• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 F
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• pp.2243-2245
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• 1997

With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. EP is usually used for air cleaning in the coal power plant. One of the key technology in the EP is high voltage pulse power supply, which affects the performance of the overall system. In this study, high voltage micro pulse power supply for the EP will be developed for a 500MW coal power plant, which is recently developed technology in the advanced nations. The technology developed will contribute in upbringing the export of heavy electric systems and production of high value-added products.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 F
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• pp.2623-2625
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• 1999

With the increasing demands for clean environment, development of air cleaning systems has been received increasing attention. EP is usually used for air cleaning in the coal power plant. One of the key technology in the EP is high voltage pulse power supply, which affects the performance of the overall system. In this study, high voltage micro pulse power supply for the pilot EP is developed. The power supply has a de source and a pulse one. The ratings of the dc and pulse source are 60kV and 70kV respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• 에너지공학
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• 제28권1호
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• pp.57-64
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• 2019

본 연구에서는 산업용 발전설비 부품의 곡면을 표면처리 하기 위한 브라스팅 노즐을 설계한 후 압축성 유동해석을 통해 분사 성능을 살펴보았다. 이때 곡면 노즐의 출구는 부품의 표면을 따라 곡면으로 설계되었다. 3차원 프린팅으로 노즐을 제작한 후 실린더형 시편의 표면에 연마재를 분사하여 세정 성능시험을 수행하였다. 해석 후 얻은 유효 세정 면적과 실험 후 얻은 유효 세정 면적의 크기와 형상이 유사하였으며 이로부터 곡면형 노즐 설계의 타당성 및 실효성을 확인하였다.

• 반도체디스플레이기술학회지
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• 제22권2호
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• pp.17-23
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• 2023

In semiconductor manufacturing processes, a cleaning process is important that can remove sub-micron particles. Conventional wet cleaning methods using chemical have limits in removing nano-particles. Thus, physical forces of a mechanical vibration up to 1 MHz frequency, was tried to aid in detaching them from the substrates. In this article, we developed a 1 MHz quartz megasonic for a bare wafer cleaning using finite element analysis. At first, a 1 MHz megasonic prototype was manufactured. Using the results, a main product which can improve a particle removal performance, was analyzed and designed. The maximum impedance frequency was 992 kHz, which agreed well with the experimental value of 986 kHz (0.6% error). Acoustic pressure distributions were measured, and the result showed that maximum / average was 400.0~432.4%, and standard deviation / average was 46.4~47.3%. Finally, submicron particles were deposited and cleaned for the assessment of the system performance. As a result, the particle removal efficiency (PRE) was proved to be 92% with 11 W power. Reflecting these results, the developed product might be used in the semiconductor cleaning process.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2003년도 춘계전력전자학술대회 논문집(1)
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• pp.260-263
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• 2003

When ICP(Inductive Coupled Plasma type etching and wafer manufacturing is being processed in semiconductor process, a noxious gas in PFC and CFC system is generated. Gas cleaning dry scrubber is to remove this noxious gas. This paper describes a power source device, 2MHz switching frequency class 2kW RF Generator, used as a main power source of the gas cleaning dry scrubber. The power stage of DC/DC converter is consist of full bridge type converter with 100kHz switching frequency Power amplifier is push pull type inverter with 2MHz switching frequency, and transmission line transformer. The adequacy of the circuit type and the reliability of generating plasma in various load conditions are verified through 50$\Omega$ dummy load and chamber experiments result.

• 한국초전도ㆍ저온공학회논문지
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• 제23권3호
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• pp.14-19
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• 2021

The reduction of carbon dioxide emissions becomes a global issue, the main source of carbon dioxide emissions in the Asian region is the energy conversion sector, especially coal-fired power plants. We are working to develop technologies that will at least limit the increase in carbon dioxide emissions from the thermal power plants as one way to reduce carbon dioxide emissions. Our research aims to reduce carbon dioxide emissions by removing iron oxide scale from the feedwater system of thermal power plants using a superconducting high-gradient magnetic separation (HGMS) system, thereby reducing the loss of power generation efficiency. In this paper, the background of thermal power plants in Asia is outlined, followed by a case study of the introduction of a chemical cleaning line at an actual thermal power plant in Japan, and the possibility of introducing it into the thermal power plants in China based on the results.

• 청정기술
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• 제7권3호
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• pp.203-214
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• 2001

플라즈마를 발생시키는 반응기체의 종류에 따라 실리콘 산화막 세정에 어떠한 영향을 미치는지에 대해 연구하였다. 압력 (100 mTorr), 전력 (300 W, 500 W), 전극간 거리 (5, 8, 11.5 cm), 세정시간 (90초, 180초), 가스유량 (50sccm) 등의 변수들을 고정시키고 $CHF_3$, $CF_4$, 아르곤, 산소 등의 세정가스를 변화시키며 세정성능을 비교하였다. 세정결과 아르곤 플라즈마는 단지 물리적인 스퍼터링 효과만으로 세정속도가 느렸다. 산소 플라즈마는 5cm 전극거리, 300W, 180초 세정시 좋은 세정효과를 내었으나, 표면거칠기가 증가하였다. $CF_4$ 플라즈마의 경우 가장 좋은 세정효과를 얻었다. $CHF_3$ 플라즈마는 CFx/F의 비율을 낮출 수 있는 첨가기체가 필요함을 알 수 있었다. $CHF_3$에 아르곤을 첨가하였을 경우에는 원활한 세정효과를 얻을 수 없었으나, 산소를 첨가하였을 경우 좋은 세정효과를 얻을 수 있었다.

• 청정기술
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• 제3권2호
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• pp.36-46
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• 1997

CFC 및 유기염소계 용제는 정밀기기 및 전자산업에서 세정제로 여러 가지 우수한 성질이 있어 오랫동안 사용하여 왔지만 오존층을 파괴하는 물질로 규명되어 대체 세정제로의 사용이 불가피한 실정이다. 대체 세정제로서는 여러 종류가 있지만 수계/준수계 세정제가 환경친화적이라 장기적으로 가장 바람직하여 이의 사용과 개발이 선진국을 중심으로 점차 증가일로에 있다. 그러나 이에 대한 국내의 이용 및 연구는 빈약하다. 본 연구에서는 수계세정제중 알칼리성, 중성, 산성, 비휑금형과 이의 주요구성성분, 그리고 준수계세정제중 테르펜계 및 glycol ether계를 분석하였다. 또한 수계/준수계세정제를 사용함으로써 이용가능한 여러 세정장치를 비교평가하였고 산업체에서 세정시스템의 선정시 중요 고려사항을 분석제안하였다.

• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.21-27
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• 2023

In this article, a plate-type megasonic cleaning system with cooling pins is proposed for the sliced ingot, which is a raw material of silicon (Si) wafers. The megasonic system is operated with a lead zirconate titanate (PZT) actuator, which has high electric resistance, thus when it is being operated, it dissipates much heat. So this article proposes a megasonic system with cooling pins. In the design process, finite element analysis was performed and the results were used for the design of the waveguide. The frequency with the maximum impedance value was 998 kHz, which agreed well with the measured value of 997 kHz with 0.1 % error. Based on the results, the 1 MHz waveguide was fabricated. Acoustic pressures were measured, and analyzed. Finally, cleaning tests were performed, and 90 % particle removal efficiency (PRE) was achieved over 10 W power. These results imply that the developed 1 MHz megasonic will effectively clean sliced ingot wafer surfaces.