• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.647-648
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• 2005

The development of CMP slurry chemistry for Ni that provides good CMP performance is the key for nickel based MEMS device fabrication. In this study, CMP of nickel was performed using different slurry versus oxidizer ratios arid different oxidizers also alumina particles as an abrasive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.57-58
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• 2006

Chemical-mechanical planarization (CMP) of Cu has used currently in semiconductor process for multilevel metallization system. This process requires the application of a considerable down-pressure to the sample in the polishing, because porous low-k films used in the Cu-multilevel interconnects of 65nm technology node are often damaged by mechanical process. Also, it make possible to reduce scratches and contaminations of wafer. Electrochemical mechanical planarization (ECMP) is an emerging extension of CMP. In this study, the electrochemical mechanical polisher was manufactured. And the static and dynamic potentiodynamic curve of Cu were measured in KOH based electrolyte and then the suitable potential was found.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.114-118
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• 2009

PVA (polyvinyl alcohol) brush cleaning method is a typical cleaning method for semiconductor cleaning process especially post-CMP cleaning. PVA brush contacts with the wafer surface and abrasive particle, generating the contact rotational torque of the brush, which is the removal mechanism. The brush rotational torque can overcome theoretically the adhesion force generated between the abrasive particle and wafer by zeta potential. However, after CMP (chemical mechanical polishing) process, many particles remained on the wafer because the brush was contaminated in previous post-CMP cleaning step. The abrasive particle on the brush redeposits to the wafer. The level of the brush contamination increased according to the cleaning run time. After cleaning the brush, the level of wafer contamination dramatically decreased. Therefore, the brush cleanliness effect on the cleaning performance and it is important for the brush to be maintained clearly.

• Journal of the Korea Society for Simulation
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• v.11 no.1
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• pp.23-30
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• 2002

An STI(Shallow Trench Isolation) by using a CMP(Chemical Mechanical Polishing) process has been one of the key issues in the device isolation[1] In this paper we fabricated N, P-MOSFEET tall analyse hump characteristics in various rounding oxdation thickness(ex : Skip, 500, 800, 1000$\AA$). As a result we found that hump occurred at STI channel edge region by field oxide recess. and boron segregation(early turn on due to boron segregatiorn at channel edge). Therefore we improved that hump occurrence by increased oxidation thickness, and control field oxide recess( 20nm), wet oxidation etch time(19HF,30sec), STI nitride wet cleaning time(99HF, 60sec+P 90min) and fate pre-oxidation cleaning time (U10min+19HF, 60sec) to prevent hump occurring at STI channel edge.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4620-4624
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• 2022

Several cadmium zinc telluride (CZT) crystals were fabricated into radiation detectors using methods that included slicing, dicing, lapping, polishing, and chemical etching. A wet passivation with sodium hypochlorite (NaOCl) was then carried out on the Br-etched detectors. The Te-rich layer on the CZT surface was successfully compensated to the Te oxide layer, which was analyzed with X-ray photoelectron spectroscopy data of both a Br-etched crystal and a passivated CZT crystals. We confirmed that passivation with NaOCl improved the transport property by analyzing the mobility-lifetime product and surface recombination velocity. The electrical and spectroscopic properties of large volume detectors were compared before and after passivation, and then the detectors were observed for a month. Both bar and quasi-hemispherical detectors show an enhancement in performance after passivation. Thus, we could identify the effect of NaOCl passivation on large volume CZT detectors.

• Particle and aerosol research
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• v.12 no.4
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• pp.145-150
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• 2016

During the chemical mechanical planarization (CMP) process, slurry that comprises abrasive particles can directly affect the CMP performance and quality. Mainly, the large particles in the slurry can generate the defects on the wafer. Thus, many kinds of filters have been used in the CMP process to remove unwanted over-sized particles. Among these filters, the point-of-use (POU) filter is used just before the slurry is supplied onto the CMP pad. In the CMP research field, analysis of the POU filter has been relatively exceptional, and previous studies have not focused on the standardized filtration efficiency (FE) or filter performance. Furthermore, conventional evaluation methods of filter performance are not appropriate for POU filters, as the POU filter is not a membrane type, but is instead a depth type roll filter. In order to accurately evaluate the POU filter, slurry FE according to particle size was measured in this study. Additionally, a CMP experiment was conducted with filtered slurry to demonstrate the effects of filtered slurry on CMP performance. Depending on the flow rate and the filter retention size, the FE according to particle size was different. When the small and large particles have different FEs, the total filtration efficiency (TFE) can still have a similar value. For this reason, there is a need to measure the FE with respect to the particle size to verify the effects of the POU filter on the CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.49-49
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• 2009

