Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.05c
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- Pages.162-165
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- 2003
Corrosion Characteristics of Diffusion Barrier in Copper CMP
구리 CMP시 확산방지막의 부식특성
- Lee, Do-Won (Chung-Ang University) ;
- Kim, Nam-Hoon (Chung-Ang University) ;
- Lim, Jong-Heun (Dong-Jun Semichem) ;
- Kim, Sang-Yong (Dongbu-Anam Semiconductor) ;
- Lee, Chul-In (Ansan College of Technology) ;
- Chang, Eui-Gu (Chung-Ang University)
- Published : 2003.05.16
Abstract
The corrosion characteristics of diffusion barrier in Copper CMP has been investigated. Key experimental variables that has been investigated are the corrosion rate by different agents containing slurry of Cu CMP. Whenever Cu and Ta films were corroded adding each oxidizer, the corrosion rate of Ta was much lower than that of Cu. That is, the difference in the corrosion rates of Ta by oxidizer was not larger as compared with Cu. As corroded by complexing agents, the corrosion rate of Ta was close to O. The corrosion rate of Ta increased as added