calibration circuit is composed of process and temperature monitors, two 2-bit flash ADCs and a lookup table. The monitor circuits sense the PT (Process and Temperature) variations, and the flash ADC converts the data into a digital code. The complete circuits design has been verified under different corners of CMOS 0.18um process technology node.