• 반도체디스플레이기술학회지
• /
• 제18권2호
• /
• pp.82-86
• /
• 2019

The reliability of 3D NAND flash memory cell is affected by the charge migration which can be divided into the vertical migration and the lateral migration. To clarify the difference of two migrations, the activation energy of the charge loss is extracted and compared in a conventional square device pattern and a new test pattern where the perimeter of the gate is exaggerated but the area is same. The charge loss is larger in the suggested test pattern and the activation energy is extracted to be 0.058 eV while the activation energy is 0.28 eV in the square pattern.

• 한국펄프종이공학회:학술대회논문집
• /
• 한국펄프종이공학회 1999년도 Pre-symposium of the 10th ISWPC Recent Advances in Paper Science and Technology
• /
• pp.239-244
• /
• 1999

aluminum sulfate (alum) as a representative retention aid in papermaking processes was added to pulp suspensions, and the aluminum components adsorbed on the pulp were investigated quantitatively by two types of X-ray elementary analyses with regard to simultaneous changes of their surface charges. X-ray photoelectron spectroscopy (XPS) and X-ray fluorescence analysis (XFA) were applied to determine the aluminum components retained in pulp pads up to ca. 10 nm and 100${\mu}$m depth, respectively. In other words, XPS was utilized to analyze the outermost surface layers of the samples, and XFA was available for measurement of their extensive regions. A particle charge detector (PCD) was used to monitor streaming potentials at various pHs of the pulp mixtures under moderate sharing conditions. At pH 4.5 of pulp suspensions containing alum, surface charges of pulp fibers varied from negative to slight negative (approximately neutral) according to adsorption of aluminum components onto the pulp fibers. Subsequently, when a dilute NaOH solution in limited amounts was added to pulp mixtures, both streaming potentials and surface aluminum content of the pulp fibers increased distinctly although little total aluminum retention increased. Further addition of alkali solutions brought drastic decreases of the surface charges and surface aluminum content, while total aluminum content, on the contrary, increased gradually under neutral conditions. These results indicate that residual aluminum ions remained in pulp suspensions are predominantly adsorbed on surfaces of pulp fibers by adequate alkali additions and they must sufficiently cationize the fiber surfaces with increases of somewhat cationic aluminum complexes formed on the surfaces. On the other hand, aluminum components formed in higher pH ranges have nearly no contribution to improvement of charge properties of the pulp fiber surfaces, even though aluminum retention in pulp pads increases. XPS and XFA analyses combined with streaming potential measurement using a PCD suggest close relationships between aluminum content on the pulp fiber surfaces and their charge properties.

• 한국전기전자재료학회논문지
• /
• 제33권6호
• /
• pp.445-449
• /
• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.255-255
• /
• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• 펄프종이기술
• /
• 제33권3호
• /
• pp.9-17
• /
• 2001

The floc characteristics of base paper stock for coating by the retention aid system consisting of polyacrylamide (high molecular weight low charge density, HMLC) and PEI without and with anionic inorganic oxide (IO) were investigated under various shear conditions of MDDA (modified dynamic drainage analyzer). The floc size was increased with cationic electrolytes dosage whatever inorganic oxide is applied or not. The effect of inorganic oxide on the floc size showed the different result between PAM and PEI. The smaller floc was obtained by PAM without inorganic oxide, but larger floc was obtained by PAM with inorganic oxide. However, the effect of shear force was not observed. Floc formation index was decreased by the addition of cationic electrolytes with or without inorganic oxide. Floc formation index had better correlation format formation index than floc size. The relationships between wet web permeability and mat air permeability showed the significant linear correlation ($R^2$=0.97~0.98) for HML PAM and PEI. Floc formation index gave more useful information than the retention measurement when the performance of retention aids is evaluated at the laboratory before applying at the paper mill.

• 전자공학회논문지
• /
• 제50권4호
• /
• pp.239-245
• /
• 2013

멀티 레벨 낸드 플레쉬 메모리에서 주위 셀의 문턱 전압상태에 따른 데이터 유지 특성을 연구하였다. 열을 가해 셀의 데이터 보전특성을 판정하는 열적 열하 특성에서 주목하는 셀의 문턱 전압이 변화하는데 문턱전압의 변화는 선택된 셀 주위에 있는 셀들이 가장 낮은 문턱 전압 상태로 있는 셀들의 수가 많을수록 커진다. 그 이유는 전하의 손실이 이루어지는 낸드 플레쉬 셀의 본질적인 특성 뿐 아니라, 주위 셀 사이의 측면 전계 때문이다. 전계에 대한 모사 결과로부터 전계의 증가 현상을 발견할 수 있고, 이로 인한 전하의 손실이 소자 스케일 다운에 따라 더 증가함을 알 수 있다.

• 펄프종이기술
• /
• 제32권3호
• /
• pp.18-24
• /
• 2000

To evaluate the efficiency of various cationic starches in improving retention drainage and strength properties of newsprints which are being made using extensive amount of domestic recycled wastepapers in a highly closed papermaking system diverse cationic starches have been prepared and tested. In the case of cationic starches with low charge density as the degree of substitution increas-es fines retention increased. Results also showed that the retention efficiency decreased sub-stantially for cationic starches with low DS when the conductivity of white water inceased. Tensile strength increased with the addition of cationic starches and then decreased. On the other hand internal bonding strength increased linearly with the addition of cationic starch. Oxidizing treatment of cationic starch was detrimental for retention and freeness improve-ment. Also crosslinking treatment of wet processed cationic starches made cationic starches less effective in retention and drainage.

• 한국환경보건학회지
• /
• 제35권1호
• /
• pp.64-70
• /
• 2009

The aims of this study is to examine the effects of the changes in HRT(Hydraulic Retention Time) and media charge in a water-mill, among other operation factors, on the nitrogen and phosphorus removal in order to use up-flow anaerobic reactors, anoxic reactors and water-mill aerobic reactors for sewage treatment. The extension of HRT improved the nitrogen removal efficiency, however the removal pattern was constant regardless of HRT. The removal of phosphorus was constant (80%-90%) regardless of the change in HRT. The removal rate with change in influx load varied such that at the OLR (Organic Load Rate) of 1-3 kg/d, the T-N removal efficiency was 80.7%-88.9% and the T-P removal efficiency was 82.9%-89.3% while at the NLR (Nitrogen Loading Rate) of 0.108-0.156 kg/d the removal efficiencies were 80.7-88.9% (T-N) and 82.9-89.3% (T-P). The analyses of the nitrogen and phosphorous removal characteristics with the C/N and C/P ratio showed that the mean T-N removal rate was 88% at the C/N ratio of 1.2-2.6, and that the mean T-P removal rate was 86% at the C/P ratio of 7.2-14.1. Also, the analysis of nitrogen and phosphorous removal characteristics were analyzed in relation to media charge. The comparison between with and without media charge in the water-mill showed that while the nitrogen removal efficiencies were 86-94% and 85-89% respectively, the difference of phosphorous removal efficiencies were between the two conditions was not significant, thus it suggested that the media charge has less effect on the removal efficiency of phosphorous compared to that of nitrogen.

• 한국세라믹학회지
• /
• 제49권6호
• /
• pp.631-636
• /
• 2012

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.94-95
• /
• 2007

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program speed, reliability of memory device on interface trap between Si substrate and tunneling oxide was investigated. The devices were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SONOS cell transistors with larger interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. Therefore, to improve SANOS memory characteristic, it is very important to optimize the interface trap and charge trapping layer.