• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.365-368
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• 2004

Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.465-470
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• 2010

The charge pump in a phase-locked loop is a key block in determining reference spurs of the VCO output signal. To reduce reference spurs, the current mismatch in the charge pump must be minimized. This paper presents a dual compensation method to reduce the current mismatch. The proposed charge pump and PLL were realized in a $0.18{\mu}m$ CMOS process. Measured current matching characteristics were achieved with less than 1.4% difference and with the current variation of 3.8% in the pump current over the charge pump output voltage range of 0.35-1.35V at 1.8V. The reference spur of the PLL based on the proposed charge pump was measured to be -71dBc.

• Analytical Science and Technology
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• v.5 no.2
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• pp.213-216
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• 1992

Semiinsulating GaAs crystals employing LPLEC technique should be grown from the Ga-rich melt due to a very low incorporation of unintentional impurities such as carbon (<$10^{15}cm^{-3}$). High resisitivity of this material can be derived from the balanced compensation among not only EL2 deep donors and carbon acceptors but also H1 double charge native acceptors(Ev + 77meV, Ev + 200 meV) and H2 native acceptors(Ev + 68 meV). Considering of the complicated compensation mechanism using statistical calculation of the electron occupancy of each level, SI GaAs crystal with low impurity contents(<$10^{15}cm^{-3}$) can be successfully obtained by maintaining the melt composition around 0.45 As mole fraction.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.472-473
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• 2008

This paper presents a charge pump used in frequency synthesizer for PHS application. The up/down current mismatch of charge pump has a critical effect on the phase noise and spur performance in frequency synthesizer. Therefore, the mismatch compensation scheme is proposed in this paper. And, the measurement results show that the mismatch can be reduced below 5 %.

• International Commerce and Information Review
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• v.10 no.4
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• pp.513-532
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• 2008

The purpose of this study was to analyze which factors have had impacts on extension export insurance charge of Korean export insurance. In order to attainment of this study, an empirical study was proceeded. The export insurance charge was hired as the dependent variable and export insurance premium, insurance compensation charge, export insurance collection charge and export insurance fund were used as independent variables. Data was used for estimation are the annually data from 1969 to 2007. From results of this analysis, we find the hired variables have highly correlation among them and the most influential factor turns out to be export insurance fund. Main results of this study was as follows : i) The export insurance fund must be increased immediately. ii) It is necessary that Korea Export Insurance Corporation give their attention to the compensate amount of export insurance compensation on specific insurance item. iii) It is necessary that Korea Export Insurance Corporation extension the collection efforts of the export insurance. iv) A reasonable raising of export insurance premium need to be done.

• Proceedings of the KIPE Conference
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• 2013.11a
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• pp.200-201
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• 2013

This paper investigates a new approach for Li-Ion battery state-of-charge (SOC) estimation using sliding mode observer (SMO) technique including parameters aging compensation via recursive least squares (RLS). The main advantages of this approach would be low computational load, easiness of implementation along with the robustness of the method for internal battery model parameters estimation. The proposed algorithm was first tested on a set of acquired battery data using implementation in Simulink and later developed as C-code module for firmware application.

• Analytical Science and Technology
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• v.8 no.4
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• pp.663-668
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• 1995

Ion transport of a polypyrrole/chloride (PPy/Cl) film and a polypyrrole/poly(styenesulfonate) (PPy/PSS) film as a function of applied dc potential was investigated by employing electrogravimetric impedance technique and electrochemical impedance technique. The cation and anion contribution to the whole charge capacitance and the diffusion coefficients of cation and anion in a PPy/PSS film were calculated by fitting the electrogravimetric impedance data with proposed model circuit. The diffusion coefficients of $Na^+$ in a 1 M $NaClO_4$ solution are over 1 order of magnitude larger than those of $ClO{_4}^-$, and $ClO{_4}^-$ contribution to charge compensation decreases as dc potential lowers. The charge compensation of a PPy/Cl film ir a 1 M CsCl solution is carried out largely by $Cl^-$ at 0.2 V vs. Ag/AgCl and by $Cs^+$ as well as $Cl^-$ at -0.4 V.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.141-144
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• 2002

Several charge Injection compensation circuits, such as, the dummy transistor circuit, the switched OP-amp circuit, the switched capacitor circuit, were fabricated and the test results were compared. The differences between SPICE simulation results and measurements were within around 10%.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1896-1898
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• 2001

An offset problem caused by the static parasitic capacitors is analyzed and then some techniques to reduce their effect on the capacitive position sensor are presented. Also new offset compensation technique is proposed that by adjusting the magnitudes of the modulating signals independently, the charge imbalance between electrodes caused by the parasitic capacitors is eliminated without sensor gain variation. Simulation results are given to validate the proposed compensation technique.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.367-370
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• 2002

CRTs can be improved by means of magnetic quadrupoles. Areas of improvement are convergence, spot shape, image-flatness and space charge compensation.