• JSTS:Journal of Semiconductor Technology and Science
• /
• 제10권3호
• /
• pp.225-231
• /
• 2010

In this paper, we investigate the channel thermal noise in nanoscale MOSFETs. Simple analytical model of thermal noise factor in nanoscale MOSFETs is presented and it is verified with accurately measured noise data. The noise factor is expressed in terms of the channel conductance and the electric field in the gradual channel region. The proposed noise model can predict the channel thermal noise behavior in all operating bias regions from the long-channel to nanoscale MOSFETs. From the measurement results, we observed that the thermal noise model for the long-channel MOSFETs does not always underestimate the short-channel thermal noise.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제13권3호
• /
• pp.213-223
• /
• 2013

A unified channel thermal noise model valid in all operation regions is presented for short channel MOS transistors. It is based on smooth interpolation between weak and strong inversion models and consistent physical model including velocity saturation, channel length modulation, and carrier heating. From testing for noise benchmark and comparing with published noise data, it is shown that the proposed noise model could be useful in simulating the MOSFET channel thermal noise in all operation regions.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제6권3호
• /
• pp.206-209
• /
• 2006

This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.

• 전자공학회논문지A
• /
• 제31A권10호
• /
• pp.114-118
• /
• 1994

To resolve thd discrepancy between the existing channel thermal noise theory of MOSFETs and a new theory called the stady-state Nyquist theorem, we have measured the channel thermal noise of specially designed MOSFETs with both uniform and nonuniform channels. the experimental results clearly show that the correct theory of the channel thermal nois in MOSFETs should be the steady-state Nyquist theorem.

• 전기의세계
• /
• 제25권6호
• /
• pp.69-73
• /
• 1976

Thd idle channel noise on FDM-microwave communication system is increasing because of the up-grade to wide-band loading. The thermal noise on receiver of microwave radio is measured according to their channel slot frequencies, low, meddle and high slots on the base band, from 60 channels to 960 channels. And suggested a consideration for system engineering, to reduce the thermal noise from radio microwave receivers, so as to improve signal to noise ratio.

• 전자공학회논문지A
• /
• 제33A권6호
• /
• pp.42-51
• /
• 1996

Performance analysis of FH/CPFSK system with liiter-discriminator detection and integrate-dump post-detection filtering under the thermal noise and the partial-band noise jamming on the rayleigh fading channel have been analyzed. The thermal noise and partial-band noise jamming, rayleigh fading, intersymbol interference for all eight of the possible adjacent bit data patterns, and FM noise click for evaluating systems have been considered. Also optimum parameters to improve performance of FH/CPFSK system have been obtained and validities for AMPS and CDMA system of land-mobile-communication system through computer simulation have been proved.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제7권2호
• /
• pp.88-93
• /
• 2007

In this paper, a simple and improved noise parameter model of RF MOSFETs is developed and verified. Based on the analytical model of channel thermal noise, closed form expressions for four noise parameters are developed from proposed equivalent small signal circuit. The modeling results show a excellent agreement with the measured data of $0.13{\mu}m$ CMOS devices.

• 한국정보통신학회논문지
• /
• 제13권12호
• /
• pp.2655-2661
• /
• 2009

단채널 MOSFET의 열잡음 모델링을 위한 정밀한 잡음 파라메터를 유도하고 추출했다. MOSFET의 잡음 파라메터를 계산하기 위한 Fukui모델을 단채널에서의 기생성분의 영향을 고려하여 수정하였고, 기존의 모델식과 비교하였다. 또한 소자 고유의 잡음원을 얻기 위해서 서브마이크론 MOSFET의 잡음 파라메터(최소잡음지수 $F_{min}$, 등가잡음 저항 $R_n$, 최적 소스어드미턴스 $Y_{opt}=G_{opt}+B_{opt}$)를 추출하는 방법을 제시하였다. 이러한 추출방법을 통하여 프로브패드의 영향과 외부기생소자 영향을 제거한 MOSFET 고유의 잡음 파라메터가 RF잡음측정으로부터 직접 얻어지게 된다.

• Progress in Superconductivity
• /
• 제11권2호
• /
• pp.152-157
• /
• 2010

We have fabricated the low noise liquid helium(LHe) dewar with a different shape of thermal shield to apply the 64-channel SQUID(Superconducting Quantum Interference Device) gradiometer. The first shape of thermal shield was made of an aluminum plate with a wide width of 100 mm slit and the other shape was modified with a narrow width of 20 mm slit. The two types of dewars were estimated by comparing the thermal noise and the signal-to-noise ratio(SNR) of magnetocardiography(MCG) using the $1^{st}$ order SQUID gradiometer system cooled each dewar. The white noise was different as a point of the dewar. The noise was increased as close as the edge of dewar, and also increased at the thermal shield with the more wide width slit. The white noise of the dewar with thermal shield of 100 mm slit was 6.5 fT/$Hz^{1/2}$ at the center of dewar and 25 fT/$Hz^{1/2}$ at the edge, and the white noise of the other one was 3.5 - 7 fT/$Hz^{1/2}$. We measured the MCG using 64-channel SQUID gradiometer cooled at each LHe dewar and compared the SNR of MCG signal. The SNR was improved of 10 times at the LHe dewar with a modified thermal shield.

• 한국음향학회지
• /
• 제12권1호
• /
• pp.47-54
• /
• 1993

Performance analysis is very important to transmit the high quality information and to construct the optimal system for the minimze the noise from the channel of spread spectrum system. In this paper the error rate performance is analyzed with computer simulation in noncoherent frequency hopping M-qry frequency shift keying(FH/MFSk) systems with regard to thermal noise under the partial band jamming environments. AS a result, in case the thermal noise is disregarded, bit error probability of system in jamming fraction ρ and Eb/Nj(bit energy to jamming power density) is reduced with the increase of K and in worst case 32FSK system is better than 2FSK system by 3.23dB with the variatio of Eb/Nj. In case thermal noise is considered, bit error probability of system by 3.23dB with the variation of Eb/Nj. In case thermal noise is considered, bit error probability of system are reduced with the increase of K and Eb/No(bit energy to thermal noise density). Bit error probability in connection with worst case ρ is not largely influenced form over the 14dB to K=1 and 8dB to K=5 accordingly thermal noise disregarding. These results may be useful for avoiding the common vulnerabilities when the spread spectrum system is designed.