• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.96-100
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• 2001

We have measured the space charge distribution and PD patterns simultaneously in XLPE under AC voltages by modified PEA method in order to investigate the effect of space charge on PD patterns in XLPE with air-gap. From the experimental results, we found that the dynamic space charge accumulated on the surface of XLPE due to the PD dominantly affects the PD pattern in the dielectric-barrier structure and governs the voltage across the air-gap. Moreover, the space charge formed by applying DC voltage still remained after applying AC voltage, which means that the space charge formed during DC strength test is likely to be fatal to the long-time AC insulating characteristics of HV equipments. On the other hand, the PD patterns was much influenced by the pre-formed space charge by DC application. Therefore, it is possible to detect the effects of space charge by monitoring the infinitesimal change of PD patterns before and after DC strength.

• 대한기계학회논문집B
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• 제33권9호
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• pp.722-727
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• 2009

The effect of the intake flow on the spray structure of a high pressure 11-hole fuel injector were examined in a single cylinder optical direct injection spark ignition (DISI) engine. The effects of injection timing and in-cylinder charge motion were investigated using the 2-dimensional Mie scattering technique. It was confirmed that in the homogeneous charge mode, the in-cylinder swirl charge motion played a major role in the fuel spray distribution during the induction stroke rather than the tumble flow. But, in the stratified charge mode, the effect of the in-cylinder charge was not so large that the injected spray pattern was nearly maintained and the increase of in-cylinder pressure by the upward moving piston reduced the fuel spray penetration.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.530-537
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• 2013

An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2006년도 춘계학술대회
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• pp.255-258
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• 2006

In this paper, the new method which is monitoring quantity of particles using by ion-counter has been developed. ISPM system is composed by Gerdien type ion-counter (house-made), DC power supply and electrometer. Ion-counter applied positive voltage could detect only positive charged particles. Therefore charged particles to Boltzmann equilibrium distribution or to some identified charge distribution can be detected by ion-counter. Ion-counter could install on the exhaust line of process equipment since pressure loss is structurally low. ISPM system has been certified by comparison with the result of SMPS (Scanning Mobility Particle Sizer) system. The relation coefficiency is above 0.98 about $20{\sim}300nm$ particles with identified charge distribution under $0.1{\sim}10.0$ Torr.

• Bulletin of the Korean Chemical Society
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• 제26권7호
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• pp.1083-1089
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• 2005

Most experimental studies available in the literature on filtration are based on observed average zeta potential of particles (usually 10 measurements). However, analyses of data using the average zeta potential alone can lead to misleading and erroneous conclusions about the attachment behavior because of the variation of particle zeta potentials and the heterogeneous distribution of the collector surface charge. To study characteristics of zeta potential, zeta potential distributions (ZPDs) of silica particles under 9 different chemical conditions were investigated. Contrary to many researchers’ assumptions, most of the ZPDs of silica particles were broad. The solids concentration removal was better near the isoelectric point (IEP) as many researchers have noticed, thus proper destabilization of particles is very important to achieve better particle removal in particle separation processes. While, the mean zeta potential of silica particles at a given coagulant dose was a function of particle concentration; the amount of needed coagulant for particle destabilization was proportional to the total surface charge area of particles in the suspension.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집 센서 박막재료연구회 및 광주 전남지부
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• pp.82-85
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• 2008

Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.155-158
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• 1988

The fabrication of devices using plans technology could lend to n serious degradation in the breakdown voltage as a result of high electric field at the edges. An elegant approach to reducing the electric field at the edge is by using field limiting ring. The presence of surface charge has n strong influrence on the depletion layer spreading at the surface region because this charge complements the charge due to the ionized acceptors inside the depletion layer. Surface charge of either polarity can lower the breakdown voltage because it affects the distribution of electric field st the edges. In this paper we discuss the influrences of fixed oxide charge on the breakdown voltage of the p+/n junction with field limiting ring(or without field limiting ring).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.311-312
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• 2007

Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

• Bulletin of the Korean Chemical Society
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• 제21권7호
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• pp.671-672
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• 2000

• Transactions on Electrical and Electronic Materials
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• 제5권4호
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• pp.148-152
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• 2004

The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.