• Title/Summary/Keyword: Characteristic Pressure

Search Result 1,810, Processing Time 0.035 seconds

Analysis of Arterial Stiffness Variation by Photoplethysmographic DC Component (광용적맥파 비맥동성분에 의한 혈관경직도 변화 분석)

  • Lee, Chung-Keun;Shin, Hang-Sik;Kong, In-Deok;Lee, Myoun-Ho
    • Journal of Biomedical Engineering Research
    • /
    • v.32 no.2
    • /
    • pp.109-117
    • /
    • 2011
  • Assuming that photons absorbed by a vessel do not have acute variations, DC component reflect the basal blood volume (or diameter) before blood pulsation. Vascular stiffness and reflection is influenced by changes in basal blood volume (or diameter). This paper describes analysis of the characteristic variations of vascular stiffness, according to relative variations in DC components of the PPG signal (25-75%). For quantitative analysis, we have used parameters that were proposed previously, reflection and stiffness index, and the second derivative of PPG waveform, b/a and d/a. Significantly, the vascular stiffness and reflections were increased according to increase in DC component of the PPG signal for more than about 3% of baseline values. The systolic blood pressure were increased from $113.1{\times}13.18$ to $116.2{\times}13.319$ mmHg, about 2.76% (r = 0.991, P < 0.001) and the AC component of the PPG signal were decreased from $2.073{\times}2.287$ to $1.973{\times}2.2038$ arbitrary unit, about 5.09% (r = -0.993, P < 0.001). It is separated by DC median and correlation analysis was performed for analyzing vascular characteristics according to instantaneous DC variations. There are significant differences between two correlation coefficients in separated data.

Optical Characteristic Analysis of Electrodeless Lamp due to the Density Difference of Mercury (수은의 밀도차에 의한 무전극 램프의 광특성 분석)

  • Lee, Kye-Seung;Lee, Jae-Min
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
    • /
    • v.10 no.6
    • /
    • pp.477-486
    • /
    • 2017
  • For the analysis of the optical characteristics of electrodeless lamps, all the lamp surface temperatures have been treated the same. However, the interpretation of optical properties in this way has not been sufficient in terms of accuracy. In this paper, to overcome this problem, we divided the inside of the bulb into two parts, hot spot and cold spot, and analyzed the density difference of mercury by different temperatures. Here, it is assumed that the distribution of temperature and density is linear. The effect of optical characteristics through redistribution of hot spot and cold spot density was analyzed. It was also confirmed that the ratio of the density of the redistributed discharge gas has a great influence on the saturation of the optical characteristics. Therefore, it is proved that the design method through the domestic setting is very useful in the actual design, and the method for shortening the time for stabilizing the optical characteristics is obtained.

A Study of Ozone Generation Characteristic using Ceramic Catalyst Tube of Ti-Si-Al (Ti-Si-Al형 세라믹 촉매 방전관의 오존 발생 특성 연구)

  • 조국희;김영배;이동훈
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.16 no.6
    • /
    • pp.130-136
    • /
    • 2002
  • A novel ozonizer has been developed using a high frequency surface discharge and a high purity Ti-Si-Al ceramic catalyst as its dielectric component. A cylindrical thin compound ceramic catalyst in reactor is adhered to inside of the film-like outside electrode. And, when experiment condition are oxygen gas temperature of 20 [$^{\circ}C$], inner reactor pressure of 1.6 atm 600[Hz] and flow late of 2[l/min]. the ozonizer can easily produce ozone concentration(50~60[g/㎥]for oxygen) and power efficiency(180[g/kWh]for oxygen) without using a special enrichment means. At 2[l/min], 20[$^{\circ}C$], 1.6[atm], 600[Hz]and 40[W], the result of simulation to gas temperature of reactor using general code Phoenics, the maximum temperature of reactor was 132[$^{\circ}C$]in reactor. Ant the result electric field simulation of Ti-Si-Al type reactor using general code Flux 2D, maximum electric field was 0.131E.08[V/m].

