• Title/Summary/Keyword: Charge Profile

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Reliability Analysis by Lateral Charge Migration in Charge Trapping Layer of SONOS NAND Flash Memory Devices (SONOS NAND 플래시 메모리 소자에서의 Lateral Charge Migration에 의한 소자 안정성 연구)

  • Sung, Jae Young;Jeong, Jun Kyo;Lee, Ga Won
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.4
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    • pp.138-142
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    • 2019
  • As the NAND flash memory goes to 3D vertical Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) structure, the lateral charge migration can be critical in the reliability performance. Even more, with miniaturization of flash memory cell device, just a little movement of trapped charge can cause reliability problems. In this paper, we propose a method of predicting the trapped charge profile in the retention mode. Charge diffusivity in the charge trapping layer (Si3N4) was extracted experimentally, and the effect on the trapped charge profile was demonstrated by the simulation and experiment.

Understanding of the effect of charge size to temperature profile in the Czochralski method (쵸크랄스키법에서 온도 프로파일에 대한 충진사이즈의 효과에 대한 이해)

  • Baik, Sungsun;Kwon, Sejin;Kim, Kwanghun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.4
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    • pp.141-147
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    • 2018
  • Solar energy has attracted big attentions as one of clean and unlimited renewable energy. Solar energy is transformed to electrical energy by solar cells which are comprised of multi-silicon wafer or mono-silicon wafer. Monosilicon wafers are fabricated from the Czochralski method. In order to decrease fabrication cost, increasing a poly-silicon charge size in one quartz crucible has been developed very much. When we increase a charge size, the temperature control of a Czochralski equipment becomes more difficult due to a strong melt convection. In this study, we simulated a Czochralski equipment temperature at 20 inch and 24 inch in quartz crucible diameter and various charge sizes (90 kg, 120 kg, 150 kg, 200 kg, 250 kg). The simulated temperature profiles are compared with real temperature profiles and analyzed. It turns out that the simulated temperature profiles and real temperature profiles are in good agreement. We can use a simulated profile for the optimization of real temperature profile in the case of increasing charge sizes.

Interfacial charge Behaviors in XLPE/SXLPE Laminates (XLPE/SXLPE laminate의 계면전하 거동)

  • 고정우;남진호;서광석
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.897-900
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    • 2001
  • Space charge distributions in silane crosslinked polyethylene (SXLPE)/ crosslinked polyethylene (XLPE) laminates was investigated using a pulsed electroacoustic (PEA) method. XLPE shows heterocharge while SXLPE shows homocharge. Positive charge is accumulated at the interface of SXLPE/XLPE laminate when applied electric field is more than 20 kV/mm. The charge profile at various temperatures was also acquired using temperature-controllable PEA system. Although applied electric field is only 8.6 kV/mm, positive interfacial charge starts to appear near 50$^{\circ}C$.

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Interfacial Charge Behaviors in SXLPE/XLPE Laminates (SXLPE/XLPE laminate의 계면전하 거동)

  • 고정우;남진호;서광석
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.2
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    • pp.127-132
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    • 2002
  • Space charge distributions and behaviors in silane crosslinked polyethylene(SXLPE)/ crosslinked polyethylene(XLPE) laminates were investigated using a pulsed electroacoustic (PEA) method. In case of monolayer, XLPE shows heterocharge while SXLPE shows homocharge. It was observed that charges were accumulated at the interface of SXLPE/XLPE laminate when applied electric field was more than 20kV/mm. The charge profile at various temperatures was also acquired using temperature-controllable PEA system. Although applied electric field is only 8.6 kV.mm, positive interfacial charge starts to appear near 50$^{\circ}C$. It was found that the interfacial charge behavior of SXLPE/XLPE laminate under low voltage at high temperature is corresponding to that under high voltage at room temperature.

Electrokinetic flow and electroviscous effect in a charged slit-like microfluidic channel with nonlinear Poisson-Boltzmann field

  • Chun, Myung-Suk;Kwak, Hyun-Wook
    • Korea-Australia Rheology Journal
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    • v.15 no.2
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    • pp.83-90
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    • 2003
  • In cases of the microfluidic channel, the electrokinetic influence on the transport behavior can be found. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is applied in the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like microchannel is obtained via the Green's function. An explicit analytical expression for the induced electrokinetic potential is derived as functions of relevant physicochemical parameters. The effects of the electric double layer, the zeta potential of the solid surface, and the charge condition of the channel wall on the velocity profile as well as the electroviscous behavior are examined. With increases in either electric double layer or zeta potential, the average fluid velocity in the channel of same charge is entirely reduced, whereas the electroviscous effect becomes stronger. We observed an opposite behavior in the channel of opposite charge, where the attractive electrostatic interactions are presented.

