• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.20 no.1
• /
• pp.86-95
• /
• 2011

Ultra-precision machining technology is the essential core technology in today's micro-electronics and electro-optical industries. The needs for processing systems to manufacture products to nanometer(nm) accuracy and sub-nanometer resolutions are increased recently. By using ion beam, it is possible to fabricate ultra-precision and ultra-fine products with nm accuracy and sub-nm resolution. In this paper, the basic research trends of ultra precision machining technology in domestic are surveyed, and the ways to reach to the world-leading level of basic research capabilities in the field of ultra-precision machining technology in domestic is suggested.

• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.27 no.12
• /
• pp.2110-2117
• /
• 2003

A physics-based material removal model in various scales is described and a feature scale simulation for a chemical mechanical polishing (CMP) process is performed in this work. Three different scales are considered in this model, i.e., abrasive particle scale, asperity scale and wafer scale. The abrasive particle and the asperity scales are combined together and then homogenized to result in force balance conditions to be satisfied in the wafer scale using an extended Greenwood-Williamson and Whitehouse-Archard statistical model that takes into consideration the joint distribution of asperity heights and asperity tip radii. The final computation is made to evaluate the material removal rate in wafer scale and a computer simulation is performed for detailed surface profile variations on a representative feature. The results show the dependence of the material removal rate on the joint distribution, applied external pressure, relative velocity, and other operating conditions and design parameters.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.5 no.4
• /
• pp.338-346
• /
• 1981

Honing, lapping, polishing and superfinishing are applied for a precision machining to finish the metal surface, but these precision machining are micro-cutting by hard and micro-abrasive grains. Frictional machining is the new method to finish mirrorlike surface without using those abrasive grains. The frictional machining produces high pressure and high temperature instantly by compressing a tool material against the metal surface in sliding motion. The metal surface is given plastic deformation and plastic flow by the above mentioned frictional motion, but the surface roughness of the metal surface is influenced by physical and chemical reaction in surrounding atmosphere. Therefore, the atmosphere around the metal optimum atmosphere in the frictional machining. The part 1 of the study was performed in liquid atmospheres. Diesel oil, lubricant, grease, lard oil, bean oil and cutting fluid were used as such atmospheres. Medium carbon steel SM 50 C was used as a workpiece and ceramic tip was applied as a frictional tool. The result of the experiment showed characteristic machining conditions to generate the best surface roughness in each atmospheres.

• Journal of the Korean Society for Precision Engineering
• /
• v.30 no.12
• /
• pp.1227-1235
• /
• 2013

Ceramic materials are classified by oxide, nitride and carbide material and have high brittleness, strength and hardness. Ceramic materials are strong in compression but weak in shearing and tension. This review paper has focused on technology trends and mechanism analysis of ceramics removal machining. The ceramic materials have superior mechanical, physical and chemical properties, but it is very hard to machining and the use of ceramics has been limited because of high strength and brittleness. In this paper, technology trends of ceramic removal-machining was introduced for types of machining technology, abrasive machining, cutting process, laser machining and so on.

• Proceedings of the Korean Information Science Society Conference
• /
• 1998.10c
• /
• pp.674-676
• /
• 1998

소자가 sub-quarter um급으로 축소됨에 따라 STI(Shallow Trench Isolation) 기술은 고 집적도의 ULSI 구현에 있어서 중요한 격리 방법으로 많이 사용되고 있다. 현재의 STI 기술은 주로 실리콘 기판을 식각 후 절연물질로 빈 공백이 없이 채우는 (void-free gap filling) 방법 [1,2]과 절연물질을 다시 표면 근처까지 CMP(Chemical Mechnical Polishing)로 etchback하여 평탄화를 하는 방법이 주요한 기술이 되고 있다. 또한 STI 구조로된 격리구조에서 만들어진 MOSFET의 전기적인 특성은 트랜치 격리의 상부 부분의 형태와 gap-filling 물질에 따라 큰 영향을 받게된다. 따라서 본 논문에서는 STI 구조로 만들어진 격리 구조에서 MOSFET의 hump 특성에 관해 연구하였다. 그 결과 hump는 STI 모서리에서 필드 옥사이드의 recess에 의한 모서리 부분에서의 전계 집중과 boron의 segration에 기인한 농도 감소로 인해 hump가 발생하는 것으로 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.105-106
• /
• 2005

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process has been widely used in microelectronics and semiconductor processes. Indium tin oxide (ITO) thin film was polished by CMP by the change of process parameters for the improvement of CMP performance. Removal rate and planarity were improved after CMP process at the optimized process parameters compared to that before CMP process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.107-108
• /
• 2005

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.

• International Journal of Precision Engineering and Manufacturing
• /
• v.9 no.2
• /
• pp.8-10
• /
• 2008

Chemical mechanical polishing (CMP) is a very precise planarization technique where a wafer is polished by a slurry-coated pad. A slurry is dropped on the rotating pad surface and is supplied between the wafer and the pad. This research aims at reducing the slurry consumption and removing waste particles quickly from the wafer. To study the roles of grooves, slurry flows were simulated using the volume of fluid method (two-phase model for air and slurry) for pads with no grooves, and for pads with circular grooves.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.05a
• /
• pp.239-239
• /
• 2004

화학적 기계연마 공정(CMP)은 반도체 웨이퍼를 수 천$\AA$m/min의 MRR로 2$\mu\textrm{m}$ 이내의 W(Total Thickness Variable) 조건을 만족시키는 초정밀 광역 평탄화 기술이다. 일반적인 CMP 방법은 서로 다른 회전 중심을 갖고 동일한 방향으로 회전하는 웨이퍼와 다공성 패드 사이에 연마액인 슬러리를 넣어 연마하는 것이다. CMP 공정기술은 1990년 대 중반에 개발되었으나, 아직까지 연마 메커니즘이 완벽하게 밝혀지지 않았다. 따라서 장비를 최적화하기 위해 실험에 의존적일 수밖에 없으나, 이러한 방법은 막대한 자금과 노력뿐만 아니라 상당한 시간을 필요로 하기 때문에, 앞으로 가속될 연마대상 재료의 변화 및 다양한 속도에 발맞출 수 없다.(중략)

• Proceedings of the KIEE Conference
• /
• 2006.07b
• /
• pp.1267-1268
• /
• 2006

Chemical mechanical polishing (CMP) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, the cost of ownership and cost of consumables are relatively high because of expensive slurry. In this paper, we studied the mixed abrasive slurry (MAS). In order to save the costs of slurry, the original silica slurry was diluted by do-ionized water (DIW). And then, $ZrO_2,CeO_2$, and $MnO_2$ abrasives were added in the diluted slurry in order to promote the mechanical force of diluted slurry. We have also investigate the possibility of mixed abrasive slurry for the oxide CMP application.