Development of a PTC Heater for Supplementary Heating in a Diesel Vehicle (디젤 차량의 보조 난방을 위한 PTC 히터 개발)

  • Shin, Yoon Hyuk;Kim, Sung Chul
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.15 no.2
    • /
    • pp.666-671
    • /
    • 2014
  • Using positive temperature coefficient (PTC) heater as supplementary heating for diesel engine vehicles with low heat source is a good method to enhance the heating performance during cold start. In this study, the PTC elements were made by using screen printing process for forming ohmic contact layer, and prototype of PTC heater was designed and made for a diesel engine vehicle. In process of designing the PTC heater, the thermal flow analysis of PTC element modules was conducted for verifying the effect of the shapes of contact surface between each of the components (cooling fin, insulator, ceramic element). We also investigated the performance characteristic (heating capacity, energy efficiency, pressure drop) of the PTC heater through the experiments. Therefore, the experimental results indicated that prototype of PTC heater had satisfactory performance. This study will be basis for improving the manufacturing process and increasing the performance of the PTC element and heater.

Analysis of PIG Dynamics through Curved Section in Natural Gas Pipeline (천연가스 배관 곡관부에서의 피그 동적 거동 해석)

  • Kim D. K.;Nguyen T. T.;Yoo H. R.;Rho Y. W.;Kho Y.T.;Kim S. B.
    • Journal of the Korean Institute of Gas
    • /
    • v.6 no.1 s.17
    • /
    • pp.1-9
    • /
    • 2002
  • This paper presents simple models for flow and the PIG dynamics when it passes through a $90^{\circ}$ curved section of pipeline. The simulation has been done with two different operational boundary conditions. The solution fur non-linear hyperbolic partial equations for flow is given by using MOC. The Runge-Kuta method is used to solve the initial condition equation fur flow and the PIG dynamics equation. The simulation results show that the proposed model and solution can be used fur estimating the PIG dynamics when the pig runs in the pipeline including curved section. In this paper, dynamic modeling and its analysis for the PIG flow through $90^{\circ}$ curved pipe with compressible and unsteady flow are studied. The PIG dynamics model is derived by using Lagrange equation under assumption that it passes through 3 different sections in the curved pipeline such that it moves into, inside and out of the curved section. The downstream and up stream flow dynamics including the curved sections are solved using MOC. The effectiveness of the derived mathematical models is estimated by simulation results fur a low pressure natural gas pipeline including downward and upward curved sections. The simulation results show that the proposed model and solution can be used for estimating the PIG dynamics when we pig the pipeline including curved section.

  • PDF

DC Characteristic of Silicon-on-Insulator n-MOSFET with SiGe/Si Heterostructure Channel (SiGe/Si 이종접합구조의 채널을 이용한 SOI n-MOSFET의 DC 특성)

  • Choi, A-Ram;Choi, Sang-Sik;Yang, Hyun-Duk;Kim, Sang-Hoon;Lee, Sang-Heung;Shim, Kyu-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.06a
    • /
    • pp.99-100
    • /
    • 2006
  • Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.

  • PDF

Preparation and Characterization of Pamidronate-loaded PLGA Wafer for the Treatment of Bone Resorption (골 재흡수 치료를 위한 파미드로네이트를 함유한 이식형 생분해성 PLGA 웨이퍼의 제조와 특성결정)

