• Progress in Superconductivity
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• v.5 no.1
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• pp.17-20
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• 2003

We have designed and measured a SFQ(Single Flux Quantum) DFFC and an Inverter(NOT) for superconducting ALU(Arithmetic Logic Unit) development. To optimize the circuit, we used Julia, XIC, and L meter for circuit simulations and circuit layouts. The Inverter was consisted of a D Flip-Flop, a data input, a clock input and a data output. If a data pulse arrives at the inverter, then the output reads ‘0’ (no output pulse is produced) at the next clock period. If there is no input data pulse, it reads out ‘1’(output pulse is produced). The DFFC was consisted of a D flip-Flop, an Inverter, a Data in, a Clock in and two outputs. If a data pulse arrives at the DFFC circuit, then the output2 reads ‘1’ at the next clock period, otherwise it reads out ‘1’ to output1. Operation of the fabricated chip was performed at the liquid helium temperature and at the frequencies of 1KHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.625-631
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• 2014

We propose a compact power-on reset circuit consisting of a switched capacitor, a capacitor, and a Schmitt trigger inverter. A switched capacitor working with a clock signal charges the capacitor. Thus, the voltage across the capacitor is increased toward the supply voltage. The circuit provides a reset pulse until the voltage across the capacitor reaches the high threshold voltage of the Schmitt trigger inverter. The proposed circuit is simple, compact, has no static power consumption, and works for a wide range of power-on rising times. Furthermore, the clock signal is available while the reset pulse is activated. The proposed circuit works for up to 6 s of power-on rising time, and occupies a $60{\times}30{\mu}m^2$ active area.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.776-780
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• 2007

In this paper, the charge pump circuit of a VPP generator for a low voltage DRAM is newly proposed. The proposed charge pump is a 2-stage cross coupled charge pump circuit. The charge transfer efficiency is improved, and Distributed Clock Inverter is located in each charge pump stage to reduce clock period so that the pumping current is increased. In addition, the precharge circuit is located at Gate node of charge transfer transistor to solve the problem which is that the Gate node is maintained high voltage because the boosted charge can't discharge, so device reliability is decreased. The simulation result is that pumping current, pumping efficiency and power efficiency is improved. The layout of the proposed VPP generator is designed using $0.18{\mu}m$ Triple-Well process.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.5
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• pp.1-6
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• 1977

When the input of synchronizer which is used for the purpose of synchronizing the master clock of computer with the interrupt system, a sort of random variable device, is gated with asynchronous intersection of the fall time of the master clock and the risetime oi the interrupt request, synchronizer is drived in Metastable region. This paper is presented circuit analysis of Metastable phenomena and analysis for transient process from metastable point to stable state, and also realities the collect logic with Inverter and open collector methods with a view to improving logic failure caused by the mishappen phenomena.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.281-284
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• 2001

This paper describes an analog multi-phase delay-locked loop (DLL) to solve the harmonic lock problem using current-starved inverter and shunt-capacitor delay cell. The DLL can be used not only as an internal clock buffer of microprocessors and memory It's but also as a multi-phase clock generator for gigabit serial interfaces. The proposed circuit was simulated in a 0.25${\mu}{\textrm}{m}$ CMOS technology to solve harmonic lock problem and to realize fast lock-on time and low-jitter we verified time interval less than 40 ps as the simulation results.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.259-262
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• 2012

This paper describes a delay-locked loop (DLL) that generates a 64-phase clock with the operating frequency of 125MHz. The proposed DLL use a $4{\times}8$ matrix-based delay line to improve the linearity of a delay line. The output clock with 64-phase is generated by using a CMOS multiplex and a inverted-based interpolator from 32-phase clock which is the output clock of the $4{\times}8$ matrix-based delay line. The circuit for an initial phase lock, which is independent on the duty cycle ratio of the input clock, is used to prevent from the harmonic lock of a DLL. The proposed DLL is designed using a $0.18-{\mu}m$ CMOS process with a 1.8 V supply. The simulated operating frequency range is 40 MHz to 200 MHz. At the operating frequency of a 125 MHz, the worst phase error and jitter of a 64-phase clock are +11/-12 ps and 6.58 ps, respectively.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.829-832
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• 2005

This paper describes a wide-range dual-loop Delay Locked Loop (DLL) using Voltage Controlled Delay Line (VCDL) based on Transmission Gate(TG) inverters. One loop is used when the minimum VCDL delay is greater than a half of $T_{REF}$, the reference clock period. The other loop is initiated when the minimum delay is less than $0.5{\times}T_{REF}$. The proposed VCDL improves the dynamic operation range of a DLL. The DLL with a VCDL of 10 TG inverters provides a lock range from 70MHz to 700MHz when designed using $0.18{\mu}m$ CMOS technology with 1.8 supply voltage. The DLL consumes 11.5mW for locking operation with a 700MHz reference clock. The proposed DLL can be used for high-speed memory devices and processors, communication systems, high-performance display interfaces, etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.144-149
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• 2004

Register Controlled DLL with fast locking and low-power consumption, is described in this paper. Delay monitor scheme is proposed to achieve the fast locking and inverter is inserted in front of delay line to reduce the power consumption, also. Proposed DLL was fabricated in a 0.6${\mu}{\textrm}{m}$ 1-poly 3-metal CMOS technology. The proposed delay monitor scheme enables the DLL to lock to the external clock within 4 cycles. The power consumption is 36㎽ with 3V supply voltage at 34MHz clock frequency.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.910-914
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• 1991

This paper describes the improvement of frequency characteristic of crystal oscillator I.C using Ti-Salicide. The characteristics of transistor(drive current) using Ti-Salicide process are better than Poly-Si process, because the mobility. To know frequency characteristic of oscillator I.C, the simulation is performed using inverter buffer chain of Fan-out 10 TTL. Its result shows at once the generation of normal clock pulse in input signal and the improvement of rising and falling time.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.1
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• pp.1-7
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• 2015

In this paper, a 12-bit high resolution, power and area efficiency hybrid digital pulse width modulator (DPWM) with process and temperature (PT) calibration has been proposed for digital controlled DC-DC converters. The hybrid structure of DPWM combines a 6-bit differential tapped delay line ring-mux digital-to-time converter (DTC) schema and a 6-bit counter-comparator DTC schema, resulting in a power and area saving solution. Furthermore, since the 6-bit differential delay line ring oscillator serves as the clock to the high 6-bit counter-comparator DTC, a high frequency clock is eliminated, and the power is significantly saved. In order to have a simple delay cell and flexible delay time controllability, a voltage controlled inverter is adopted to build the deferential delay cell, which allows fine-tuning of the delay time. The PT calibration circuit is composed of process and temperature monitors, two 2-bit flash ADCs and a lookup table. The monitor circuits sense the PT (Process and Temperature) variations, and the flash ADC converts the data into a digital code. The complete circuits design has been verified under different corners of CMOS 0.18um process technology node.