• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.884-885
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• 1998

The electrical characteristics of Stearic acid Langmuir-Blodgett(LB) films were investigated to develop the gas sensor using LB films. The deposition status of LB films were verified I-V characteristic which was increased with an applied voltage for the number of layers and decreased as increasing the distance of electrode. The conductivity of Stearic acid LB films was $10^{-8}[S/cm]$, which is typical of semiconductor. The conductivity of LB films were increased as the temperature was increased. The activation energy was about 1[eV].

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.171-171
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• 2011

Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.

• 전기학회논문지
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• 제56권1호
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• pp.139-141
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• 2007

Thin films of polyimide (Pl) were fabricated by a vapor deposition polymerization method (VDPM) and studied for the photosensitive characteristic. Polyamic acid (PAA) thin films fabricated by vapor deposition polymerization (VDP) from 6FDA and 4-4' DDE were converted to PI thin films by thermal curing. From AFM and Ellipsometer experimental, the films thickness was decreased and the reflectance was increased as the curing temperature was increased. Those results implies that thin film is uniform. From UV-Vis spectra, PI thin films showed high absorbance in 225 $\sim$ 260 [nm] region.

• 한국결정성장학회지
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• 제2권2호
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• pp.40-52
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• 1992

Titanium-iso-propoxide[$Ti(OC_3H_7)_4$]와 Tetra-ethyl-lead $[Pb({C_2}{H_5})_4]$를 사용한 MOCVD법으로 PbTi$O_3$박막을 55$0^{\circ}C$에서 증착하였다. Ar과 $O_2$를 각각 운반 및 반응기체로 사용하였으며, 열처리에 따른 박막의 두께와 굴절지수의 변화, Xtjs 회절 분석, CV 특성 측정등을 행하였다. 열처리에 따른 CV 특성 측정 결과 PbTi$O_3$는 Si기판과 계면 반응을 하는 것으로 생각되며, X선 회절 분석 결과 $PbTiO_3$의 특성 peak들이 관찰되었다. 열처리 시간 및 온도의 증가에 따라 박막의 두께는 감소하고, 굴절지수는 증가하는 경향을 보여 주었다.

• 한국인쇄학회지
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• 제19권2호
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• pp.12-21
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• 2001

For the purpose of determining characteristics of widely used commercial medical x-ray films, which are used for obtaining the Linac-grams for radiational treatment of cancers, we placed several commercial x-ray films at a fixed distance form the linear accelerator. After varying the exposed amount of radiation step by step, we could obtain a continually increasing density image for each film whose densities were determined by microdensitometer readings. The characteristic curves of the films were obtained by plotting the densities vs. the exposed radiation amounts, and their ${\gamma}$ values were determined. These values can be used to suggest a minimum necessary amount of exposed radiation to get a useful Linac-gram. The measured ${\gamma}$ values of the characteristic curves of the Kodak-DVP/RA-1 film were 1.73 when used 6MV x-ray, 1.70 when used 15MV of intensity. For the Konica-AX film, ${\gamma}$ values were 1.29 and 1.18 respectively. The result suggests that the effective conditions for high resolution of a L-gram be 6 MV of x-ray intensity and about 3 rad of exposed dose on a Kodak-DVP/RA-1 film.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.340-343
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser hem: hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. This letters researched into the characteristic of phase change transition in differential Chalcogenide thin films materials. The electrode used Al and experimented on 100nm, 300nm, 500nm respectively.

• 통합자연과학논문집
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• 제1권1호
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• pp.54-57
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• 2008

This report examines the variation on structural properties of $SnO_2$ thin films. TEM studies shows some of the interfaces to be atomically faceted. Secondary X-ray photoelectron Spectroscopy Analysis(XPS) depth profiles show that films have a uniform composition along the depth.

• 디지털콘텐츠학회 논문지
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• 제18권5호
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• pp.849-858
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• 2017

가상현실 관련 하드웨어와 소프트웨어 기술의 빠른 성장과 함께 가상현실 영화는 새로운 영화의 가능성으로 주목받고 있다. 이미 세계 유수 영화제와 헐리우드를 중심으로 가상현실영화 제작이 활발히 이루어지고 있으나 아직 국내에서는 가상현실영화 관련 연구가 매우 미흡한 실정이다. 이에 본 연구는 가상현실 영화를 전통영화의 리얼리즘과 포스트모더니즘 관점에서 영화의 프레임(미장센), 쇼트(몽타주) 그리고 시점, 그리고 상호작용성의 네 가지 측면에서 분석하였다. 또한 가상현실 영화 사례들을 통하여 리얼리즘과 포스트모더니즘적 특성 사이의 가상현실영화의 미학적 특징을 도출하였다. 이는 가상현실영화만이 가진 관객의 상호작용성의 특징과 가상현실 기술을 활용한 리얼리즘의 실현, 즉 디지털 리얼리즘이라고 볼 수 있다. 마지막으로 HMD 기반의 1인칭 가상현실 애니메이션 제작사례 'FLY'를 중심으로 가상현실영화의 디지털 리얼리즘적 특성을 논의 하였다.

• 한국표면공학회지
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• 제27권4호
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.419-422
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• 1999

We prepared CoCr thin film for perpendicular magnetic recording media by facing targets sputtering system(FTS system) which can deposit a high quality thin films in plasma-free state and wide range of working pressure. In this study, we investigated that the effect of sputtering condition , that Argon gas pressure and substrate temperature, on magnetic and crystallographic characteristic of CoCr thin film as well as the variation perpendicular coercivity in changing of film's thickness. Crystallographic and magnetic characteristic of prepared thin films were evaluated by x-ray fractometry(XRD), vibrating sample magnetometer(VSM) and kerr hysteresis loop measurement.