• 한국전기전자재료학회논문지
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• 제14권3호
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• pp.175-184
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• 2001

In this study, the improved throughput and stability in device fabrication could be obtained by applying CMP process to STi structue in 0.18 um semiconductor device. To employ the CMP process in STI structure, the Reverse Moat Process used to be added after STI Fill, as a result, the process became more complex and the defect were seriously increased than they had been,. Removal rate of each thin film in STI CMP was not uniform, so, the device must have been affected. That is, in case of excessive CMP, the damage on the active area was occurred, and in the case of insufficient CMP nitride remaining was happened on that area. Both of them deteriorated device characteristics. As a solution to these problems, the development of slurry having high removal rate and high oxide to nitride selectivity has been studied. The process using this slurry afford low defect levels, improved yield, and a simplified process flow. In this study, we evaluated the 'High Selectivity Slurry' to do a global planarization without reverse moat step, and also we evaluated EPD(Eend Point Detection) system with which 'in-situ end point detection' is possible.

• Tribology and Lubricants
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• 제27권1호
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• pp.7-12
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• 2011

Interest in advanced machining process such as AJM(abrasive jet machining) and CMP(chemical-mechanical polishing) using micro/nano-sized abrasives has been on the increasing demand due to wide use of super alloys, composites, semiconductor and ceramics, which are difficult to or cannot be processed by traditional machining methods. In this paper, the effects of pressure, wafer moving velocity and fluid viscosity were investigated by 2-dimensional finite element analysis method considering slurry fluid flow. From the investigation, it could be found that the simulation results quite corresponded well to the Preston's equation that describes pressure/velocity dependency on material removal. The result also revealed that the stress and corresponding material removal induced by the collision of particle may decrease under relatively high wafer moving speed due to the slurry flow resistance. In addition, the increase in slurry fluid viscosity causes the reduction of material removal rate. It should be noted that the viscosity effect can vary with the shape of abrasive particle.

• Journal of Welding and Joining
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• 제35권3호
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• pp.28-34
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• 2017

The authors derived the criteria on the process parameters of laser depositions with metal powers(SUS316L & IN718) by evaluating the surface and cross-section properties of the deposition layers. The surface characteristics of the deposition layer are investigated through optical microscopy by controlling the process parameters of laser output, powder feeding rate and gas feeding rate. The cross-section characteristics were also analyzed after polishing and chemical etching process. As the gas feeding rate increased, the amount of powder loss increased and the difference in the dilution ratio and heat affected zone depending on laser outputs was observed. In addition, the powder feeding rate used in the experiment did not interfere with the energy absorption of the base material.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.105-106
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• 2006

The ferroelectric materials of the PZT, SBT attracted much attention for application to ferroelectric random access memory (FRAM) devices. Through the last decade, the lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for the ferroelectric products due to its higher remanant polarization and the ability to withstand higher coercive fields. FRAM has been currently receiving increasing attention for one of future memory devices due to its ideal memory properties such as non-volatility, high charge storage, and faster switching operations. In this study, we first applied the damascene process using chemical mechanical polishing (CMP) to the fabricate the $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitor in order to solve the problems of plasma etching such as low etching profile and ion charging. The structural characteristics were compared with specimens before and after CMP process of PZT films. The scanning electron microscopy (SEM) analysis was performed to compare the morphology surface characteristics of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ capacitors. The densification by the vertical sidewall patterning and charging-free ferroelectric capacitor could be obtained by the damascene process without remarkable difference of the characteristics.

• 한국초전도ㆍ저온공학회논문지
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• 제13권4호
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• pp.18-21
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• 2011

In this work, the yttrium oxide($Y_2O_3$) thin films as the buffer layer were prepared by the simple solution coating and reel-to-reel process on an unpolished metal tape substrate. The $Y_2O_3$ thin films were successfully synthesized by the hydrolysis of yttrium acetate. We have studied the improvement of surface roughness with the concentration of solution(0.1 M, 0.4 M, M) and the number of coatings. The planarization by solution coating process is simple in comparison with the existing polishing process, and it is eco-friendly, and has the benefits of low cost process. The thickness of $Y_2O_3$ films was increased with the $Y_2O_3$ concentration in the solution, and the surface became smoother with the number of coating cycles. Using this process, we have achieved 1.2 nm RMS roughness from a starting roughness of over 31 nm on 25 ${\mu}m^2$ area.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.131-134
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• 2011

