• E2M - 전기 전자와 첨단 소재
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• 제6권4호
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• pp.330-338
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• 1993

Channel의 폭과 길이가 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m인 비휘발성 SNOSFET EEPROM 기억소자를 CMOS 1 Mbit 설계규칙에 의하여 제작하고 체널크기에 따른 $I_{D}$- $V_{G}$특성 및 스위칭 특성을 조사하여 비교하였다. 게아트에 전압을 인가하여 질화막에 전하를 주입시키거나 소거시킨 후 특성을 측정한 결과, 드레인전류가 적게 흐르는 저전도상태와 전류가 많이 흐르는 고전도상태로 되는 것을 확인하였다. 15 x 15.mu.m의 소자는 전형적인 long channel특성을 나타냈으며 15 x 1.5.mu.m, 1.9 x 1.7.mu.m는 short channel특성을 보였다. $I_{D}$- $V_{G}$ 특성에서 소자들의 임계 문턱전압은 저전도상태에서 $V_{W}$=+34V, $t_{W}$=50sec의 전압에서 나타났으며 메모리 윈도우 폭은 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m의 소자에서 각각 6.4V, 7.4V, 3.5V였다. 스위칭 특성조사에서 소자들은 모두 논리스윙에 필요한 3.5V 메모리 윈도우를 얻을 수 있었으며 논리회로설계에 적절한 정논리 전도특성을 가졌다.특성을 가졌다.다.다.

• 한국전기전자재료학회논문지
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• 제35권6호
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• pp.576-580
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• 2022

Semiconductor devices have evolved from 2D planar FETs to 3D bulk FinFETs, with aggressive device scaling. Bulk FinFETs make it possible to suppress short-channel effects. In addition, the use of low-k dielectric materials as a vacuum gate spacer have been suggested to improve the AC characteristics of the bulk FinFET. However, although the vacuum gate spacer is effective, correlation between the vacuum gate spacer and the short-channel-effects have not yet been compared or discussed. Using a 3D TCAD simulator, this paper demonstrates how to optimize bulk FinFETs including a vacuum gate spacer and to suppress short-channel effects.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 춘계종합학술대회 A
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• pp.727-729
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• 2008

Organic field-effort transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.279-280
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• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.930-933
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.410-411
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2002년도 추계학술발표대회 논문집
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• pp.280-283
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• 2002

In the manufacturing of large scale composite structures, the cost-effective processing and the enhancement of structural performance are critical. One of the most effective ways for this purpose is to use stitched multiaxial warp knitted (MWK) perform in the resin transfer molding process. This study reports the effect of stitching on the mechanical properties of MWK composites, and the feasibility processing of the thick U-beam structure utilizing the stitched preforms. Permeability of the preform, viscosity and cure property of the epoxy resin have been measured. The results of resin flow analysis has been used in determining the gate/vent locations of the RTM mold. Cross-sectional observation of the channel beam prototype demonstrated that the resin impregnation was almost complete, except for some surrounding area of stitched yarns.

• 한국공작기계학회논문집
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• 제17권1호
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• pp.59-64
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• 2008

Micro machining can manufacture complex shapes with high accuracy. Especially, this enables wide application of micro technology in various fields. For example, micro channels allow fluid transfer, which is a widely used technology. Therefore, liquidity research of flow in micro channels and micro channel manufacturing with use of various materials and cutting conditions has very important meaning. In this study, to find out correlation between fluid velocity in micro channels and surface roughness, we manufactured micro channels using micro end-mill and dropped ethanol into micro channels. We compared several surface roughness and fluid velocity in micro channels that were created by various processing conditions. Finally, we found out relationship between fluid velocity and surface roughness in micro channels of different materials.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.619-621
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.506-507
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• 2008

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel device was width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.