• Title/Summary/Keyword: Circuits

Search Result 4,523, Processing Time 0.032 seconds

New Test Generation for Sequential Circuits Based on State Information Learning (상태 정보 학습을 이용한 새로운 순차회로 ATPG 기법)

  • 이재훈;송오영
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.25 no.4A
    • /
    • pp.558-565
    • /
    • 2000
  • While research of ATPG(automatic test pattern generation) for combinational circuits almost reaches a satisfiable level, one for sequential circuits still requires more research. In this paper, we propose new algorithm for sequential ATPG based on state information learning. By efficiently storing the information of the state searched during the process of test pattern generation and using the state information that has been already stored, test pattern generation becomes more efficient in time, fault coverage, and the number of test patterns. Through some experiments with ISCAS '89 benchmark circuits, the efficiency of the proposed method is shown.

  • PDF

A Study on the Design of the Output ESD Protection Circuits and their Electrical Characteristics (출력단 ESD 보호회로의 설계 및 그 전기적 특성에 관한 연구)

  • 김흥식;송한정;김기홍;최민성;최승철
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.29A no.11
    • /
    • pp.97-106
    • /
    • 1992
  • In integrated circuits, protection circuits are required to protect the internal nodes from the harmful ESD(Electrostatic discharge). This paper discusses the characteristics of the circuit components in ESD protection circuitry in order to analyze the ESD phenomina, and the design methodalogy of ESD protection circuits, using test pattern with a variation of the number of diode and transistor. The test devices are fabricated using a 0.8$\mu$m CMOS process. SPICE simulation was also carried out to relate output node voltage and measured ESD voltage. With increasing number of diodes and transistors in protection circuit, the ESD voltage also increases. The ESD voltage of the bi-directional circuit for both input and output was 100-300[V], which in higher than that of only output(uni-directional) circuit. In addition, the ESD protection circuit with the diode under the pad region was useful for the reduction of chip size and parasitic resistance. In this case, ESD voltage was improved to a value about 400[V].

  • PDF

The Study on the Design of Static Flip-Flop Circuits for the Driving of Matrix Type Electrodes (매트릭스형 전극 구동용 스태틱 플립플롭 회로의 설계기법에관한 연구)

  • 최선정;정기현;김종득
    • Journal of the Korean Institute of Telematics and Electronics A
    • /
    • v.30A no.7
    • /
    • pp.75-81
    • /
    • 1993
  • In this paper, New type of Static Edge Triggered D Flip-Flop Circuits which are effective for the sequencial selecting and addressing of Matrix type Electrodes being applied to Flat Display Devices is proposed by the Design Technique using the Transmission Characteristics of Feedback Transistors and Charge Back Up Function. These Circuits composed of 2-4 less transistors in number than Conventional Static D Flip Flop's have some advantages that the Maximum Transition Time of Clock Signals allowed is increased by 100-450 times more than that of the Conventional circuit at 100KHz Clock Frequence and Circuit Safety is much increased by making the wider ranges, 1-4V, of Clock Levelas a Non-operating periods than 3-3.2V ranges in case of the Conventional Circuit at 10MHz clock frequence. By these advantages, These circuits can be very effectively used in case that clock signal has long transition time, especially on the low frequency operation.

  • PDF

A Study on composition of the negative resistance circuit (부저항특성회로의 구성에 관한 연구)

  • 박의열
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.10 no.6
    • /
    • pp.11-24
    • /
    • 1973
  • A new simple technique for 2-terminal negative resistance cireait analysis and synthesis is developed, by using the equivalent e.m.f. defined as a function of input lotage or current variation. The technique is applied to design 2-terminal junction transistor negative resistance circuits based on the parameter control method. Modeling circuits for SCR, GTO-SCR and SSS are also derived from the proposed transistor negative resistance circuits, and the merits of the modeling circuits are discussed.

  • PDF

CMOS on-chip voltage and current reference circuits for low-voltage applications (저전압용 CMOS 온-칩 기준 전압 및 전류 회로)

  • 김민정;이승훈
    • Journal of the Korean Institute of Telematics and Electronics C
    • /
    • v.34C no.4
    • /
    • pp.1-15
    • /
    • 1997
  • This paper proposes CMOS on-chip voltage and current reference circuits that operate at supply voltages between 2.5V and 5.5V without using a vonventional bandgap voltage structure. The proposed reference circuits based on enhancement-type MOS transistors show low cost, compatibility with other on-chip MOS circuits, low-power consumption, and small-chip size. The prototype was implemented in a 0.6 um n-well single-poly double-metal CMOS process and occupies an active die area of $710 um \times 190 um$. The proposed voltage reference realizes a mean value of 0.97 V with a standard deviation of $\pm0.39 mV$, and a temperature coefficient of $8.2 ppm/^{\circ}C$ over an extended temeprature range from TEX>$-25^{\circ}C$ to $75^{\circ}C$. A measured PSRR (power supply rejection ratio) is about -67 dB at 50kHz.

