• Journal of the Optical Society of Korea
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• v.7 no.1
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• pp.1-6
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• 2003

Integration and miniaturization at the systems level are key requirements for photonics applications. Here, we describe the concept of planar integration of free-space optical systems and its use as an optical interconnection technology. Two specific applications will be considered, a parallel chip-to-chip interconnect and an optical clock distribution network.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.23-34
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• 2013

Over the past several decades in the microelectronics industry, devices have gotten smaller, thinner, and lighter, without any accompanying degradation in quality, performance, and reliability. One permanent and deniable trend in packaging as well as wafer fabrication industry is system integration. The proliferating options for system integration, recently, are driving change across the overall semiconductor industry, requiring more investment in developing, ramping and supporting new die-, wafer- and board-level solution. The trend toward 3D system integration and miniaturization in a small form factor has accelerated even more with the introduction of smartphones and tablets. In this paper, the key issues and state of the art for system integration in the packaging process are introduced, especially, focusing on ease transition to next generation packaging technologies like through silicon via (TSV), 3D wafer-level fan-out (WLFO), and chip-on-chip interconnection. In addition, effective solutions like fine pitch copper pillar and MEMS packaing of both advanced and legacy products are described with several examples.

• Electronics and Telecommunications Trends
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• v.32 no.6
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• pp.8-16
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• 2017

In this paper, we review studies attempting to triumph over the limitation of Si-based semiconductor technologies through a heterogeneous integration of high mobility compound semiconductors on a Si substrate, and the co-integration of electronic and/or optical devices. Many studies have been conducted on the heterogeneous integration of various materials to overcome the Si semiconductor performance and obtain multi-purpose functional devices. On the other hand, many research groups have invented device fusion technologies of electrical and optical devices on a Si substrate. They have co-integrated Si-based CMOS and InGaAs-based optical devices, and Ge-based electrical and optical devices. In addition, chip and wafer bonding techniques through TSV and TOV have been introduced for the co-integration of electrical and optical devices. Such intensive studies will continue to overcome the device-scaling limitation and short-channel effects of a MOS transistor that Si devices have faced using a heterogeneous integration of Si and a high mobility compound semiconductor on the same chip and/or wafer.

• Journal of IKEEE
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• v.18 no.3
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• pp.349-355
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• 2014

In semiconductor IP reuse, precise understanding of semiconductor IP interfaces is essential for integrated chip design. However, in general, these interfaces are described in the original designer's description style. Furthermore, their description method are not unified, so it is very difficult for the chip integration designer to understand them. This paper proposes a standardized description method of semiconductor IP interfaces. It consists of 9 items such as IP information, description level, model provision, data type, interface information, port information, signal information, protocol information, and source file. The proposed method helps the chip integration designer to understand semiconductor IP interfaces and to integrate them into a single chip.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.1-10
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• 2009

As a demand for the portable device requiring smaller size and better performance is in hike, reducing the size of conventionally used planar 2 dimensional chip cannot be a solution for the enhancement of the semiconductor chip technology due to an increase in RC delay among interconnects. To address this problem, a new technology - "3 dimensional (3D) IC chip stack" - has been emerging. For the integration of the technology, several new key unit processes (e.g., silicon through via, wafer thinning and wafer alignment and bonding) should be developed and much effort is being made to achieve the goal. As a result of such efforts, 4 and 8 chip-stacked DRAM and NAND structures and a system stacking CPU and memory chips vertically were successfully developed. In this article, basic theory, configurations and key unit processes for the 3D IC chip integration, and a current tendency of the technology are explained. Future opportunities and directions are also discussed.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.4
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• pp.155-165
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• 1994

An analog neural network circuit of rhigh density integration is introduced. It's prototype chip is designed in 3 by 3 mm2 die. It uses only one MOSFET to implement a synapse. The number of synapses per neuron can be expanded by cascading several chips. The influence of nonlinearity in synapses is analyzed. A formalization of the back propagation which can be applied to this circuit is shown. Some simulation results are shown and disscussed.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1322-1323
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• 2006

This research aims to develop the multiple channel electrochemical DNA chip that has the above characteristic and be able to solve the problems. At first, we fabricated a high integration type DNA chip array by lithography technology. It is able to detect a plural genes electrochemically after immobilization of a plural probe DNA and hybridization of non-labeling target DNA on the electrodes simultaneously.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.757-760
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• 2001

We have used the random fluidic self-assembly (RFSA) technique based on the chip pattern of hydrophobic self-assembly layers to assemble microfabricated particles onto the chip pattern. Immobilization of DNA, fabrication of the particles and the chip pattern, arrangement of the particles on the chip pattern, and recognition of each using DNA fluorescence measurement were carried out. Establishing the walls, the arrangement stability of the particles was improved. Each DNA is able to distinguish by using the lithography process on the particles. Advantages of this method are process simplicity, wide applicability and stability. It is thought that this method can be applicable as a new fabrication technology to develop a minute integration type biosensor microarray.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.131-137
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• 2016

In this paper, we analyze the impedance analysis of vertical interconnection through-silicon vias (TSV) that is being studied for the purpose of improving the degree of integration and an electric feature in 3D IC. Also, it is to improve the performance and the degree of integration of the three-dimensional integrated circuit system which can exceed the limits of conventional two-dimensional a IC. In the future, TSV technology in full-chip 3-dimensional integrated circuit system design is very important, and a study on the electrical characteristics of the TSV for high-density and high-bandwidth system design is very important. Therefore, we study analyze the impedance influence of the TSV in accordance with the distance and frequency in a multiple TSV-to-TSV for the purpose of designing a full-chip three-dimensional IC. The results of this study also are applicable to semiconductor process tools and designed for the manufacture of a full-chip 3D IC.

• Nuclear Engineering and Technology
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• v.53 no.10
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• pp.3327-3334
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• 2021

Present electric grids are advanced to integrate smart grids, distributed resources, high-speed sensing and control, and other advanced metering technologies. Cybersecurity is one of the challenges of the smart grid and nuclear plant digital system. It affects the advanced metering infrastructure (AMI), for grid data communication and controls the information in real-time. The research article is emphasized solving the nuclear and smart grid hardware security issues with the integration of field programmable gate array (FPGA), and implementing the latest Time Authenticated Cryptographic Identity Transmission (TACIT) cryptographic algorithm in the chip. The cryptographic-based encryption and decryption approach can be used for a smart grid distribution system embedding with FPGA hardware. The chip design is carried in Xilinx ISE 14.7 and synthesized on Virtex-5 FPGA hardware. The state of the art of work is that the algorithm is implemented on FPGA hardware that provides the scalable design with different key sizes, and its integration enhances the grid hardware security and switching. It has been reported by similar state-of-the-art approaches, that the algorithm was limited in software, not implemented in a hardware chip. The main finding of the research work is that the design predicts the utilization of hardware parameters such as slices, LUTs, flip-flops, memory, input/output blocks, and timing information for Virtex-5 FPGA synthesis before the chip fabrication. The information is extracted for 8-bit to 128-bit key and grid data with initial parameters. TACIT security chip supports 400 MHz frequency for 128-bit key. The research work is an effort to provide the solution for the industries working towards embedded hardware security for the smart grid, power plants, and nuclear applications.