An Investigation of Locally Trapped Charge Distribution using the Charge Pumping Method in the Two-bit SONOS Cell

  • An, Ho-Myoung;Lee, Myung-Shik;Seo, Kwang-Yell;Kim, Byung-Cheul;Kim, Joo-Yeon
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.4
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    • pp.148-152
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    • 2004
  • The direct lateral profile and retention characteristics of locally trapped-charges in the nitride layer of the two-bit polysilicon-oxide-nitride-oxide-silicon (SONOS) memory are investigated by using the charge pumping method. After charges injection at the drain junction region, the lateral diffusion of trapped charges as a function of retention time is directly shown by the results of the local threshold voltage and the trapped-charges quantities.

A Study on Space Charge Distribution of HDPE Mixed with EVA (HDPE/EVA혼합수지의 공간 전하 분포에 관한 연구)

  • Jung, Eui-Hwan;Heo, Jun;Yoon, Jae-Hun;Lim, Kee-Joe;Lee, Hyung-Kyu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.11
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    • pp.2229-2235
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    • 2009
  • In this paper, each specimen blended at weight proportions of 80% HDPE to 20% EVA, 70% HDPE to 30% EVA, 60% HDPE to 40% EVA, and 50% HDPE to 50% EVA was manufactured respectively. The insulation performances of the proposed insulator were compared with conventional XLPE, main insulating material of CV cable on the basis of the investigation results of DC insulation performances. From the space charge density, electric field and potential profiles with raising DC voltage and time variation in HE82, distortion of electric field distribution was improved. As EVA mixed into the bulks acts as nucleation in crystallization process of HDPE, the size of spherulites became decreased and finally formed continuous network structure. Ultimately, it resulted from extinction of space charge in the interfacial region of spherulites.

짧은 채널 효과를 감소시키기 위한 이온주입 변수의 조절

  • Yu, Jong-Seon;Kim, Yeo-Hwan
    • ETRI Journal
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    • v.9 no.1
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    • pp.97-103
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    • 1987
  • 짧은 채널($L<1\mum$) MOSFET의 전기적 변수, 특히 문턱전압(threshold voltage)을 최적화시키기 위하여 분석적 문턱전압 모델을 개발하였다. 채널 영역에서의 붕소profile은 계단 (step) profile로 근사시켜 표면전하층과 기판전하층으로 구성하였다. 최대공핍층내에 있는 두 전하층의 각각에 대하여 기하학적으로 근사시킨 전하분배(charge sharing)모델을 적용하고 이차원적 분석을 이용하여 짧은 채널 효과를 계산하였다. 본 모델을 실험치와 비교하고 이온주입 공정의 최적조건을 이끌어내는 데 필요한 변수에 대하여 논의하였다.

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Optimal Scheduling for Dynamic Ice Storage System with Perfectly Predicted Cooling Loads (동적제빙형 빙축열시스템에 대한 최적운전계획)

  • Lee, Kyoung-Ho;Lee, Sang-Ryoul;Choi, Byoung-Youn;Kwon, Seong-Chul
    • Proceedings of the KSME Conference
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    • 2001.06d
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    • pp.286-291
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    • 2001
  • This paper describes an optimal scheduling for ice slurry systems for energy cost saving. The optimization technique applied in the study is the dynamic programming method, for which the state variable is the storage in the ice storage tank and the control variable is the state of chiller's on-off switching. Though the costs during charge period is included in optimization by taking the average cost of ice per hour for slurry making, the time horizon for the simulation is limited building cooling period because accurate charge rate from the ice maker into the ice storage tank cannot be estimated during the charge period. In the operating simulation after optimizing procedure, energy consumption and operating cost for the optimal control are calculated and compared with them for a conventional control with one case of cooling load profile.

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A Fuzzy H Filter Design for State of Charge Estimation (잔존충전용량 추정을 위한 퍼지 H 필터 설계)

  • Yoo, Seog-Hwan;Wu, Xuedong
    • Journal of the Korean Institute of Intelligent Systems
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    • v.20 no.2
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    • pp.214-219
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    • 2010
  • This paper deals with a nonlinear fuzzy $H_{\infty}$ filter design for SOC(state of charge) estimation in Lithium polymer battery. The dynamic equation of the battery cell is modeled as a T-S fuzzy system and the filter is designed via solutions of linear matrix inequalities. In order to illustrate the performance of the designed filter, a computer simulation is performed using the experimental data with the UDDS(urban dynamometer driving schedule) current profile.