  • 유제영;김상욱;강길선;성하수;정제교
    • Polymer(Korea)
    • /
    • v.26 no.5
    • /
    • pp.680-690
    • /
    • 2002
  • Implantable biodegradable wafers were prepared with pamidronate -loaded poly (L-lactide-co-glycolide) (PLGA, 75 : 25 mole ratio by lactide to glycolide, molecular weight : 20000 and 90000 g/mole) by direct compression method for the sustained release of pamidronate to investigate the possibility for the treatment of bone resorption. Pamidronate-loaded PLGA powders were prepared by means of physical mixing and spray drying with the control of formulation factors and characterized by scanning electron microscope and X-ray diffractometer. The pamidronate-loaded PLGA powders fabricated into wafers by direct compression under the constant pressure and time at room temperature. These wafers were also observed for their structural characteristic, release pattern, and degradation pattern. The release rate of pamidronate increased with increasing their initial loading ratio as well as increasing wafer thickness. The molecular weight of PLGA affects the release pattern : the higher molecular weight of PLGA, the faster release rate. It can be explained that the higher viscosity of high molecular PLGA solution at same concentration tends to aggregate PLGA and pamidronate resulting in unstable pharmaceutical dosage form. This system had advantages in terms of simplicity in design and obviousness of drug release rate and nay be useful as an implantable dosage form for the treatment of aural cholesteatoma.

Laser absorption spectroscopy of ternary gas mixture of He-Ne-Xe in External Electrode Fluorescent Lamp (EEFL) (레이저 흡수 분광법을 이용한 He-Ne-Xe 상종가스의 외부전곡 램프의 $1s_4$ 공명준위와 $1s_5$ 준안정준위의 제논 원자 밀도에 대한 연구)

  • Jeong, S.H.;Oh, P.Y.;Lee, J.H.;Cho, G.S.;Choi, E.H.
    • Journal of the Korean Vacuum Society
    • /
    • v.15 no.6
    • /
    • pp.576-580
    • /
    • 2006
  • Mercury-free lamp, external electrode fluorescent lamp (EEFL) which includes the xenon gas, is now going on the research for the replacement of mercury lamp. The densities of excited xenon atom in the $1s_4$ resonance state and the $1s_5$ metastable state are investigated in the EEFL by a laser absorption spectroscopy under various gas pressures. We have measured the absorption signals for both $1s_4$ resonance and the $1s_5$ metastable state in the EEFL by varying the discharge currents for a given pressure. This basic absorption characteristic is very important for improvement of the VUV luminous efficiency of the EEFL as well as plasma display panel.

Numerical Analysis of Ultrasonic Beam Profile Due to the Change of the Number of Piezoelectric Elements for Phased Array Transducer (Phased Array트랜스듀서에 있어서 구성 압전소자수의 변화에 따른 초음파 빔 전파 특성의 수치 해석)

  • Choi, Sang-Woo;Lee, Joon-Hyun
    • Journal of the Korean Society for Nondestructive Testing
    • /
    • v.19 no.3
    • /
    • pp.207-216
    • /
    • 1999
  • A phased array is a multi-element piezoelectric device whose elements are individually excited by electric pulses at programmed delay time. One of the advantages of using phased array in nondestructive evaluation (NDE) application over conventional ultrasonic transducers is their great maneuverability of ultrasonic beam. There are some parameters such as the number and the size of the piezoelectric elements and the inter-element spacing of the elements to design phased array transducer. In this study, the characteristic of ultrasonic beam for phased array transducer due to the variation of the number of elements has been simulated for ultrasonic SH-wave on the basis of Huygen's principle. Ultrasonic beam directivity and focusing due to the change of time delay of each element were discussed due to the change of the number of piezoelectric elements. It was found that ultrasonic beam was much more spreaded and hence its sound pressure was decreased as steering angle of ultrasonic beam was increased. In addition, the ability of ultrasonic bean focusing decreased gradually with the increase of focal length at the same piezoelectric elements. However, the ability of beam focusing was improved as the number of consisting elements was increased.

  • PDF

Manufacture and characteristic evaluation of Amorphous Indium-Gallium-Zinc-Oxide (IGZO) Thin Film Transistors

  • Seong, Sang-Yun;Han, Eon-Bin;Kim, Se-Yun;Jo, Gwang-Min;Kim, Jeong-Ju;Lee, Jun-Hyeong;Heo, Yeong-U
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.08a
    • /
    • pp.166-166
    • /
    • 2010
  • Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

  • PDF