• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.98-103
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• 2019

Optical filters to control light wavelength of displays or cameras are fabricated by multi-layer stacking process of low and high index thin films. The process of multi-layer stacking of thin films has received much attention as an optimal process for effective manufacturing in the optical filter industry. However, multi-layer processing has disadvantages of complicated thin film process, and difficulty of precise control of film morphology and material selection, all of which are critical for transmittance and coloring effect on filters. In this study, the composite $TiO_2$, which can be used to control of UV absorption, coated on nano hollow silica sol, was synthesized as a coating material for optical filters. Furthermore, systematic analysis of the process parameters during the chemical reaction, and of the structural properties of the coating solutions was performed using SEM, TEM, XRD and photo spectrometry. From the structural analysis, we found that the 85 nm nano hollow silica with 2.5 nm $TiO_2$ shell formation was successfully synthesized at proper pH control and titanium butoxide content. Photo luminescence characteristics, excited by UV irradiation, show that stable absorption of 350 nm-light, correlated with a 3.54 eV band gap, existed for the $TiO_2$ shell-nano hollow silica reacted with 8.8 mole titanium butoxide solution. Transmittance observed on substrate of the $TiO_2$ shell-nano hollow silica showed effective absorption of 200-300 nm UV light without deterioration of visible light transparency.

• Journal of the Korean Magnetics Society
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• v.5 no.2
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• pp.123-127
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• 1995

$CuFe_{2}O_{4}$ was accomplished by chemical rrethod and the crystallographic and magnetic properties have been studied by $M\"{o}ssbauer$ spectroscopy and X-ray diffraction. The slowly cooled sample is found to have a tetragonal spinel structure with the lattice constant $a=8.26{\pm}0.05{\AA},\;c=8.75{{\pm}}0.05{\AA}$. The $M\"{o}ssbauer$ spectra between the room temperature to the Curie temperature show that the $Cu_{2+}$ ions at octahedral site have the Jahn-Teller effect and the sample exhibits a structural phase transition near 630K due to the Jahn-Teller effect. The Curie temperature is found to be 690K and it is lower than that of ceramic method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.50.2-50.2
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• 2009

ZnO 는 상온에서 3.37eV의 넓은 밴드갭과 60 meV의 엑시톤 결합에너지를 가지는 직접형 반도체로서 높은 투과성, 저가의 재료비, 비독성, 친환경적인 재료로서 발광다이오드, 디스플레이 응용분야 등 많은 부분에서 관심을 받고 있다. 유리 기판은무겁고 쉽게 깨지는 특성에도 불구하고 디스플레이 응용분야에서 폭넓게 사용되고 있으나 많은 연구자들은 이러한 문제점들을 해결하기 위해 플렉서블 기판위에서의 ZnO 성장 연구를 진행하고 있다 ZnO를 성장시키는 방법에는 molecular beam epitaxy (MEB), chemical vapordeposition (CVD), 그리고 atomic layer deposition (ALD)등많은 방법들이 있다. 이 연구에서 우리는 플렉서블기판의 플라즈마 전처리에 따른 ZnO의 구조적 그리고 광학적 특성에 대해 연구하였다. ZnO는 ALD 방법에 의해 성장되었고 반응물로는 temperature controlled bath 속에서 $10^{\circ}C$와 $30^{\circ}C$로 각각 온도를 유지시킨 diethylzinc (DEZn)과 distilled water ($H_2O$)를 사용하였다. 성장된 ZnO의 표면 morphology는atomic force microscope (AFM) 과 scanning electron microscope (SEM)으로 측정하였고, 광학적, 구조적특성은 Photoluminescence (PL)와 X-ray diffraction (XRD) 방법으로 각각으로 측정 되었다.

• International Journal of Concrete Structures and Materials
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• v.10 no.4
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• pp.539-553
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• 2016

Polymer concrete (PC) has been favoured over Portland cement concrete when low permeability, high adhesion, and/or high durability against aggressive environments are required. In this research, a new class of PC incorporating Multi-Walled Carbon Nanotubes (MWCNTs) is introduced. Four PC mixes with different MWCNTs contents were examined. MWCNTs were carefully dispersed in epoxy resin and then mixed with the hardener and aggregate to produce PC. The impact strength of the new PC was investigated by performing low-velocity impact tests. Other mechanical properties of the new PC including compressive, flexural, and shear strengths were also characterized. Moreover, microstructural characterization using scanning electron microscope and Fourier transform infrared spectroscopy of PC incorporating MWCNTs was performed. Impact test results showed that energy absorption of PC with 1.0 wt% MWCNTs by weight of epoxy resin was significantly improved by 36 % compared with conventional PC. Microstructural analysis demonstrated evidence that MWCNTs significantly altered the chemical structure of epoxy matrix. The changes in the microstructure lead to improvements in the impact resistance of PC, which would benefit the design of various PC structural elements.

• Korean Journal of Environmental Agriculture
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• v.15 no.2
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• pp.246-261
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• 1996

Organophosphorus pesticides, which are an important part of synthetic pesticides in current use contain sulfur atom in their molecules and can be activated or detoxified by environmental and/or biological metabolism. Among the related metabolic reactions, oxidative processes are particularly important with their final products and the study on the reactive intermediates formed in those reactions is essential to elucidate the metabolic pathways and mechanisms and to understand the toxicological properties. This review dealt with the reactive intermediates formed in various reactions from the structural and mechanistic point of view for organophosphorus pesticides and related compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.252-252
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• 2009

In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.

• Transactions on Electrical and Electronic Materials
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• v.8 no.2
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• pp.89-92
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• 2007

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200\;^{\circ}C$ to $350\;^{\circ}C$ at intervals of $50\;^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.50-53
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• 2008

In this work, the $TiO_2$ pigment influence in HDPE dielectric strength was analyzed. Chemical and structural characterizations were made to identify changes during the processing and your influence in the electrical properties. Formulations containing 0, 0.5, 1, 2.5, 4 and 6 of titanium dioxide were processed by extrusion and injection molding with stabilization-antioxidants, ultraviolet stabilizers and plasticizers. The electrical strength tests were analyzed by the statistical distribution of Weibull, and the maximum likelihood method. The high concentrations present lower values to electrical strength. The $\beta$ parameter could be using to insulator particles dispersion. The $TiO_2$ concentration variation shows that these incorporations implicate strength values increase has a maximum (5,35MV/cm). High pigment concentration induces a little falls in property values. Observing the $\beta$ parameter, minimum experiment electric field (Ebmin) and electric strength value, found that the best electric perform formulation was the formulation with 2.5% $TiO_2$ weight.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.86-90
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• 2008

$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$.