Back-end-of-line using ultra low-k (ULK; k < 2.5) has been required to reduce resistive capacitance beyond 45 nmtechnologies, because micro-processing units need higher speed and density. There are two strategies to manufacture ULK inter-layer dielectric (ILD) materials using an air-gap (k = 1). The former ULK and calcinations of ILD degrade the mechanical strength and induce a high cost due to the complication of following process, such as chemical mechanical polishing and deposition of the barrier metal. In contrast, the air-gap based low-k ILD with a relatively higher density has been researched on the trench-type with activity, but it has limited application to high density devices due to its high air-gap into the next metal layer. The height of air-gap into the next metal layer was reduced by changing to the via-typed air-gap, up to about 50% compared to that of the trench-typed air-gap. The controllable ULK was easily fabricated using the via-typed air-gap. It is thought that the via-type air-gap made the better design margin like via-patterning in the area with the dense and narrow lines.

• Transactions on Electrical and Electronic Materials
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• 제7권4호
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• pp.157-162
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• 2006

Chemical-mechanical polishing (CMP), one of the dominant technology for ULSI planarization, is used to flatten the micro electro-mechanical systems (MEMS) structures. The objective of this paper is to achieve good planarization of the deposited film and to improve deposition efficiency of subsequent layer structures by using surface-micromachining process in MEMS technology. Planarization characteristic of poly-Si film deposited on thin oxide layer with MEMS structures is evaluated with different slurries. Patterns used for this research have shapes of square, density, line, hole, pillar, and micro engine part. Advantages of CMP process for MEMS structures are observed respectively by using the test patterns with structures larger than 1 urn line width. Preliminary tests for material selectivity of poly-Si and oxide are conducted with two types of silica slurries: $ILD1300^{TM}\;and\;Nalco2371^{TM}$. And then, the experiments were conducted based on the pretest. A selectivity and pH adjustment of slurry affected largely step heights of MEMS structures. These results would be anticipated as an important bridge stone to manufacture MEMS CMP slurry.

• KEPCO Journal on Electric Power and Energy
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• 제1권1호
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• pp.151-156
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• 2015

In order to improve the properties of high-temperature superconducting wire for superconducting cable system, we optimized the electro-polishing (EP), ion-beam assisted deposition (IBAD), superconducting (SC) layer, and baking (heat) treatment. The buffer layer was deposited on electro-polished substrate with RMS roughness ($R_{RMS}$) less than 5 nm. The IBAD process was carried out at $V_{beam}$: 1100 V and $V_{accel}$: 850 V that resulted in highly crystalline film of $LaMnO_3$. Chemical composition of SC layer is key to higher critical current, and we found that composition can be determined by surface color of SC layer. We adopt a proprietary contorl system based on RGB analysis of the surface and achieved critical current of 150 A/4 mm-width. The proposed baking treatment resulted in decreasing of about 10% of fraction defects.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.149-153
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• 2003

Chemical mechanical polishing (CMP) technology for global planarization of multi-level inter-connection structure has been widely studied for the next generation devices. CMP process has been paid attention to planarized pre-metal dielectric (PMD), inter-layer dielectric (ILD) interconnections. Expecially, shallow trench isolation (STI) used to CMP process on essential. Recently, the direct STI-CMP process without the conventional complex reverse moat etch process has established by using slurry additive with the high selectivity between $SiO_2$ and $Si_3N_4$ films for the purpose of process simplification and n-situ end point detection(EPD). However, STI-CMP process has various defects such as nitride residue, tom oxide and damage of silicon active region. To solve these problems, in this paper, we studied the planarization characteristics using a high selectivity slurry(HSS). As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of HSS STI-CMP process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.162-165
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• 2003

The corrosion characteristics of diffusion barrier in Copper CMP has been investigated. Key experimental variables that has been investigated are the corrosion rate by different agents containing slurry of Cu CMP. Whenever Cu and Ta films were corroded adding each oxidizer, the corrosion rate of Ta was much lower than that of Cu. That is, the difference in the corrosion rates of Ta by oxidizer was not larger as compared with Cu. As corroded by complexing agents, the corrosion rate of Ta was close to O. The corrosion rate of Ta increased as added $HNO_3$ and $CH_3COOH$ compared with the reference slurry; on the other hand, it decreased with addition of HF. In addition, resulting corrosion rate went up with lower pH of agent. The corrosion rates by agents were however significant small; hence, it doesn't affect on the removal rate of Cu CMP practically. Consequently, this can be explained by assuming that the mechanical effect dominates than the chemical effect on the polishing rate of Ta(TaN).