• Title/Summary/Keyword: Class-E power amplifier

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Reliability Characteristics of Class-E Power Amplifier using Class-F Driving Circuit (Class-F 구동회로를 사용하는 Class-E 전력 증폭기의 신뢰성)

  • Choi, Jin-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.6
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    • pp.287-290
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    • 2006
  • A class-E CMOS RF(Radio frequency) power amplifier with a 1.8 Volt power supply is designed using $0.25{\mu}m$ standard CMOS technology. To drive the class-E power amplifier, a Class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. After one year of operating the power amplifier with an RF choke, the PAE(Power Added Efficiency) decreases from 60% to 47% and the output power decreases 29%. However, when a finite DC-feed inductor is used with the load, the PAE decreases from 60% to 53% and the output power decreases only 19%. The simulated results demonstrate that the class-E power amplifier with a finite DC-feed inductor exhibits superior reliability characteristics.

Reliability Evaluation of RF Power Amplifier for Wireless Transmitter

  • Choi, Jin-Ho
    • Journal of information and communication convergence engineering
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    • v.6 no.2
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    • pp.154-157
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    • 2008
  • A class-E RF(Radio Frequency) power amplifier for wireless application is designed using standard CMOS technology. To drive the class-E power amplifier, a class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. The reliability characteristic is improved when a finite-DC feed inductor is used instead of an RF choke with the load. After one year of operating, when the load is an RF choke the output current and voltage of the power amplifier decrease about 17% compared to initial values. But when the load is a finite DC-feed inductor the output current and voltage decrease 9.7%. The S-parameter such as input reflection coefficient(S11) and the forward transmission scattering parameter(S21) is simulated with the stress time. In a finite DC-feed inductor the characteristics of S-parameter are changed slightly compared to an RF-choke inductor. From the simulation results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to power amplifier using an RF choke.

Wireless Energy Transmission High-Efficiency DC-AC Converter Using High-Gain High-Efficiency Two-Stage Class-E Power Amplifier

  • Choi, Jae-Won;Seo, Chul-Hun
    • Journal of electromagnetic engineering and science
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    • v.11 no.3
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    • pp.161-165
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    • 2011
  • In this paper, a high-efficiency DC-AC converter is used for wireless energy transmission. The DC-AC convertter is implemented by combining the oscillator and power amplifier. Given that the conversion efficiency of a DC-AC converter is strongly affected by the efficiency of the power amplifier, a high-efficiency power amplifier is implemented using a class-E amplifier structure. Also, because of the low output power of the oscillator connected to the input stage of the power amplifier, a high-gain two-stage power amplifier using a drive amplifier is used to realize a high-output power DC-AC converter. The high-efficiency DC-AC converter is realized by connecting the oscillator to the input stage of the high-gain high-efficiency two-stage class-E power amplifier. The output power and the conversion efficiency of the DC-AC converter are 40.83 dBm and 87.32 %, respectively, at an operation frequency of 13.56 MHz.

Class-E Power Amplifier with Minimal Standby Power for Wireless Power Transfer System

  • Kim, Bong-Chul;Lee, Byoung-Hee
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.250-255
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    • 2018
  • This paper presents a method for minimizing standby power consumption in wireless power transfer (WPT) system via magnetic resonance coupling (MRC) that operates at 6.78 MHz. The proposed circuit controls the required capacitance according to operational condition in order to reduce standby power consumption. Based on an impedance characteristic of the class-E power amplifier, operational principles of the proposed circuit are analyzed. Moreover, to verify the effectiveness of the proposed class-E power amplifier, an 8 W prototype for WPT system is implemented. The measured input power of the proposed class-E power amplifier at standby condition is reduced from 5.81 W to 3.53 W.

Reliability Characteristics of Class-E Power Amplifier with load Inductor (부하 인덕터에 따른 Class-E 전력 증폭기의 신뢰성 특성)

  • Choi Jin-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.2
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    • pp.68-71
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    • 2006
  • A class-E power amplifier is designed using 0.25$\mu$m standard CNMOS technology at 900MHz and the reliability characteristics are studied with the load network. The reliability characteristics is improved when a finite DC-feed inductor is used instead of RF choke. At the one you halt, the PAE(Power Added Efficiency) decreases from 58.0$\%$ to 35.7$\%$ and output power decreases from 120mW to 74mW in power amplifier using RF choke. However, when a finite DC-feed inductor is used with load the PAE decreases from 58.5$\%$ to 54.8$\%$ and output power decreases from 121mW to 112mW. From the simulated results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to rower amplifier using RF choke inductor.