  • PDF

A Driving Scheme Using a Single Control Signal for a ZVT Voltage Driven Synchronous Buck Converter

  • Asghari, Amin;Farzanehfard, Hosein
    • Journal of Power Electronics
    • /
    • v.14 no.2
    • /
    • pp.217-225
    • /
    • 2014
  • This paper deals with the optimization of the driving techniques for the ZVT synchronous buck converter proposed in [1]. Two new gate drive circuits are proposed to allow this converter to operate by only one control signal as a 12V voltage regulator module (VRM). Voltage-driven method is applied for the synchronous rectifier. In addition, the control signal drives the main and auxiliary switches by one driving circuit. Both of the circuits are supplied by the input voltage. As a result, no supply voltage is required. This approach decreases both the complexity and cost in converter hardware implementation and is suitable for practical applications. In addition, the proposed SR driving scheme can also be used for many high frequency resonant converters and some high frequency discontinuous current mode PWM circuits. The ZVT synchronous buck converter with new gate drive circuits is analyzed and the presented experimental results confirm the theoretical analysis.

Organic Integrated Circuits based on Pentacene TFTs

  • Xu, Yong-Xian;Kong, Sang-Bok;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2007.08b
    • /
    • pp.1680-1682
    • /
    • 2007
  • The integrated circuits such as inverters, ring oscillators, NAND and NOR gates, and rectifiers were fabricated on PEN substrate by using pentacene TFTs. The OTFTs used bottom contact structure and produced the average mobility of $0.26\;cm^2/V.sec$ and on/off current ratio of $10^5$. All circuits worked successfully like the simulation results. Especially, the rectifier was able to operate up to 1 MHz input signals, and ring oscillator exhibited oscillation frequency of 1MHz at-40V.

  • PDF

Test Generation Algorithm for CMOS Circuits considering Time - skews (Time-stews를 고려한 CMOS회로의 테스트 생성 알고리즘)

  • Lee, C.W.;Han, S.B.;Kim, Y.H.;Jung, J.M.;Sun, S.K.;Lim, I.C.
    • Proceedings of the KIEE Conference
    • /
    • 1987.07b
    • /
    • pp.1551-1555
    • /
    • 1987
  • This paper proposes a new test generation algorithm to detect stuck-open faults regardless of tine-skews in CMOS circuits. For testing for stuck-open faults regardless of time-skews, in this method, Hamming distance between the initialization pattern and the test pattern is made 1 by considering the responses of the internal gates. Therefore, procedure of the algorithm is simpler than that of the conventional methods because the line justification is unnecessary. Also, this method needs no extra hardware for testability and can be applied to random CMOS circuits in addition to two-level NAND - NAND CMOS circuits.

  • PDF

Design of MYNAMIC CMOS ARRAY LOGIC (DYNAMIC CMOS ARRAY LOGIC의 설계)

  • 한석붕;임인칠
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.26 no.10
    • /
    • pp.1606-1616
    • /
    • 1989
  • In this paper, the design of DYNAMIC CMOS ARRAY LOGIC which has both advantages of dynamic CMOS and array logic circuits is proposed. The major components of DYNAMIC CMOS ARRAY LOGIC are two-stage dunamic CMOS circuits and an internal clock generator. The function block of dynamic CMOS circuits is realized as a parallel interconnection of NMOS transistors. Therefore the operating speed of DYNAMIC CMOS ARRAY LOGIC is much faster than the one of the conventional dynamic CMOS PLAs and static CMOS PLA. Also, the charge redistribution problem by internl delay is solved. The internal clock generator generates four internal clocks that drive all the dynamic CMOS circuits. During evaluation, two clocks of them are delayed as compared with others. Therefore the race problem is completoly eliminated. The internal clock generator also prevents the reduction of circuit output voltage and noise margin due to leakage current and charge coupling without any penalty in circuit operating speed or chip area utilization.

  • PDF

A 40-W Flyback Converter with Dual-Operation Modes for Improved Light Load Efficiency

  • Kang, Jin-Gyu;Park, Jeongpyo;Gong, Jung-Chul;Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.15 no.4
    • /
    • pp.493-500
    • /
    • 2015
  • A flyback converter operates with either pulse width modulation (PWM) or pulse frequency modulation (PFM) control scheme depending on the load current. At light load condition, PFM control is employed to reduce the switching frequency and thereby minimize the switching power loss. For heavier load, PWM control is used to regulate the output voltage of the flyback converter. The flyback controller has been implemented in a $0.35{\mu}m$ BCDMOS process and applied to a 40-W flyback converter. The light-load power efficiency of the flyback converter is improved up to 5.7-% comparing with the one operating with a fixed switching frequency.