• Journal of the Korean Society of Environmental Restoration Technology
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• v.13 no.2
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• pp.95-104
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• 2010

The purpose of this study is to analyze the correlation between physical stream characteristics and bed materials in natural rivers. Accordingly, four natural rivers were selected reference streams, they were Nam river, Sumjin River, Naesung River and Han River. Grain size distributions of bed materials were gravels, cobbles and boulders in Han river and Nam river, were sand, gravels, cobbles and boulders in Sumjin river and were sand in Naesung river. Four reference streams were divided into each two reference reaches (straight and bend) by plan and profile characteristics of naturally meandering stream. Therefore various reference reaches were chosen in the aspect of physical stream characteristics and grain size distributions. The results investigated and analyzed are as follows. The streams that grain sizes distributions of river bed materials were coarse were stable because they had variety of bed slope without sediment deposition, and then the riffles frequency and the physical characteristics were various. Also, velocitydepth regime were various in four kinds, and the response parts for water level change were small, so that channel flow status were stable and excellent condition. On the other hand, sand river that grain sizes distributions of river bed materials were fine had not the variety of parameters as velocity-depth regimes, sediment deposition, channel flow status and riffles frequency, so that the physical stream characteristics were not various.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.166-171
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• 2016

Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method.

• ETRI Journal
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• v.31 no.2
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• pp.228-230
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• 2009

InP-based planar waveguide 48-channel concave grating demultiplexers with a channel spacing of 0.8 nm (100 GHz) are described and demonstrated. Polarization insensitivity and flattened spectral response are successfully achieved by the introduction of a polarization compensator and a two-focus grating, respectively. The fabricated device shows a polarization-dependent wavelength shift of less than 20 pm and a -3 dB spectral width of about 0.55 nm (68.75 GHz) over all channels.

• Journal of the Korean Geographical Society
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• v.33 no.1
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• pp.1-16
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• 1998

This study surveyed intensively the relationships between grain size of coarse bed materials and some principal factors in channel system, drainage area and channel slope, in Rocky Mountains. The result of this research shows that there are statistically significant relationships between these factors. Generally, the grain size and the channel slope exponentially decreased in the study area with the increase in drainage area. However, there are great differences in grain size and channel slope between upstream and downstream channels. The boundary lines are commonly located at near the mouth of canyon. From these results, it can be concluded that the bed material characteristics and the channel slope are strongly influenced by the geological and geomorphological background of the drainage basin in this study area.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.270-274
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• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of Korea Water Resources Association
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• v.37 no.5
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• pp.387-395
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• 2004

A computer model was proposed to simulate channel changes and bed material sorting of the meandering channels with different grain size in time and space simultaneously. The bed at the outside of the meandering channel with mixed sediments was scoured deeply and composed of coarser materials, and at the inside was aggradated and composed of finer materials. The sorting process started at the upstream inflection point and was finished at the downstream inflection point. At the natural with complicated boundaries and non-uniform grain sizes, the bed near the outside at the bend and narrow width was scoured deeper with coarse materials than in the channel with uniform grain sizes. The point bars showed lip at the inside near the bend and the bed materials were finer The bed at the outside near the bend and in the narrow width was scoured deeply with the coarser materials.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.30 no.4
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• pp.175-185
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• 2018

This research investigates the internal flow and heat transfer in a plate heat exchanger with chevron shape by utilizing the computational fluid dynamics (CFD) software. The basic unit of the plate heat exchanger is generally composed of a hot channel, an intermediate chevron plate, and a cold channel. Several studies have reported experimental and numerical simulation of heat transfer and pressure drop. This study focused on the detailed numerical simulation of flow and heat transfer in the complicated chevron shape channel. The long chevron plate was designed to include 16 chevron patterns. For proper mesh resolution, the number of cells was determined after the grid sensitivity test. The working fluid is water, and its properties are defined as a function of temperature. The Reynolds number ranges from 900 to 9,000 in the simulation. A realizable $k-{\varepsilon}$ model and non-equilibrium wall function are properly considered for the turbulent flow. The friction factors and heat transfer coefficient are validated by comparing them with existing empirical correlations, and other patterned flow phenomena are also investigated.

• Journal of the Korean Society of Industry Convergence
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• v.20 no.3
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• pp.221-232
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• 2017

In this study, bipolar plates in fuel cells are formed using rubber forming process. The effects of important parameters in rubber forming such as hardness and thickness of rubber pad, speed and pressure of punch that compress blank, and physical property of materials on the channel depth were analyzed. In the soft material sheet Al1050, deeper channels are formed than in materials STS304 and Ti-G5. Formed channel depth was increased when hardness of rubber pad was lower, thickness of rubber pad was high, and speed and pressure of punch were high. It was found the deepest channel was achieved when forming process condition was set with punch speed and pressure at 30 mm/s and 55 MPa, respectively using rubber pad having hardness Shore A 20 and thickness 60 mm. The channel depths of bipolar plates formed with Al1050, STS304 and Ti-G5 under the above process condition were 0.453, 0.307, and 0.270 mm, respectively. There were no defects such as wrinkle, distortion, and crack found from formed bipolar plates.