최근 범세계적인 그린에너지 정책에 관련해 화석연료를 대체할 수 있는 수소, 풍력, 태양광 등의 대체 에너지에 대한 관심이 고조되고 있다. 이러한 여러 대체에너지 중에서도 태양광을 전기에너지로 변환하는 태양전지에 관한 연구가 집중되고 있다. 태양전지는 구조적으로 단순하고 제조 공정도 비교적 간단하지만, 보다 널리 보급되기 위해서는 경제성 향상이라는 문제점을 해결해야 한다. 이를 위해서는 기존의 실리콘 태양전지를 대체할 수 있는 신물질에 대한 연구가 필요하며, 그 중에서도 반도체 기술을 이용한 박막형 태양전지는 기존의 실리콘 태양 전지가 가지고 있는 고비용이라는 문제점을 극복할 수 있을 것으로 기대를 모으고 있다. 박막형 태양전지의 박막 재료로는 CIGS, CdTe 등이 연구되어지고 있지만, 아직까지는 기존의 실리콘 태양전지에 비해 에너지변환효율이 낮은 이유로 인해 실용화가 많이 이루어지지 못하고 있는 것이 사실이다. 이러한 박막형 태양전지의 재료들 중에서도 CdTe는 이종접합 박막형 태양전지에 흡광층으로 사용되는 것으로 상온에서 1.45eV 정도의 밴드갭(band gap) 에너지를 갖는 II-VI족 화합물반도체로써 태양광 스펙트럼과 잘 맞는 이상적인 밴드랩 에너지와 높은 광흡수도 때문에 박막형 태양전지로 가장 주목을 받고 있다. CdTe 박막의 제조 방법으로는 진공증착법(vacuum evaporation), 전착법(electrodeposition), 스퍼터링법(sputtering) 등이 있지만 본 연구에서는 스퍼터링법을 이용하여 박막을 증착하였다. 이상과 같이 증착된 CdTe 박막을 화학적기계적연마(CMP, chemical mechanical polishing) 공정을 적용시킴으로써, 태양전지의 에너지변환효율에 직접적인 영향을 끼칠 수 있는 CdTe 박막의 물리적, 전기적 특성들의 변화를 연구하기 위한 선행 연구를 진행하였다. 특히 본 연구에서는 CdTe 박막의 화학적 기계적 연마 특성을 분석하여 정규화를 통한 모델링을 수행하였다. 또한 화학적기계적연마 공정 전과 후의 표면 특성을 관찰하기 위해 SEM(scanning electron microscopy)과 AFM(atomic forced microscope)를 이용하였으며, 구조적 특성 관찰을 XRD(X-ray diffraction)를 사용하여 실험을 수행하였다.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.25 no.1
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• pp.36-44
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• 2015

Objectives: This study aimed to elucidate the physicochemical properties of silica powder and airborne particles as by-products generated from fabrication processes to reduce unknown risk factors in the semiconductor manufacturing work environment. Materials and Methods: Sampling was conducted at 200 mm and 300 mm semiconductor wafer fabrication facilities. Thirty-two powder and airborne by-product samples, diffusion(10), chemical vapor deposition(10), chemical mechanical polishing(5), clean(5), etch process(2), were collected from inner chamber parts from process and 1st scrubber equipment during maintenance and process operation. The chemical composition, size, shape, and crystal structure of silica by-product particles were determined by using scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy, and x-ray diffractometry. Results: All powder and airborne particle samples were composed of oxygen(O) and silicon(Si), which means silica particle. The by-product particles were nearly spherical $SiO_2$ and the particle size ranged 25 nm to $50{\mu}m$, and most of the particles were usually agglomerated within a particle size range from approximately 25 nm to 500 nm. In addition, the crystal structure of the silica powder particles was found to be an amorphous silica. Conclusions: The silica by-product particles generated from the semiconductor manufacturing processes are amorphous $SiO_2$, which is considered a less toxic form. These results should provide useful information for alternative strategies to improve the work environment and workers' health.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.5-10
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• 2007

Using a reference slurry, ammonium dodecyl sulfate (ADS), an anionic and environmentally friendly surfactant, was investigated as an alternative to BTA for its inhibition and lubrication characteristics. Results demonstrated that the inhibition efficiency of ADS was superior to that of BTA. Coefficient of friction (COF) was the lowest when the slurry contained ADS. This suggested that adsorbed ADS on the surface provided lubricating action thereby reducing the wear between the contacting surfaces. Temperature results were consistent with the COF and removal rate data. ADS showed the lowest temperature rise again confirming the softening effect of the adsorbed surfactant layer and less energy dissipation due to friction. Spectral analysis of shear force showed that increasing the pad-wafer sliding velocity at constant wafer pressure shifted the high frequency spectral peaks to lower frequencies while increasing the variance of the frictional force. Addition of ADS reduced the fluctuating component of the shear force and the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. By contrast, in the case of BTA, there were no such observed benefits but instead undesirable effects were seen at some polishing conditions. This work underscored the importance of real-time force spectroscopy in elucidating the adsorption, lubrication and inhibition of additives in slurries in CMP.

• Membrane and Water Treatment
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• v.11 no.4
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• pp.303-312
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• 2020

This study aims to investigate at a laboratory scale fluorides removal from an industrial wastewater having excessive F^- concentration through a hybrid process combining neutralization and membrane separation. For the membrane separation operation, both Reverse Osmosis (RO) and Nanofiltration (NF) were investigated and confronted. The optimized neutralization step with hydrated lime allowed reaching fluoride removal rates of 99.1± 0.4 %. To simulate continuous process, consecutive batch treatments with full recirculation of membrane process brines were conducted. Despite the relatively high super saturations with respect to CaF₂, no membrane cloaking was observed. The RO polishing treatment allowed decreasing the permeate fluoride concentration to 0.9± 0.3 mg/L with a fluoride rejection rate of 93± 2% at the optimal transmembrane pressure of around 100 psi. When NF membrane was used to treat neutralization filtrate, the permeate fluoride concentration dropped to 1.1± 0.4 mg/L with a fluoride rejection rate of 88± 5% at the optimal pressure of around 80 psi. Thus, with respect to RO, NF allowed roughly 20% decrease of the driving pressure at the expense of only 5% drop of rejection rate. Both NF and RO permeates at optimal operating transmembrane pressures respect environmental regulations for reject streams discharge into the environment.