• Title/Summary/Keyword: Characteristic of Films

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Conductivity Characteristic for Temperature of Stearic acid LB films (지방산 LB막의 온도에 대한 전기전도도 특성)

  • Lee, Jun-Ho;Kim, Kyoung-Hwan;Kwon, Yong-Soo
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.884-885
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    • 1998
  • The electrical characteristics of Stearic acid Langmuir-Blodgett(LB) films were investigated to develop the gas sensor using LB films. The deposition status of LB films were verified I-V characteristic which was increased with an applied voltage for the number of layers and decreased as increasing the distance of electrode. The conductivity of Stearic acid LB films was $10^{-8}[S/cm]$, which is typical of semiconductor. The conductivity of LB films were increased as the temperature was increased. The activation energy was about 1[eV].

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Characteristic and moisture permeability of SiOxCy thin film synthesized by Atmospheric pressure-plasma enhanced chemical vapor deposition

  • Oh, Seung-Chun;Kim, Sang-Sik;Shin, Jung-Uk
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2011.05a
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    • pp.171-171
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    • 2011
  • Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.

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A Study of The Photosensitive Characteristic and Fabrication of Polyimide Thin Film by Dry Processing (건식법을 이용한 폴리이미드 박막의 제조 및 광특성)

  • Lee, Boong-Joo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.1
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    • pp.139-141
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    • 2007
  • Thin films of polyimide (Pl) were fabricated by a vapor deposition polymerization method (VDPM) and studied for the photosensitive characteristic. Polyamic acid (PAA) thin films fabricated by vapor deposition polymerization (VDP) from 6FDA and 4-4' DDE were converted to PI thin films by thermal curing. From AFM and Ellipsometer experimental, the films thickness was decreased and the reflectance was increased as the curing temperature was increased. Those results implies that thin film is uniform. From UV-Vis spectra, PI thin films showed high absorbance in 225 $\sim$ 260 [nm] region.

A Study on the MOCVD $PbTiO_3$ Thin Films (MOCVD $PbTiO_3$ 박막의 특성에 관한 연구)

  • 송한상;최두진;유광수;정형진;김창은
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.2 no.2
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    • pp.40-52
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    • 1992
  • $PbTi0_3$ thin films were deposited at $550^{\circ}C$ by MOCVD method using titanium-iso-propoxide [$Ti(OC_3H_7)_4$] and tetra-ethyl-lead $[Pb(C_2H_5)_4]$as starting materials. In the present study, Ar and $O_2$were used as a carrier gas and a reaction gas, respectively, and the change of thickness and refractive index, Xray diffraction analysis, and CV characteristic measurements of the films were systematically investigated. As a result of CV characteristic analysis of the annealed $PbTiO_3$ thin films, it is assumed that the films interact with Si substrate at the interface, and X-ray diffraction patterns of the films show characteristic peaks for $PbTiO_3$ With increasing the annealing temperature and time, the thickness of the films tends to decrease but their refractive index increases.

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The Characteristic Curves of Commercial Medical X-ray Films (상용 의학용 X-ray 필름의 특성곡선)

  • Heo, Hoon;Jeong, Yeon-Tae;Lee, Jae-Sung
    • Journal of the Korean Graphic Arts Communication Society
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    • v.19 no.2
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    • pp.12-21
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    • 2001
  • For the purpose of determining characteristics of widely used commercial medical x-ray films, which are used for obtaining the Linac-grams for radiational treatment of cancers, we placed several commercial x-ray films at a fixed distance form the linear accelerator. After varying the exposed amount of radiation step by step, we could obtain a continually increasing density image for each film whose densities were determined by microdensitometer readings. The characteristic curves of the films were obtained by plotting the densities vs. the exposed radiation amounts, and their ${\gamma}$ values were determined. These values can be used to suggest a minimum necessary amount of exposed radiation to get a useful Linac-gram. The measured ${\gamma}$ values of the characteristic curves of the Kodak-DVP/RA-1 film were 1.73 when used 6MV x-ray, 1.70 when used 15MV of intensity. For the Konica-AX film, ${\gamma}$ values were 1.29 and 1.18 respectively. The result suggests that the effective conditions for high resolution of a L-gram be 6 MV of x-ray intensity and about 3 rad of exposed dose on a Kodak-DVP/RA-1 film.

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The Study on Characteristic of Phase Transition in differential Chalcogenide Thin Films ($Se_1Sb_2Te_2$ 칼코게나이드 박막의 두께에 따른 상변화 특성 연구)

  • Lee, Jae-Min;Yang, Sung-Jun;Shin, Kyung;Chung, Hong-Bay;Kim, Young-Hae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.340-343
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    • 2004
  • The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.

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The Characteristic of $SnO_2$ Thin Films Grown by LP-Thermal MOCVD (LP-Thermal MOCVD 방법을 이용한 $SnO_2$ 박막의 증착 시간에 따른 특성)

  • Jeong, Jin
    • Journal of Integrative Natural Science
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    • v.1 no.1
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    • pp.54-57
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    • 2008
  • This report examines the variation on structural properties of $SnO_2$ thin films. TEM studies shows some of the interfaces to be atomically faceted. Secondary X-ray photoelectron Spectroscopy Analysis(XPS) depth profiles show that films have a uniform composition along the depth.

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Study on Characteristics of Digital Realism Aspect for HMD based Virtual Reality Films (HMD 기반 가상현실 영화의 디지털 리얼리즘적 특성에 대한 연구)

  • Kang, Jiyoung
    • Journal of Digital Contents Society
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    • v.18 no.5
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    • pp.849-858
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    • 2017
  • With the fast improvement of software and hardware technology of Virtual Reality, VR(Virtual Reality) film get attention for the new possibility of future film. Already, the production of virtual reality film festivals and Hollywood films is highly active, but it is still poorly related to virtual reality films in Korea. Due to this, this research analyze VR film with Realism films and Post-modernism films in four aspects that are film's frame(Mise-en-$Sc{\grave{e}}ne$), shot(montage), vew point and interactivity to deduct characteristics of VR film. Moreover, we also deduct an esthetical characteristic of VR films beyond the Realism films and Post-modern Films through analysing various VR films. This can be said as 'Digital Realism' that is come from the viewers' positive interaction and realization of Realism through Virtual Reality technology. There will be a successful development of VR film based on this research that analyse suitable directing method for Virtual Reality environment. At last, this research focused on characteristics of digital realism aspect for HMD based first person view VR animation .

Annealing Characteristic of Phosphorus Implanted Silicon Films using an Ion Mass Doping Method (Ion Mass Doping 법을 이용한 Phosphorus 주입된 실리콘 박막의 Annealing 특성)

  • 강창용;최덕균;주승기
    • Journal of Surface Science and Engineering
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    • v.27 no.4
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    • pp.234-240
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    • 1994
  • A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

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The Improvement of Magnetic Properties of CoCr Thin Film for Perpendicular Magnetic Recording Media (수직자기기록매체용 CoCr박막의 자기적 특성 개선에 관한 연구)

  • 공석현;손인환;최형욱;최동진;김경환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.419-422
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    • 1999
  • We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.

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