Design of High Efficiency CMOS Class E Power Amplifier for Bluetooth Applications

  • Chae Seung Hwan;Choi Young Shig;Choi Hyuk Hwan;Kim Sung Woo;Kwon Tae Ha
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.499-502
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    • 2004
  • A two-stage Class E power amplifier operated at 2.44GHz is designed in 0.25-$\mu$m CMOS process for Class-l Bluetooth application. The power amplifier employs c1ass-E topology to exploit its soft-switching property for high efficiency. A preamplifter with common-mode configuration is used to drive the output-stage of Class-E type. The amplifier delivers 20-dBm output power with 70$\%$ PAE (power -added-efficiency) at 2-V supply voltage.

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A Highly Efficient Broadband Class-E Power Amplifier with Nonlinear Shunt Capacitance

  • Dang-Duy, Ninh;Ha-Van, Nam;Jeong, Daesik;Kim, Dong Hwan;Seo, Chulhun
    • Journal of electromagnetic engineering and science
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    • v.17 no.4
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    • pp.221-227
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    • 2017
  • A new approach to designing a broadband and highly efficient class-E power amplifier based on nonlinear shunt capacitance analysis is proposed. The nonlinear shunt capacitance method accurately extracts optimum class-E power amplifier parameters, including an external shunt capacitance and an output impedance, at different frequencies. The dependence of the former parameter on the frequency is considered to select an optimal value of external shunt capacitor. Then, upon determining the latter parameter, an output matching network is optimized to obtain the highest efficiency across the bandwidth of interest. An analytical approach is presented to design the broadband class-E power amplifier of a MOSFET transistor. The proposed method is experimentally verified by a 140-170 MHz class-E power amplifier design with maximum added power efficiency of 82% and output power of 34 dBm.

A Two-Stage Power Amplifier with a Latch-Structured Pre-Amplifier (래치구조의 드라이브 증폭단을 이용한 2단 전력 증폭기)

  • Choi Young-Shig;Choi Heyk-Hwan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.2
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    • pp.295-300
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    • 2005
  • In this paper we have designed a two-stage Class I power amplifier operated at 2.4CHz for Class-1 Bluetooth application. The power amplifier employs class-I topology to exploit its soft-switching property for high efficiency. The latch-structured pre-amplifier with amplifiers makes its output signal as sharp as possible for soft switching of the next power amplifier. It improves the overall efficiency of the proposed power amplifier. It shows 65.8$\%$ PAE, 20dB power gain and 20dBm output power.

Research on PAE of CMOS Class-E Power Amplifier For Multiple Antenna System (다중 안테나 시스템을 위한 CMOS Class-E 전력증폭기의 효율 개선에 관한 연구)

  • Kim, Hyoung-Jun;Joo, Jin-Hee;Seo, Chul-Hun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.45 no.12
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    • pp.1-6
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    • 2008
  • In this paper, bias control circuit structure have been employed to improve the power added efficiency of the CMOS class-E power amplifier on low input power level. The gate and drain bias voltage has been controlled with the envelope of the input RF signal. The proposed CMOS class-E power amplifier using bias controlled circuit has been improved the PAE on low output power level. The operating frequency is 2.14GHz and the output power is 22dBm to 25dBm. In addition to, it has been evident that the designed the structure has showed more than a 80% increase in PAE for flatness over all input power level, respectively.

Design of High Efficiency Switching Mode Class E Power Amplifier and Transmitter for 2.45 GHz ISM Band (2.45 GHz ISM대역 고효율 스위칭모드 E급 전력증폭기 및 송신부 설계)

  • Go, Seok-Hyeon;Koo, Kyung-Heon
    • Journal of Advanced Navigation Technology
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    • v.24 no.2
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    • pp.107-114
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    • 2020
  • A power amplifier of 2.4 GHz ISM band is designed to implement a transmitter system. High efficiency amplifiers can be implemented as class E or class F amplifiers. This study has designed a 20 W high efficiency class E amplifier that has simple circuit structure in order to utilize for the ISM band application. The impedance matching circuit was designed by class E design theory and circuit simulation. The designed amplifier has the output power of 44.2 dBm and the power added efficiency of 69% at 2.45 GHz. In order to apply 30 dBm input power to the designed power amplifier, voltage controlled oscillator (VCO) and driving amplifier have been fabricated for the input feeding circuit. The measurement of the power amplifier shows 43.2 dBm output and 65% power added efficiency. This study can be applied to the design of power amplifiers for various wireless communication systems such as wireless power transfer, radio jamming device and high power transmitter.