• 제목/요약/키워드: Charge compensation

검색결과 133건 처리시간 0.03초

Multi result MOSFET의 에피층 농도에 따른 전기적 특성분석 (Electrical characteristics of the multi-result MOSFET)

  • 김형우;김상철;서길수;김은동
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.365-368
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    • 2004
  • Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.

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위상 고정 루프의 기준 스퍼를 감소시키기 위한 이중 보상 방식 전하 펌프 (A Dual-compensated Charge Pump for Reducing the Reference Spurs of a Phase Locked Loop)

  • 이동건;이정광;정항근
    • 전기학회논문지
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    • 제59권2호
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    • pp.465-470
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    • 2010
  • The charge pump in a phase-locked loop is a key block in determining reference spurs of the VCO output signal. To reduce reference spurs, the current mismatch in the charge pump must be minimized. This paper presents a dual compensation method to reduce the current mismatch. The proposed charge pump and PLL were realized in a $0.18{\mu}m$ CMOS process. Measured current matching characteristics were achieved with less than 1.4% difference and with the current variation of 3.8% in the pump current over the charge pump output voltage range of 0.35-1.35V at 1.8V. The reference spur of the PLL based on the proposed charge pump was measured to be -71dBc.

LPLEC법으로 성장시킨 GaAs 단결정의 Compensation (Compensation in LPLEC GaAs Single Crystals)

  • 고경현
    • 분석과학
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    • 제5권2호
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    • pp.213-216
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    • 1992
  • 저압식 LEC(LPLEC)법으로 성장시킨 고순도의 갈륨비소 단결정내에는 탄소 등의 불순물의 유입량이 $10^{15}cm^{-3}$이하로 매우 작아지게 되므로 이 경우 SI(Semi-insulating) 성질을 가진 단결정을 제조하기 위해서는 melt 중의 As분율을 낮추어 주어야 한다. 이 경우 큰 비저항을 가지는 이유는 E12와 탄소간의 compensation 이외에도 native defect인 H1(Ev+77meV, Ev+200 meV)의 double charge acceptor와 H2(Ev+68meV)의 기여도 동시에 고려해야 한다. 통계적인 기법으로 compensation 기구를 분석하면 SI GaAs는 탄소량이 $10^{15}cm^{-3}$이하일 때 melt의 조성이 0.45 근처로 유지하면 제조가 가능하다.

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Up/Down Current Mismatch 보상 기능을 추가한 Charge Pump 회로의 설계 (A Design of Charge Pump with Up/Down Current Mismatch Compensation for PHS Application)

  • 김상우;박준성;고동현;부영건;이강윤
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.472-473
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    • 2008
  • This paper presents a charge pump used in frequency synthesizer for PHS application. The up/down current mismatch of charge pump has a critical effect on the phase noise and spur performance in frequency synthesizer. Therefore, the mismatch compensation scheme is proposed in this paper. And, the measurement results show that the mismatch can be reduced below 5 %.

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수출보험 운영합리화를 위한 실증연구 (An Empirical Study for the Running Rationalization of Korean Export Insurance)

  • 김지용
    • 통상정보연구
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    • 제10권4호
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    • pp.513-532
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    • 2008
  • The purpose of this study was to analyze which factors have had impacts on extension export insurance charge of Korean export insurance. In order to attainment of this study, an empirical study was proceeded. The export insurance charge was hired as the dependent variable and export insurance premium, insurance compensation charge, export insurance collection charge and export insurance fund were used as independent variables. Data was used for estimation are the annually data from 1969 to 2007. From results of this analysis, we find the hired variables have highly correlation among them and the most influential factor turns out to be export insurance fund. Main results of this study was as follows : i) The export insurance fund must be increased immediately. ii) It is necessary that Korea Export Insurance Corporation give their attention to the compensate amount of export insurance compensation on specific insurance item. iii) It is necessary that Korea Export Insurance Corporation extension the collection efforts of the export insurance. iv) A reasonable raising of export insurance premium need to be done.

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Sliding Mode Observer (SMO) using Aging Compensation based State-of-Charge(SOC) Estimation for Li-Ion Battery Pack

  • Kim, Jonghoon;Nikitenkov, Dmitry;Denisova, Valeria
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2013년도 추계학술대회 논문집
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    • pp.200-201
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    • 2013
  • This paper investigates a new approach for Li-Ion battery state-of-charge (SOC) estimation using sliding mode observer (SMO) technique including parameters aging compensation via recursive least squares (RLS). The main advantages of this approach would be low computational load, easiness of implementation along with the robustness of the method for internal battery model parameters estimation. The proposed algorithm was first tested on a set of acquired battery data using implementation in Simulink and later developed as C-code module for firmware application.

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Electrogravimetric and Electrochemical Ac Response of Polypyrrole Films

  • Yang, Haesik;Lee, Hochun;Kwak, Juhyoun
    • 분석과학
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    • 제8권4호
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    • pp.663-668
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    • 1995
  • Ion transport of a polypyrrole/chloride (PPy/Cl) film and a polypyrrole/poly(styenesulfonate) (PPy/PSS) film as a function of applied dc potential was investigated by employing electrogravimetric impedance technique and electrochemical impedance technique. The cation and anion contribution to the whole charge capacitance and the diffusion coefficients of cation and anion in a PPy/PSS film were calculated by fitting the electrogravimetric impedance data with proposed model circuit. The diffusion coefficients of $Na^+$ in a 1 M $NaClO_4$ solution are over 1 order of magnitude larger than those of $ClO{_4}^-$, and $ClO{_4}^-$ contribution to charge compensation decreases as dc potential lowers. The charge compensation of a PPy/Cl film ir a 1 M CsCl solution is carried out largely by $Cl^-$ at 0.2 V vs. Ag/AgCl and by $Cs^+$ as well as $Cl^-$ at -0.4 V.

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Charge Injection 보상 회로의 비교

  • 박상훈;김수은;박홍준
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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    • pp.141-144
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    • 2002
  • Several charge Injection compensation circuits, such as, the dummy transistor circuit, the switched OP-amp circuit, the switched capacitor circuit, were fabricated and the test results were compared. The differences between SPICE simulation results and measurements were within around 10%.

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정전형 MEMS 검출기의 새로운 Offset 보상 방법 (New Offset-compensation Technique for Capacitive MEMS-Sensor)

  • 민동기;전종업
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 하계학술대회 논문집 C
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    • pp.1896-1898
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    • 2001
  • An offset problem caused by the static parasitic capacitors is analyzed and then some techniques to reduce their effect on the capacitive position sensor are presented. Also new offset compensation technique is proposed that by adjusting the magnitudes of the modulating signals independently, the charge imbalance between electrodes caused by the parasitic capacitors is eliminated without sensor gain variation. Simulation results are given to validate the proposed compensation technique.

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Using Magnetic Quadrupoles in Cathode-Ray Tubes

  • Sluyterman, A.A.S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.367-370
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    • 2002
  • CRTs can be improved by means of magnetic quadrupoles. Areas of improvement are convergence, spot shape, image-flatness and space charge compensation.

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